The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Effect of La3+ on microwave dielectric properties of (Pb0.45Ca0.55) (Fe0.5Nb0.5)O-3 ceramics

In this work, microwave dielectric properties of A-site substitution by La3+ in (Pb0.45Ca0.55) (Fe0.5Nb0.5) 03 system were investigated. Microwave dielectric properties of A-site charge unbalance substitution of [(Pb0.45Ca0.55)(1-x) La-x] (Fe0.5Nb0.5)O-3(+) (P45CLFN) were improved because the solid solution of small amount of surplus La3+ with (Pb, Ca)(2+) could eliminate oxygen vacancies, and the formation of secondary phase (pyrochlore) was also caused by surplus La3+. The decreasing of dielectric constant with the increase of La3+ content is due to the formation of pyrochlore. The grain size is changed slightly and Q(f) values (7000 similar to 7300 GHz) are almost unchanged at x = 0.02 similar to 0.10, but the temperature coefficient of resonant frequency (TCF) are increased and changed from negative to positive. TCF is zero at x 0.075 with Q(f) = 7267 GHz and K = 89. TCF of all specimens are within +/- 5 x 10(-6)degrees C-1.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition

The (Ga,Mn,N) samples were grown by the implantation of low-energy Mn ions into GaN/Al2O3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. Auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the Mn ions reach deeper in samples with higher substrate temperatures. Clear X-ray diffraction peak from (Ga,Mn)N is observed in samples grown at the higher substrate temperature. It indicates that under optimized substrate temperature and annealing conditions the solid solution (Ga,Mn)N phase in samples was formed with the same lattice structure as GaN and different lattice constant. (C) 2003 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

微/纳米结构氟化物溶剂热合成及其光学性质研究

本文主要利用Liquid-Solid-Solution（LSS）方法合成了一系列的碱土金属氟化物纳米粒子, 具有微米结构的Ba2ClF3体系以及复合金属氟化物NaMgF3纳米晶。利用X－射线衍射（XRD）、透射电镜（TEM）、扫描电镜（FE-SEM）、红外光谱（IR）等技术对合成材料的结构、形貌、组成等进行表征，采用紫外-可见吸收光谱、荧光光谱（PL）、荧光寿命等手段评价合成材料的光致发光性能；探讨了油酸作为表面活性剂在纳米晶形成过程中的作用，并阐述了纳米晶的生长过程及可能的生长机理。对氟化物的胶体溶液的发光性质作了研究，并提出了可能的发光机理。 采用LSS方法制备的一系列碱土金属氟化物（CaF2，SrF2，BaF2）纳米晶结晶完好，具有碱土金属氟化物体材料的立方相结构。制备所得的碱土金属氟化物纳米晶分别具有被截的八面体，立方体和立方片形貌，粒子尺寸较均匀，分布范围较窄。制备的纳米晶由于表面被油酸的长烷基链所包覆，可以溶于非极性溶剂如环己烷形成稳定透明的胶体溶液。三种纳米晶的环己烷胶体溶液在光致发光光谱中在400nm左右出现了一个较强的发射峰。这可能是由在纳米晶的形成过程中产生的缺陷和电子中心所造成的。 采用LSS方法在较低的温度下（160oC）成功地制备了一维Ba2ClF3六方微米棒。制备的Ba2ClF3微米晶结晶完好，具有其相应体材料的斜方六面体结构。由于斜方六面体相晶胞表现出六方相的特性，因此具有各向异性。在包覆剂油酸的作用下，生成一维的六方微米棒。制备的六方微米棒具有较好的分散性，光滑的棒表面以及清晰的棱。同时，油酸的加入，氢氧化钠量，反应物加入量以及反应时间均对形貌和尺寸有所影响。通过调节合成参数，我们成功了具有不同尺寸和长宽比的微米棒。 采用LSS方法制备了复合氟化物NaMgF3纳米晶。制备的NaMgF3纳米晶结晶完好，具有正交晶相的结构。粒子平均尺寸约为38.6 nm。所得的纳米晶可溶于环己烷溶剂形成稳定透明的胶体溶液，其胶体溶液在400 nm左右有一个强的发射峰。

Modification of Fe/Cu Multilayers under 2-MeV Xe20+ Irradiation

Multilayers with a structure of Si/[Fe(10 nm)/CU(10 nm)](5) were deposited on Si(100) substrates and then irradiated at room temperature by using 2-MeV Xe20+. The modifications of the multilayers were characterized using a depth profile analysis of the Auger electron spectroscopy (AES) data and the evolution of crystallite structures of the multilayers were analyzed by using X-ray diffraction (XRD). The AES depth profiles indicated that de-mixing of the Fe and the Cu layers was observed at low ion fluences, but inter-mixing of the Fe and the Cu layers was found at high ion fluences and destroyed the layered structure of the multilayers. The obtained XRD patterns showed that, after irradiation by 2-MeV Xe20+ at; 2 x 10(16) ions/cm(2), the peaks of the multilayers related to a Cu-based fee solid solution and an Fe-based bee solid solution phase became visible, which implied that the inter-mixing at the Fe/Cu interface resulted in the formation of new phases. A possible mechanism of modification in the Fe/Cu multilayers induced by ion irradiation is briefly discussed.

Modification of Fe/Cu multilayers under 400 keV Xe20+ irradiation

Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe20+ in a wide range of irradiation fluences. As a comparison, thermal annealing at 300-900 degrees C was also carried out in vacuum. Then the samples were analyzed by XRD and the evolution of crystallite structures induced by irradiation was investigated. The obtained XRD patterns showed that, with increase of the irradiation fluence, the peaks of Fe became weaker, the peaks related to Cu-based fcc solid solution and Fe-based bcc solid solution phase became visible and the former became strong gradually. This implied that the intermixing at the Fe/Cu interface induced by ion irradiation resulted in the formation of the new phases which could not be achieved by thermal annealing. The possible intermixing mechanism of Fe/Cu multilayers induced by energetic ion irradiation was briefly discussed.

Reduction property and catalytic activity of Ce1-XNiXO2 mixed oxide catalysts for CH4 oxidation

Ce1-XNiXO2 oxides with X varying from 0.05 to 0.5 were prepared by different methods and characterized by XRD and TPR techniques. Ce(0.7)Mi(0.3)O(2) sample prepared by sol-gel method shows the highest reducibility and the highest catalytic activity for methane combustion. Three kinds of Ni phases co-exist in the Ce1-XNiXO2 catalysts prepared by sol-gel method: (i) aggregated NiO on the support CeO2, (ii) highly dispersed NiO with strong interaction with CeO2 and (iii) Ni atoms incorporated into CeO2 lattice. The distribution of different Ni species strongly depends on the preparation methods. The highly dispersed NiO shows the highest activity for methane combustion. The NiO aggregated on the support CeO2 shows lower catalytic activity for methane combustion, while the least catalytic activity is found for the Ni species incorporated into CeO2. Any oxygen vacancy formed in CeO2 lattice due to the incorporating of Ni atoms adsorbs and activates the molecular oxygen to form active oxygen species. So the highest catalytic activity for methane combustion on Ce0.7Ni0.3O2 catalyst is attributed not only to the highly dispersed Ni species but also to the more active oxygen species formed. (C) 2002 Elsevier Science B.V. All rights reserved.

单分散磁性纳米粒子靶向药物载体

本文综述了单分散磁性氧化铁纳米粒子的主要制备方法、表面修饰以及在生物医学靶向药物方面的应用研究进展。金属有机前驱体高温热分解法、溶剂热合成法和LSS(liquid-solid-solution)法是目前制备高质量单分散磁性纳米粒子比较有效的手段。通过表面修饰制备出的具有良好水溶性、生物相容性和活性功能基团的磁靶向药物载体将可能实现定位蓄积、高效载药、控制释药和可生物降解等靶向治疗癌症的目的。开发出具有荧光检测、主动靶向识别、高效载药、智能控药释放、无毒副作用和生物相容性于一体的多功能靶向药物载体将是其发展趋势。

The microstructure and mechanical properties of Mg-8Zn-8Al-4RE magnesium alloy

The Mg-8Zn-8Al-4RE (RE = mischmetal, mass%) magnesium alloy was prepared by using casting method. The microstructure and mechanical properties of as-cast alloy, solid solution alloy and aged alloy samples have been investigated. Optical microscopy, X-ray diffractometery and scanning electron microscope attached energy spectrometer were used to characterize the microstructure and phase composition for the alloy. Net shaped tau-Mg-32(Al,Zn)(49) phase was obtained at the grain boundary, and needle-like or blocky Al11RE3 phase disperses in grain boundary and alpha-Mg matrix. The tau-Mg-32(Al,Zn)(49) phase disappeared during solution treatment and a new phase of Al(2)CeZn2 formed during subsequent age treatment. The mechanical properties were performed by universal testing machine at room temperature, 150 degrees C and 200 degrees C, separately. The ultimate tensile strength of as-cast alloy is lower compared to an age treatment alloy at 200 degrees C for 12h. The strengths decreased with enhancing test temperature, but elongation has not been effect by age treatment.

Effect of cerium on microstructure and electrochemical performance of Ti-V-Cr-Ni electrode alloy

Effect of cerium on the microstructure and electrochemical performance of the Ti0.25V0.35-xCexCr0.1Ni0.3 (x = 0, 0.005) electrode alloy was investigated by X-ray diffraction (XRD), field emission scanning electron microscopy/energy dispersive X-ray spectrometry (FESEM-EDS), and electrochemical impedance spectroscopy (EIS) measurements. On the basis of XRD and FESEM-EDS analysis, the alloy was mainly composed of V-based solid solution with body-centered-cubic structure and TiNi-based secondary phase. Ce did not exist in two phases, instead, it existed as Ce-rich small white particles, with irregular edges, distributed near the grain boundaries of the V-based solid solution phase. Discharge capacity, cycle stability, and high-rate discharge ability of the alloy electrode were effectively improved with the addition of Ce at 293 K. It was very surprising that the charge retention was abnormal with larger discharge capacity after standing at the open circuit for 24 h. EIS indicated that addition of Ce improved the dynamic performance, which caused the charge transfer resistance (R-T) to decrease and exchange current density (I-0) to increase markedly. The exchange current density of the electrochemical reaction on the alloy surface with Ce addition was about 2.07 and 3.10 times larger than that of the alloy without Ce at 303 and 343 K, respectively.

A new family of Ce6MoO15 as fast oxide ion conductor

A novel solid solution Ce6MoO15 was achieved. Their structure and oxide ionic conductivity were studied. Based on Ce6MoO15, rare earth element substitution on cerium site shows that all resulting oxides enhance the conductivity further, and have high oxide-ion conductivity, which may be a kind of promising material for SOFCs.

Microstructure and electrochemical performance of Ti0.17Zr0.08V0.34Pd0.01Cr0.1Ni0.3 electrode alloy

The microstructure and electrochemical performance of Ti0.17Zr0.08V0.34Pd0.01Cr0.1Ni0.3 electrode alloy have been investigated using X-ray diffraction, field emission scanning electron microscopy-energy dispersive spectroscopy, inductively coupled plasma and electrochemical impedance spectroscopy. The alloy electrode has a higher discharge capacity than an AB(5) type alloy within a wider temperature span. The increase of the charge-transfer-resistances, and the dissolutions of V and Zr were responsible for the performance degradation of the alloy electrode.