Molecular and morphological data suggest that Spinibarbus caldwelli (Nichols) (Teleostei : Cyprinidae) is a valid species

The taxonomic problem of the cyprinid species of genus Spinibarbus, occurring in southern China and northern Vietnam, was resolved on the basis of molecular and morphological analyses. Spinibarbus caldwelli and Spinibarbus hollandi have a smooth posterior edge of the last unbranched dorsal fin ray among species in the genus. Spinibarbus caldwelli is currently regarded as a junior synonym of S. hollandi because of ambiguities in diagnostic characters. In this article, 11 mtDNA cytochrome b sequences of Spinibarbus specimens were analyzed together with Barbodes gonionotus and Puntius conchonius as outgroups. Our results showed that specimens identified as S. hollandi from Taiwan were different from those from the Asian mainland at a high level of genetic divergence (0.097-0.112), which is higher than that between the two valid species, S. sinensis and S. yunnanensis ( 0.089), and suggested that Taiwan specimens should be considered as a different species from the Asian mainland one. In a molecular phylogenetic analysis, the sister-group relationship between Taiwan specimens and the Asian mainland specimens was supported strongly by a high confidence level ( 100% in bootstrap value). Further analysis of morphological characters showed that overlap of diagnostic characters is much weaker than previously suggested. Taiwan specimens had 8 branched rays in the dorsal fin, whereas those from the mainland had almost 9-10. The molecular and morphological differences suggest S. caldwelli to be valid. The molecular divergence shows the genetic speciation of S. hollandi and S. caldwelli might have occurred 5.6-4.9 million years ago; the former could be a relict species in Taiwan, and the latter dispersed in the Asian mainland.

Morphological variation of Keratella cochlearis (Rotatoria) in a shallow, eutrophic subtropic Chinese lake

The duration of occurrence of two morphological forms of Keratella cochlearis varied seasonally in Lake Donghu, a shallow eutrophic lake in China. The total lengths of both K cochlearis tecta and K cochlearis cochlearis were negatively correlated with the water temperature. Total length of K cochlearis tecta may also have been influenced by the degree of eutrophication or available food.

Dietary-morphological relationships of fishes in Liangzi Lake, China

Species in Liangzi Lake were clustered into four trophic groups: Hemiramphus kurumeus and Hemiculter bleekeri bleekeri fed predominantly on terrestrial insects; Carassius auratus auratus and Abbottina rivularis on non-animal food; Hypseleotris swinhonis, Ctenogobius giurinus, Pseudorasbora parva and Toxabramis swinhonis on cladocerans or copepods; Culterichthys erythropterus on decapod shrimps. Gut length, mouth width, mouth height, gill raker length and gill raker spacing, varied widely among species. With the exception of three species pairs (H. swinhonis, C. glurinus; C. erythropterus, H. kurumeus; T. swinhonis, H. bleekeri bleekeri), principal components analysis of morphological variables revealed over-dispersion of species. Canonical correspondence analysis of dietary and morphological data revealed five significant dietary-morphological correlations. The first three roots explained > 85% of the total variance. The first root reflected mainly the relationship of gut length to non-animal feud, with an increase in gut length associated with an increase in non-animal food. The second root was influenced strongly by the relationship of the gill raker spacing to consumption of copepods, with an increase in gill raker spacing associated positively with copepods in the diet. The third root was influenced by the relationship of mouth gape to consumption of fish and decapod shrimps, with an increase in mouth gape associated with more fish and decapod shrimps in the diet. These significant dietary-morphological relationships supported the eco-morphological hypotheses that fish morphology influence food use, and morphological variation is important in determining ecological segregation of co-existing fish species. (C) 2001 The Fisheries Society of the British Isles.

The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films have been fabricated by implanting Mn into unintentionally doped nonpolar a-plane GaN films at room temperature, and a subsequent rapid thermal annealing. The X-ray diffraction analysis shows that after rapid thermal annealing the peak of the GaN X-ray diffraction curve shifts to a lower angle, indicating a slight expansion of the GaN crystal lattice. Atomic force microscopy analysis shows that the annealing process does not change the morphology of the sample greatly. Magnetic property analysis indicates that the as-annealed sample shows obvious ferromagnetic properties. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Structural, morphological, and magnetic characteristics of Cu-implanted nonpolar GaN films

Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentionally doped nonpolar a-plane(1 1 (2) over bar 0) GaN films and a subsequent thermal annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The sample shows a clear ferromagnetism behavior at room temperature. It is significantly shown that with a Cu concentration as low as 0.75% the sample exhibits a saturation magnetization about 0.65 mu(B)/Cu atom. Moreover, the possible origin of the ferromagnetism for the sample was also discussed briefly. (C) 2009 Elsevier B. V. All rights reserved.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

The morphological evolution of GaN thin films grown on sapphire by metalorganic chemical vapor deposition was demonstrated to depend strongly on the growth pressure of GaN nucleation layer (NL). For the commonly used two-step growth process, a change in deposition pressure of NL greatly influences the growth mode and morphological evolution of the following GaN epitaxy. By means of atomic force microscopy and scanning electron microscope, it is shown that the initial density and the spacing of nucleation sites on the NL and subsequently the growth mode of FIT GaN epilayer may be directly controlled by tailoring the initial low temperature NL growth pressure. A mode is proposed to explain the TD reduction for NL grown at relatively high reactor pressure. (C) 2003 Elsevier B.V. All rights reserved.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.