366 resultados para Semiconductor Nanocrystals


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We propose a theoretical model for analyzing the dynamics of a periodically driven semiconductor laser subject to optical feedback from a microcantilever. We numerically investigate the temporal evolution of the light intensity of the semiconductor laser, and we show the interspikes of the light intensity. These interspikes of light intensity are also demonstrated in our experiment. The validity of the theoretical model is verified. The observed phenomenon has a potential application for resonant sensing. (C) 2008 Optical Society of America.

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Output power fluctuations in a grating external cavity diode laser with Littman configuration are described, showing peculiar chaotic behaviors of self-pulsation at the L-I curve kink points. Different spectral characteristics with multiple peaks are observed at upper and lower state of the self-pulsation. It is found also that P-N junction voltage jumps in a same pace with the pulsation. The observed phenomena reflect competition between different longitudinal modes, and transient variation of transverse modes in addition. These experimental results may contain information about the mechanisms of the chaotic instability in strong filtered feedback semiconductor lasers. (C) 2008 Optical Society of America

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Er3+:Yb3+ codoped tellurite-fluorophosphate (TFP) glass ceramic exhibits much stronger upconversion luminescence. The intensity of the 540 nm green light and 651 nm red light of the TFP glass ceramic is 120 times and 44 times stronger than that of the fluorophospahte (FP) glass, respectively. XRD analysis shows that the nanocrystal in TFP glass ceramic is SrTe5O11. TFP glass ceramic also displays much higher upconversion fluorescence lifetime and crystallization stability. The narrow and strong peak at 540 nm is very ideal for practical upconversion luminescence realization. This work is a new trial for exploring non-PbF2 involved nanocrystal upconversion glass ceramics.

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Transparent glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals were synthesized and characterized by X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Intense broad-band luminescence centering at 1200 nm was observed when the sample was excited by a diode laser at 980 nm. The room-temperature fluorescent lifetime was 665 mu s, which is longer than the Ni2+-doped ZnAl2O4 and LiGa5O8 glass-ceramics and is also comparable to the Ni2+-doped LiGa5O8 single crystal. The intense infrared luminescence with long fluorescent lifetime may be ascribed to the high crystal field hold by Ni2+ and the moderate lattice phonon energy of beta-Ga2O3. The excellent optical properties of this novel material indicate that it might be a promising candidate for broad-band amplifiers and room-temperature tunable lasers.

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We demonstrate broadband optical amplification at 1.3 mu m in silicate glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals with 980 nm excitation for the first time. The optical gain efficiency is calculated to be about 0.283 cm(-1) when the excitation power is 1.12 W. The optical gain shows similar wavelength dependence to luminescence properties. (C) 2007 Optical Society of America.

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Up-conversion luminescence properties of a Tm3+/Yb3+ codoped oxyfluoride glass-ceramics under 980nm excitation are investigated. Intense blue emission centered at 476nm, corresponding to (1)G(4) -> H-3(6) transitions of Tm3+ was simultaneously observed in the transparent oxyfluoride glass ceramics at room temperature. The intensity of the blue up-conversion luminescence in a 1 mol% YbF3-containing glass-ceramic was found to be about 40 times stronger than that in the precursor oxyfluoride glass. The reason for the intense TM3+ up- conversion luminescence in the oxyfluoride glass-ceramics is discussed. The dependence of up-conversion intensities on excitation power and possible up-conversion mechanism are also evaluated. (c) 2005 Elsevier B.V. All rights reserved.

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The emission intensity of Ni2+ at 1200 nm in transparent ZnO-Al2O3-SiO2 glass ceramics containing ZnAl2O4 nanocrystals is improved approximately 8 times by Cr3+ codoping with 532 nm excitation. This enhanced emission could be attributed to an efficient energy transfer from Cr3+ to Ni2+, which is confirmed by time-resolved emission spectra. The energy transfer efficiency is estimated to be 57% and the energy transfer mechanism is also discussed. (C) 2008 Optical Society of America.

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Spectral properties of Yb3+/Ni2+ codoped transparent silicate glass ceramics containing LiGa5O8 nanocrystals were investigated. The near-infrared emission intensity of Ni2+ was largely increased with Yb3+ codoping due to Yb3+-> Ni2+ energy transfer. The qualitative calculation of the energy transfer constant Cs-a and rate Ps-a showed that the Yb3+-> Ni2+ energy transfer was much greater than in the opposite direction. Yb3+/Ni2+ codoped glass ceramics with 0.75 mol % Yb2O3 exhibited a near-infrared emission with full width at half maximum of 290 nm and fluorescent lifetime of 920 mu s. The glass ceramics are promising for broadband optical amplification.

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We report an alternative medium of transparent upconverting colloid containing lanthanide ion doped NaYF4 nanocrystals for three-dimensional (3D) volumetric display. The colloids exhibit tunable upconversion luminescence with a wide spectrum of colors by adjusting the doping concentrations of the nanocrystals and the compositions of the colloids. Our preliminary experimental result indicates that an upconverting colloid-based 3D volumetric display using a convergent, near infrared laser beam to induce a localized luminescent spot near the focus is technically feasible. Therefore arbitrary 3D objects can be created inside the upconverting colloid by use of computer controlled 3D scanning systems. (C) 2008 Optical Society of America

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4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics.