Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Hole trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy (MOVPE) are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3 x 10(17) cm(-3) at room temperature. The DLTS spectrum has a dominant peak D-1 with activation energy of 0.41+/-0.05 eV, accompanied by two additional peaks with activation energies of 0.49+/-0.09 eV (D-2) and 0.59+/-0.05 eV (D-3). It was found that the dominant peak D-1 consists of five peaks, each of which has different activation energy and capture cross section. A relevant model for these levels is presented in relation to the Mg-N-H complexes. (C) 1998 American Institute of Physics. [S0003-6951(98)04340-X].

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (PL) in a temperature range of 10-200 K using excitation power densities between 0.35 W/cm(2) and 20 W/cm(2). It is found that the intensity of the highest-energy PL peak of the ordered Ga0.5In0.5P epilayer decreases first, then increases and finally goes down again with increasing temperature. A model of ordered Ga0.5In0.5P epitaxial layers is proposed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type-II quantum well structure with band-tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. (C) 1995 American Institute of Physics.

Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy

Lattice matched Ga_(1-x)In_xAs_ySb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type GaSb substrates by liquid phase epitaxy. Mirror-like surfaces for the epitaxial layers were achieved and evaluated by atomic force microscopy. The composition of the Ga_(1-x)In_xAs_ySb_(1-y) layer was characterized by energy dispersive X-ray analysis with the result that x = 0.2, y = 0.17. The absorption edges of the Ga_(1-x)In_xAs_ySb_(1-y) films were determined to be 2. 256μm at room temperature by Fourier transform infrared transmission spectrum analysis, corresponding to an energy gap of 0.55eV. Hall measurements show that the highest obtained electron mobility in the undoped p-type samples is 512cm2~/(V·s) and the carrier density is 6. 1×10~(16)cm~(-3) at room temperature. Finally, GaInAsSb based thermophotovoltaic cells in different structures with quantum efficiency values of around 60% were fabricated and the spectrum response characteristics of the cells are discussed.

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

Cubic sinusoidal phase mask: Another choice to extend the depth of field of incoherent imaging system

Wave-front coding is a well known technique used to extend the depth of field of incoherent imaging system. The core of this technique lies in the design of suitable phase masks, among which the most important one is the cubic phase mask suggested by Dowski and Cathey (1995) [1]. In this paper, we propose a new type called cubic sinusoidal phase mask which is generated by combing the cubic one and another component having the sinusoidal form. Numerical evaluations and real experimental results demonstrate that the composite phase mask is superior to the original cubic phase mask with parameters optimized and provides another choice to achieve the goal of depth extension. (C) 2009 Elsevier Ltd. All rights reserved.

Adenovirus-mediated wild-type P53 Transfer radiosensitizes H1299 cells to subclinical-dose carbon-ion irradiation through the restoration of p53 function

To determine whether adenovirus-mediated wild-type p53 transfer after radiotherapy could radiosensitize non-small-cell lung cancer (NSCLC) cells to subclinical-dose carbon-ion beam (C-beam), H1299 cells were exposed to a C-beam or -ray and then infected with 5 MOI of AdCMV-p53 or GFP (C-beam or -ray with p53 or GFP).Cell cycle was detected by flow cytometric analysis. The apoptosis was examined by a fluorescent microscope with DAPI staining. DNA fragmentation was monitored by the TUNEL assay. P53 mRNA was detected by reverse-transcriptase polymerase chain reaction. The expression of p53, MDM2, and p21 was monitored by Western blot. Survival fractions were determined by colony-forming assay. The percentages of G1-phase cells in C-beam with p53 increased by 8.2%–16.0%, 5.2%–7.0%, and 5.8%–18.9%, respectively, compared with C-beam only, -ray with p53, or p53 only. The accumulation of G2-phase cells in C-beam with p53 increased by 5.7%–8.9% and 8.8%–14.8%, compared with those in -ray with p53 or p53 only, respectively. The percentage of apoptosis for C-beam with p53 increased by 7.4%–19.1%, 5.8%–11.7%, and 5.2%–19.2%, respectively, compared with C-beam only, -ray with p53, or p53 only. The level of p53 mRNA in C-beam with p53 was significantly higher than that in p53 only. The expression level of p53 and p21 in C-beam with p53 was significantly higher than that in both C-beam with GFP and p53 only. The survival fractions for C-beam with p53 were significantly less than those for the other groups (p 0.05). The data suggested that AdCMV-p53 transfer could more efficiently radiosensitize H1299 cells to subclinical-dose C-beam irradiation through the restoration of p53 function.

Isoscalar Giant Monopole Resonance in Relativistic Continuum Random Phase Approximation

The isoscalar giant monopole resonance (ISGMR) in nuclei is studied in the framework of a fully consistent relativistic continuum random phase approximation (RCRPA). In this method the contribution of the continuum spectrum to nuclear excitations is treated exactly by the single particle Green's function technique. The negative energy states in the Dirac sea are also included in the single particle Green's function in the no-sea approximation. The single particle Green's function is calculated numerically by a proper product of the regular and irregular solutions of the Dirac equation. The strength distributions in the RCRPA calculations, the inverse energy-weighted sum rule m(-1) and the centroid energy of the ISGMR in Sn-120 and Pb-208 are analysed. Numerical results of the RCRPA are checked with the constrained relativistic mean field model and relativistic random phase approximation with a discretized spectrum in the continuum. Good agreement between them is achieved.

Improved BCS-type pairing for the relativistic mean-field theory

A density-dependent delta interaction (DDDI) is proposed in the formalism of BCS-type pairing correlations for exotic nuclei whose Fermi surfaces are close to the threshold of the unbound state. It provides the possibility to pick up those states whose wave functions are concentrated in the nuclear region by making the pairing matrix elements state dependent. On this basis, the energy level distributions, occupations, and ground-state properties are self-consistently studied in the RMF theory with deformation. Calculations are performed for the Sr isotopic chain. A good description of the total energy per nucleon, deformations, two-neutron separation energies and isotope shift from the proton drip line to the neutron drip line is found. Especially, by comparing the single-particle structure from the DDDI pairing interaction with that from the constant pairing interaction for a very neutron-rich nucleus it is demonstrated that the DDDI pairing method improves the treatment of the pairing in the continuum.

Higher Moments of Net Proton Multiplicity Distributions at RHIC

200 GeV corresponding to baryon chemical potentials (mu(B)) between 200 and 20 MeV. Our measurements of the products kappa sigma(2) and S sigma, which can be related to theoretical calculations sensitive to baryon number susceptibilities and long-range correlations, are constant as functions of collision centrality. We compare these products with results from lattice QCD and various models without a critical point and study the root s(NN) dependence of kappa sigma(2). From the measurements at the three beam energies, we find no evidence for a critical point in the QCD phase diagram for mu(B) below 200 MeV.

Non-commutative oscillator with Kepler-type dynamical symmetry

A 3-dimensional non-commutative oscillator with no mass term but with an appropriate momentum-dependent potential admits a conserved Runge-Lenz vector, derived from the dual description in momentum space. The trajectories lie on ellipses. The dynamical symmetry allows for an algebraic determination of the bound-state spectrum and extends to o(4,2). (c) 2010 Elsevier B.V. All rights reserved.

Relativistic Continuum Random Phase Approximation and Applications II. Applications

The fully consistent relativistic continuum random phase approximation (RCRPA) has been constructed in the momentum representation in the first part of this paper. In this part we describe the numerical details for solving the Bethe-Salpeter equation. The numerical results are checked by the inverse energy weighted sum rules in the isoscalar giant monopole resonance, which are obtained from the constraint relativistic mean field theory and also calculated with the integration of the RCRPA strengths. Good agreement between the misachieved. We study the effects of the self-consistency violation, particularly the currents and Coulomb interaction to various collective multipole excitations. Using the fully consistent RCRPA method, we investigate the properties of isoscalar and isovector collective multipole excitations for some stable and exotic from light to heavy nuclei. The properties of the resonances, such as the centroid energies and strength distributions are compared with the experimental data as well as with results calculated in other models.

Microencapsulation of n-hexadecane as a phase change material in polyurea

For thermal energy storage application, polyurea microcapsules about 2.5 mum in diameter containing phase change material were prepared using interfacial polycondensation method. In the system droplets in microns are first formed by emulsifying an organic phase consisting of a core material ( n-hexadecane) and an oil-soluble reactive monomer, toluene-2, 4-diisocyanate (TDI), in an aqueous phase. By adding water-soluble reactive monomer, diamine, monomers TDI and diamine react with each other at the interface of micelles to become a shell. Ethylenediamine (EDA), 1, 6-hexane diamine (HDA) and their mixture were employed as water-soluble reactive monomers. The effects of diamine type on chemical structure and thermal properties of the microcapsules were investigated by FT-IR and thermal analysis respectively. The infrared spectra indicate that polyurea microcapsules have been successfully synthesized; all the TG thermographs show microcapsules containing n-hexadecane can sustain high temperature about 300 degreesC without broken and the DSC measurements display that all samples possess a moderate heat of phase transition; thermal cyclic tests show that the encapsulated paraffin kept its energy storage capacity even after 50 cycles of operation. The results obtained from experiments show that the encapsulated n-hexadecane possesses a good potential as a thermal energy storage material.

Capillary electrochromatographic separation of enantiomers on chemically bonded type of cellulose derivative chiral stationary phases with a positively charged spacer

Positively charged chiral stationary phases (CSPs) were prepared for capillary electrochromatography (CEC) separation of enantiomers by chemically immobilizing cellulose derivatives onto diethylenetriaminopropylated silica (DEAPS) with tolylene-2,4-diisocyanate (TDI) as a spacer reagent. Anodic electroosmotic mobility was observed in both nonaqueous and aqueous mobile phases due to the positively charged amines on the surface of the prepared CSPs. For comparison, the traditionally used 3-aminopropyl silica (APS) was also adopted as the base material instead of DEAPS to prepare CSP. It was observed that the EOF on the DEAPS-based CSP was 18%-60% higher than that on the APS-based CSP under nonaqueous mobile phase conditions. Separation of enantiomers in CEC was performed on the positively charged CSPs with the nonaqueous mobile phases of pure ethanol or mixture of hexane-alcohol and the aqueous phases of acetonitrile-water or 95% ethanol. Fast separation of enantiomers was achieved on the newly prepared CSPs.

Crystal structure and charge transfer energy of the vaterite-type orthoborate YBO3:Eu

Ligand-to-metal charge transfer energies of YBO3:Eu have been investigated from the chemical bond viewpoint. The chemical bond parameters, such as the covalency, the polarizability of the chemical bond volume, and the presented charge of the ligands in the chemical bond have been quantitatively determined based on the dielectric theory of complex crystal. We calculated the environmental factor (h(e)), which is the major factor influencing the charge transfer energy in the compounds. The calculated results show that the suitable group space of YBO3 is C2/c. The method provides us with a supplementary tool to judge the proper structure when the structure of the crystal has many uncertain space groups.