新一代无机相变光存储材料研究进展

光存储技术正在向着大容量、高数据传输率的方向发展。新一代的光存储将从目前广泛使用的红光波段向蓝光波段发展。综述了可用于新一代高密度光存储无机相变材料的研究现状和最新进展，并对今后的发展前景进行了简要的展望。

Observation of ultrafast carrier dynamics in amorphous Ge2Sb2Te5 films induced by femtosecond laser pulses

The femtosecond pump-probe technique was used to study the carrier dynamics of amorphous Ge2Sb2Te5 films. With carrier density at around 10(20)-10(21) cm(-3), carriers were excited within 1 ps and recovered to the initial state for less than 3 ns. On the picosecond time scale, the carrier relaxation consists of two components: a fast process within 5 ps and a slow process after 5 ps. The relaxation time of the fast component is a function of carrier density, which increases from 1.9 to 4.3 ps for the carrier density changing from 9.7x10(20) cm(-3) to 3.1x10(21) cm(-3). A possible interpretation of the relaxation processes is elucidated. In the first 5 ps the relaxation process is dominated by an intraband carrier relaxation and the carrier trapping. It is followed by a recombination process of trapped carriers at later delay time. (c) 2007 American Institute of Physics.

Si underlayer induced nano-ablation in AgInSbTe thin films

AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

飞秒激光辐照ZnO晶体

利用飞秒激光对ZnO晶体进行辐照，对辐照前后的晶体样品进行发光光谱及拉曼光谱检测。辐照后发光光谱的某些发光峰强度有明显增强，但未产生新的发光峰，表明没有新的缺陷结构产生，但晶体内锌空位、间隙位锌、间隙位缺陷浓度增加。拉曼光谱结果表明，辐照后ZnO晶体未产生相变，但随着辐照激光功率的增大，拉曼峰327 cm-1，437 cm-1强度明显减弱，表明在飞秒激光辐照作用下氧化锌的结晶程度下降。但574 cm-1峰值却随着辐照功率的增大而变大，分析表明该拉曼峰很可能是由于晶体内间隙位缺陷所致。同时实验过程中观察到飞

Precise determination of anomalous scattering factors of Ge by using X-ray resonant scattering

Variations of peak position of the rocking curve in the Bragg case are measured from a Ge thin crystal near the K-absorption edge. The variations are caused by a phase change of the real part of the atomic scattering factor. Based on the measurement, the values of the real part are determined with an accuracy of better than 1%. The values are the most reliable ones among those reported values so far as they are directly determined from the normal atomic scattering factors.

Thermodynamic damage mechanism of transparent films caused by a low-power laser

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

光学薄膜中界面层和表面吸附层对相位延迟的影响

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移．根据空气与膜层、膜层之间的实际情况，建立了界面层和表面吸附层模型，并运用它分析相位延迟产生误差的原因．通过优化设计，入射角为54°，在1285～1345nm之间p，s波获得了270±1°的相移，同时也使反射率在99．5％以上．用离子束溅射技术制备相位延迟膜，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性，在相应波段获得了262．4±1．8°的相移，同时也使反射率在99．6％以上．误差的主要来源是离子源工作特性会产生不均匀的过渡层和最

热学微流控系统中瞬态相变传热研究

微尺度相变传热广泛存在于微反应器、微型燃料电池、微蒸发器、微冷凝器、微热管、微汽泡执行器等微流控器件中，研究微流控系统中的相变问题对于微流控器件的设计和运行具有重要的科学意义。本文针对三类典型的微尺度相变问题，即微尺度流动沸腾、微尺度流动凝结以及微加热器上的汽泡动力学进行了深入细致的研究，实验研究中所采用的实验件均为标准MEMS微加工工艺制作，克服了常规机械加工所造成的表面粗糙度的影响。 考虑到微流控系统中大量应用交叉型、弯曲型等复杂结构的微通道，在微尺度流动沸腾研究中，设计了一种具有交错微通道结构的微流控芯片，并以丙酮为工质，对该芯片内的流动沸腾进行了研究。发现了周期为毫秒量级微时间尺度的流型结构，整个周期包括单相液体充液、两相分层流以及部分蒸干的液膜流三个阶段；在单个微通道区域，由于蒸发动量力的作用，液膜沿流动方向呈非均匀分布，蒸干首先发生在上游；由于液相弗劳德数较小，导致微通道中依然存在分层流流型。由于毕渥数较小，芯片背面温度几乎与芯片内壁面温度保持同步变化。虽然红外热像仪的响应频率较低，但仍然可以鉴别出由于流型周期性转换导致的壁面温度脉动。 在微尺度流动凝结换热研究中，为便于获取凝结过程的动态流动特性，设计了一种低高宽比的单微通道，并以水为工质，对该微通道中的流动凝结换热进行了研究。实验中采取了空气自然对流冷却和 水强制对流冷却两种冷却强度。研究发现，该微通道中的凝结换热呈周期性，其周期在毫秒量级。在通道上游入口处，存在一个呈准静止状态的长汽弹，汽弹前端周期性脱离汽泡。增加冷却强度会使汽泡的脱离频率增大，脱离直径减小；长汽弹前端周期性脱离汽泡是由于汽液界面具有较大的韦伯数。汽泡在该微通道内的运动过程中直径基本不变是由于汽泡在通道内的滞留时间远小于汽泡完全冷凝所需的总时间。 为澄清并联通道的多通道效应对微尺度凝结换热的影响，作者设计了由三个矩形通道组成的并联微通道冷凝器。研究发现，通道中的流型结构与单通道凝结过程类似，均为上游呈准静止状态的长汽弹和下游周期性的汽泡脱离。在中间通道和侧通道中，总共发现了三种不同的汽泡脱离模式，即单汽丝断裂模式、双汽丝同步断裂模式以及双汽丝非同步断裂模式。多通道效应主要表现在由于硅基固体导热的影响，三个通道中具有不同的温度分布，中间通道的温度关于其中心线成对称分布，而两侧通道中的高温区域均靠向中间通道。虽然硅具有良好的导热性，整个硅基上的温差很小，但在微尺度下，小温差依然可以导致较大的温度梯度，造成中间通道的双汽丝关于其中心线成对称分布，并且总是发生同步断裂；侧通道中的双汽丝偏向中间通道，并且在靠近中间通道的一侧汽丝总是首先发生断裂。由于温度梯度引起的Maragnoni对流效应，侧通道中的汽泡脱离后便靠向高温侧。 在微汽泡动力学研究中，设计了一种尺寸为 的Pt薄膜微加热器，研究了脉冲控制参数对微加热器上汽泡动力学特性的影响。研究发现在该微加热器上发生汽泡核化时，核化温度均达到液体的过热极限，因此为均质核化过程。在不同的脉冲控制参数下，存在三类不同的汽泡动力学特性，即（1）汽泡爆炸性生长和冷凝以及汽泡二次生长；（2）汽泡爆炸性生长继而分裂、吸引并聚合；（3）汽泡振荡生长而后持续生长并最终达到稳定状态。在第（1）类中，汽泡二次生长是由于脉冲加热过程中在玻璃基片上储存了热量；在第（2）类中，汽泡冷凝过程中的Marangoni效应导致分裂后的汽泡互相吸引并最终聚合。在第（3）类中，汽泡尺寸最终达到稳定是由于汽泡内蒸汽的发生量与汽液界面上蒸汽的凝结量相等。 本文的研究将为微反应器、微型燃料电池、微换热器、微汽泡执行器等相变微流控系统的设计和运行提供科学指导。

Multi-channel effect of condensation flow in a micro triple-channel condenser

Multi-channel effect is important to understand transport phenomenon in phase change systems with parallel channels. In this paper, visualization studies were performed to study the multi-channel effect in a silicon triple-channel condenser with an aspect ratio of 0.04. Saturated water vapor was pumped into the microcondenser, which was horizontally positioned. The condenser was cooled by the air natural convention heat transfer in the air environment. Flow patterns are either the annular flow at high inlet vapor pressures, or a quasi-stable elongated bubble at the microchannel upstream followed by a detaching or detached miniature bubble at smaller inlet vapor pressures. The downstream miniature bubble was detached from the elongated bubble tip induced by the maximum Weber number there. It is observed that either a single vapor thread or dual vapor threads are at the front of the elongated bubble. A miniature bubble is fully formed by breaking up the vapor thread or threads. The transient vapor thread formation and breakup process is exactly symmetry against the centerline of the center channel. In side channels, the Marangoni effect induced by the small temperature variation over the channel width direction causes the vapor thread formation and breakup process deviating from the side channel centerline and approaching the center channel. The Marangoni effect further forces the detached bubble to rotate and approach the center channel, because the center channel always has higher temperatures, indicating the multi-channel effect. 

蒸发相变与界面流动耦合机理研究

本文提出了一种新模型来研究液层在其纯蒸气中的蒸发热动力学特征,尤其是当蒸发界面张力驱动流占主导作用时(如微重力环境中)液层热毛细对流和界面蒸发始终耦合在一起. 气一液界面的传热传质规律有待深入研究. 本文数值模拟研究了蒸发相变界面热毛细对流与蒸发效应的耦合机质,得到了不同蒸发模式和不同强度热毛细对流蒸发液层的温度分布、蒸发速率以及对流流场分布的数值解. 论述了蒸发Biot数和Marangoni数对界面传热传质的影响,发现并解释了蒸发和热毛细耦合的三种模式

快重离子辐照引起Ni/SiO2界面原子混合及相变研究

Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2,respectively.These samples were analyzed using Rutherford Backscattering Spectrometry(RBS) and X-ray diffraction spectroscopy(XRD),from which the intermixing and phase change were investigated.The obtained results show that both Xe-and Pb-ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2.Furthermore,1.0×1012 Xe/cm2 irradiat...中文摘要：在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.