Magnetoexciton polaritons in planar semiconductor microcavities

We study the magnetoexciton polaritons in planar semiconductors microcavities by a quantum approach developed in the strong and weak magnetic-field limits. Ht is shown that the vacuum Rabi splittings with different Landau level indices are close to each other and tend to be proportional to B at sufficiently large values of the magnetic field. Also, we show that the calculated results are in good agreement with the experimental observations. [S0163-1829(99)10215-7].

Terahertz pulse generation with LT-GaAs photoconductive antenna

Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 degrees C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 degrees C under As-rich condition. THz emitters were fabricated on this LTGaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.

Picosecond ultra-wideband short pulse radiated by antenna arrays

This report presents the experiments to study the characteristics of the picosecond ultra-wideband pulses coherent radiation. The testing involves bow-tie horn antennas for both the transninting and receiving antenna. Sixteen channels of electrical pulses with 290 ps duration and jitter < 30 ps have been used. The antenna arrays with various frames of 4 x 1, 4 x 2, 4 x 3, 4 x 4 are employed to radiate the pulses. The receiving antenna measures the electrical field in different distance front the transmitting antennas arrant The results show that if the pulses are in coherent condition, the peak power pulse of output by antennas array with N elements are N-2 of that of the single element antenna. (c) 2007 Wiley Periodicals, Inc.

SCATTERING AND RESONANT-TUNNELING THEORY FOR A CYLINDRICAL WELL IN PLANAR STRUCTURES

A two-dimensional atomic scattering theory is developed for scattering of electrons by a circularly symmetric quantum structure in the two-dimensional electron gas. It is found that the scattering cross section oscillates as a function of ka where k is the electron wave vector and a is the radius of the cylindrical potential barrier. If there is a quantum well inside the potential barrier, there appears a series of sharp resonant-tunneling peaks superposed on the original scattering-cross-section curves. The width of the resonant-tunneling peak depends sensitively on the thickness, the height of the potential barrier, and the electron energy.

A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression

A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10~5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.

Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃

The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.

A semiconductor laser suitably fabricated by planar technology

The semiconductor microlasers with an equilateral triangle resonator which can be fabricated by dry etching technique from the laser wafer of the edge emitting laser, are analyzed by FDTD technique and rate equations. The results show that ETR microlaser is suitable to realize single mode operation. By connecting an output waveguide to one of the vertices of the ETR, we still can get the confined modes with high quality factors. The EM microlasers are potential light sources for photonic integrated circuits.

Mode theory and analysis of planar array waveguides

Bloch modes can be excited in planar array due to its periodic lateral refractive index. The power coupled into each eigenmode of the array waveguides is calculated through the overlap integrals of the input field with the eigenmode fields of the coupled infinite array waveguides projected onto the x-axis. Low losses can be obtained if the transition from the array to the free propagation region is adiabatic. Due to the finite resolution of lithographic process the gap between the waveguides will stop abruptly, however, when the waveguides come into too close together. Calculation results show that losses will occur at this discontinuity, which are dependent on the ratio of the gap between the waveguides and grating pitch and on the confinement of field in the array waveguides. Tapered waveguides and low index contrast between the core and cladding layers can lower the transmitted losses.

Segmented HPGe平面型位置灵敏探测器阵列的γ成像分析；Gamma-ray imaging analysis by using array of segmented planar HPGe detectors

探测器位置分辨能力的高低是实现γ成像的一个重要指标.Segmented HPGe平面型位置灵敏探测器能够很好地给出γ射线与探测器晶体相互作用的作用点位置信息.利用由这种探测器组成的探测器阵列对~(22)Na标准源进行了γ成像实验.结果能够区分出标准源两个不同的摆放位置的细微差别,并与实际情况符合得很好.从而检验了Segmented HPGe平面型位置灵敏探测器的位置分辨能力.

Synthesis of novel ferrocenylphosphine-amidine ligands with central and planar chirality and their diastereomeric effect in Pd-catalyzed asymmetric allylic alkylation

Some novel ferrocenylphosphine-amidine ligands with central and planar chirality were prepared from (R,S-p)-PPFNH2-R 3 and its diastereomer (S,S-p)-PPFNH2 3a. The efficiency and diastereomeric impact of these ferrocenylphosphine-amidine ligands in the palladium-catalyzed asymmetric allylic substitution was examined, and up to 96% e.e. with 98% yield was achieved by the use of ligand (R,S-p)-4a with a methyl group in the amidino moiety. The results also indicated that (R)-central chirality and (S-p)-planar chirality in these ferrocenylphosphine-amidine ligands were matched for the palladium-catalyzed asymmetric allylic alkylation. (C) 2003 Elsevier Ltd. All rights reserved.

Synthesis of novel P-ketimine bidentate ferrocenyl ligands with central and planar chirality and comparsion in the catalytic activity between P-ketimine and P-aldimine

A series of novel ferrocenylphosphine-ketimine ligands 6 were prepared by reaction of (R,S-p)-PPFNH2-R or (S,S-p)-PPFNH2 with a variety of m-substituted acetophenones. A different catalytic activity was observed between ferrocenylphosphine-ketimine ligands and corresponding aldimine ligands. The efficiency and diastereomeric impact of these ferrocenylphosphine-ketimine ligands in Pd-catalyzed asymmetric allylic alkylation were first investigated, and higher enantioselectivity of over 98% e.e. with 95% yield was obtained by the use of ferrocenylphosphine-ketimine ligands. However, in Rh-catalyzed asymmetric hydrosilylation of aryl ketones, only 42% e.e. was obtained by the use of ferrocenylphosphine-ketimine ligands compared to 90% e.e. with the use of aldimine ligands. (C) 2003 Elsevier Ltd. All rights reserved.

A soluble nonionic surfactant as electron injection material for high-efficiency inverted bottom-emission organic light emitting diodes

A soluble nonionic surfactant, polyethylenimine 80% ethoxylated (PEIE) solution, was used as the electron injection material in inverted bottom-emission organic light emitting diodes (OLEDs). The transparent PEIE film was formed on indium-tin-oxide cathode by simple spin-coating method and it was found that the electron injection was greatly enhanced. The devices with PEIE electron injection layer had achieved significant enhancement in luminance and efficiency. The maximum luminance reached 47 000 cd/m(2), and the maximum luminance efficiency and power efficiency arrived at 19.7 cd/A and 10.6 lm/W, respectively.

Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes

We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq(3)) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resulting in a large increase in luminance and efficiency. The maximum luminance, current efficiency, and power efficiency reach 21 000 cd/cm(2), 6.5 cd/A, and 3.5 lm/W, respectively, which are 40%-50% higher in efficiency than that of IBOLEDs with cesium carbonate (Cs2CO3) doped Alq(3) as the electron injection layer, where the efficiencies are only 4.5 cd/A and 2.2 lm/W.