149 resultados para Scanning Electron-microscope


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NaYF4: 0.02Er center dot xYb-PVP composite nanofibers with the diameter of similar to 400 nm have been prepared by electrospinning. Field emission scanning electron microscope and X-ray diffraction have been utilized to characterize morphology and structure of the as-prepared electrospun nanofibers. Their up-conversion luminescence is investigated under a 980-nm excitation. Green (538 and 520 nm), red (6-55 nm), and blue (405 nm) emissions are observed in the up-conversion luminescence spectra, and the intensity of these three emissions changes differently with the variety of Yb content, which has been interpreted successfully in this letter. The color of NaYF4: 0.02Er center dot xYb-PVP nanolibers under a 980-nm excitation can be changed from green --> white --> yellow gradually via changing the Yb content.

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We report on an optical interference method to fabricate array microstructures on the surface of silicon wafers by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed microstructures with micrometer-order were fabricated. The diffraction characteristics of the fabricated structures were evaluated. The present technique allows one-step realization of functional optoelectronic devices on silicon surface. (C) 2004 Elsevier B.V. All rights reserved.

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Undoped Y2SiO5 single crystal was grown by the Czochralski method. The samples were optically polished after orienting and cutting. The rhombus and quadrangular dislocation etching pits, the low-angle grain boundaries and the inclusions in the samples were observed using optical microscope and scanning electron microscope. The absorption spectra were measured before and after H-2 annealing or air annealing. The absorption edge of Y2SiO5 crystal was determined to be about 202 nm. The absorption coefficient of Y2SiO5 crystal decreased after H-2 annealing and obviously increased after air annealing. (C) 2005 Elsevier B.V. All rights reserved.

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采用提拉法(CZ)生长了质量优异的Tm:YAG晶体.部分晶片在1000℃的空气气氛中退火25h.借助光学显微镜、扫描电子显微镜(SEM),结合化学腐蚀法,对Tm:YAG晶体退火前后(111)面的缺陷特征进行了研究.Tm:YAG晶体(111)面的位错腐蚀坑呈三角形.在偏光显微镜下观察了退火前后Tm:YAG晶体(111)面的应力双折射.同时应用高分辨X射线衍射法测定了晶体的完整性.实验结果表明,长时间空气气氛下高温退火有效降低了晶体中总的位错密度,提高了晶体质量.

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We report on an optical interference method to fabricate arrayed holes on metal nickel foil and aluminum film deposited on glass substrate by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed that arrayed holes of micrometre-order were fabricated on both metal foil and metal film. The present technique allows one-step, large-area, micrometric processing of metal materials for potential industrial applications.

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在室温下用聚焦的飞秒激光照射高折射率、低双折射的透明含芴结构树脂-对苯二甲酸乙二醇酯(PET)共聚物,探索飞秒激光制备高分子光学功能微结构的可能性。通过紫外-可见吸收光谱、红外光谱、电子自旋共振谱、光学显微镜、扫描电镜及透射电镜等分析手段,对该材料在飞秒激光照射后的结构变化及机理进行研究。结果发现:含芴结构树脂共聚物在飞秒激光照射后产生化学键断裂,生成未成对电子,并形成无定形碳;照射区在可见光区域的吸收增强;随激光能量密度的减少在激光会聚点附近诱导结构由慧尾状向单一细丝转变。演示了三维着色内雕。

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本文描述使用温梯法(TGT)生长(1-↑102)方向的白宝石单晶,应用X射线双晶摇摆曲线(XRC)测定了晶体内部的完整性,再利用KOH熔体腐蚀出样品的r面(1-↑102)上的位错蚀坑,借助扫描电子显微镜(SEM)进行观察,发现r面白宝石的位错腐蚀坑呈等腰三角形,并且有台阶状结构,并分析了位错的成因。

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The Yb:Y3Al5O12/Y3Al5O12 (Yb:YAG/YAG) composite crystals were prepared by thermal bonding method with different technological parameters. The bonding interface of the composite crystals were observed by optical microscope, scanning electron microscope, and atom force microscope. The light scattering experiments for bonding interface of the composite crystals were measured by the laser and transmission spectra. All experiments show that high-quality Yb:YAG/YAG composite crystals without space transition layer and light scattering on the bonding interface can be obtained by thermal bonding method under appropriate technological parameters.

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采用热键合技术制备了Yb:Y3Al5O12/Y3Al5O12(Yb:YAG/YAG)复合晶体,对复合晶体进行了结构表征和键合质量检测,利用光学显微镜和扫描电镜观察了复合晶体横截面的形貌;在偏光显微镜下观察键合区域的应力,利用干涉条纹来表征复合晶体的光学均匀性;通过红外透过光谱的测量来检测复合晶体的键合质量.实验结果表明:热键合技术制备的Yb:YAG/YAG复合晶体键合界面处无界面缺陷,不存在复合界面空间过渡层,光学均匀性良好.

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用热蒸发方法沉积了薄膜滤光片.并将样品分别在去离子水中浸泡10天和30天.通过分光光度计、光学暗场显微镜、及扫描电子显微镜等多种测试手段,对诱导透射滤光片在潮湿环境下的稳定性进行了研究.实验发现,在潮湿环境下滤光片产生的膜层分离都是从薄膜中微缺陷点处开始发生和发展的,微缺陷是影响滤光片环境稳定性的重要原因之一,其中杂质和针孔是滤光片中两种最常见的微缺陷.EDS能谱分析进一步表明,薄膜中杂质缺陷成分即为Al2O3膜料本身,所以不能推测,薄膜沉积中的喷溅可能是微缺陷产生的根本原因,抑制喷溅可以有效提高薄膜滤光

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Optical filters composed of Ag, Al2O3, and ZnSe films were prepared on BK7 substrates by evaporation. By employing spectrophotometer, microscope, scanning electron microscope (SEM), and energy dispersive spectrum (EDS) analysis, the moisture-dependent stability of the samples was tested. The experimental results revealed that filter failure often occurs initially at defect sites. Small sputtering particles and pinhole are found to be two types of defects that induced the optical coating filter failure. The mechanisms of the defect-induced failure of the filters also are discussed in the article. (C) 2005 Elsevier Ltd. All rights reserved.

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在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。利用编程计算得到Al2O3和SiO2的最优物理膜厚分别为42.0nm和96.1nm以及参考波长λ=280nm处最小反射率为0.09%。由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率。实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715。用电子束蒸发法在4H-SiC基底上淀积Al2O3/SiO2双层膜,厚度分别为42nm和96nm。SEM截面图表明淀积的薄膜和基底间具有较强的附着力。实测反射率极小值为0.33%,对应λ=276nm,与理论结果吻合较好。与传统SiO2单层膜相比,Al2O3/SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景。

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A high laser-induced damage threshold (LIDT) TiO2/SiO2 high reflector (HR) at 1064 nm is deposited by e-beam evaporation. The HR is characterized by optical properties, surface, and cross section structure. LIDT is tested at 1064 nm with a 12 ns laser pulse in the one-on-one mode. Raman technique and scanning electron Microscope are used to analyze the laser-induced modification of HR. The possible damage mechanism is discussed. It is found that the LIDT of HR is influenced by the nanometer precursor in the surface, the intrinsic absorption of film material, the compactness of the cross section and surface structure, and the homogeneity of TiO2 layer. Three typical damage morphologies such as flat-bottom pit, delamination, and plasma scald determine well the nanometer defect initiation mechanism. The laser-induced crystallization consists well with the thermal damage nature of HR. (C) 2008 American Institute of Physics.

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In the present study, EA-CATH1 and EA-CATH2 were identified from a constructed lung cDNA library of donkey (Equus asinus) as members of cathelicidin-derived antimicrobial peptides, using a nested PCR-based cloning strategy. Composed of 25 and 26 residues, respectively, EA-CATH1 and EA-CATH2 are smaller than most other cathelicidins and have no sequence homology to other cathelicidins identified to date. Chemically synthesized EA-CATH1 exerted potent antimicrobial activity against most of the 32 strains of bacteria and fungi tested, especially the clinically isolated drug-resistant strains, and minimal inhibitory concentration values against Gram-positive bacteria were mostly in the range of 0.3-2.4 mu g center dot mL-1. EA-CATH1 showed an extraordinary serum stability and no haemolytic activity against human erythrocytes in a dose up to 20 mu g center dot mL-1. CD spectra showed that EA-CATH1 mainly adopts an alpha-helical conformation in a 50% trifluoroethanol/water solution, but a random coil in aqueous solution. Scanning electron microscope observations of Staphylococcus aureus (ATCC2592) treated with EA-CATH1 demonstrated that EA-CATH could cause rapid disruption of the bacterial membrane, and in turn lead to cell lysis. This might explain the much faster killing kinetics of EA-CATH1 than conventional antibiotics revealed by killing kinetics data. In the presence of CaCl2, EA-CATH1 exerted haemagglutination activity, which might potentiate an inhibition against the bacterial polyprotein interaction with the host erythrocyte surface, thereby possibly restricting bacterial colonization and spread.

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E2SiO5 thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er2SiO5 crystalline structure was formed as sample treated at 1100 degrees C for 1 h in O-2 atmosphere. Through proper thermal treatment, the 1.53 mu m Er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 degrees C. Analysis of pump-power dependence of Er3+ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10(21) (photons/cm(2)/sec). Temperature-dependent photoluminescence (PL) of Er2SiO5 was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er2SiO5 films has been demonstrated with Er3+ concentration of 10(22)/cm(3), and it opens a promising way towards future Si-based light source for Si photonics. (C) 2009 Elsevier B.V. All rights reserved.