The application of spline wavelet transform to the determination of electroosmotic mobility in capillary electrophoresis

The rule of current change was studied during capillary electrophoresis (CE) separation process while the conductivity of the sample solution was different from that of the buffer. Using a quadratic spline wavelet of compact support, the wavelet transforms (WTs) of capillary electrophoretic currents were performed. The time corresponding to the maximum of WT coefficients was chosen as the time of current inflection to calculate electroosmotic mobility. The proposed method was suitable for different CE modes, including capillary zone electrophoresis, nonaqueous CE and micellar electrokinctic chromatography. Compared with the neutral marker method, the relative errors of the developed method for the determination of electroosmotic mobility were all below 2.5%. (C) 2002 Elsevier Science B.V. All rights reserved.

Capillary electrochromatography for separation of peptides driven with electrophoretic mobility on monolithic column

A mode of capillary electrochromatography for separation of ionic compounds driven by electrophoretic mobility on a neutrally hydrophobic monolithic column was developed. The monolithic column was prepared from the in situ copolymerization of lauryl methacrylate and ethylene dimethacrylate to form a C-12 hydrophobic stationary phase. It was found that EOF in this hydrophobic monolithic column was very poor, even the pH value of mobile phase at 8.0. The peptides at acidic buffer were separated on the basis of their differences in electrophoretic mobility and hydrophobic interaction with the stationary phase; therefore, different separation selectivity can be obtained in CEC from that in capillary zone electrophoresis (CZE). Separation of peptides has been realized with high column efficiency (up to 150 000 plates/meter) and good reproducibility (migration time with RSD < 0.5%), and all of the peptides, including some basic peptides, showed good peak symmetry. Effects of the mobile phase compositions on the retention of peptides at low pH have been investigated in a hydrophobic capillary monolithic column. The significant difference in selectivity of peptides in CZE and CEC has been observed. Some peptide isomers that cannot be separated by CZE have been successfully separated on the capillary monolithic column in this mode with the same buffer used.

Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility

Air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V-1 s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system.

Phthalocyanato tin(IV) dichloride: An air-stable, high-performance, n-type organic semiconductor with a high field-effect electron mobility

Phthalocyanato tin(IV) dichloride, an axially dichloriniated MPc, is an air-stable high performance n-type organic semiconductor with a field-effect electron mobility of up to 0.30 cm(2) V-1 s(-1). This high mobility together with good device stability and commercial availability makes it a most suitable n-type material for future organic thin-film transistor applications.

Poly(oligothiophene-alt-benzothiadiazole)s: Tuning the Structures of Oligothlophene Units toward High-Mobility "Black" Conjugated Polymers

A series of donor-acceptor low-bandgap conjugated polymers, i.e., PTnBT (n = 2-6), composed of alternating oligothiophene (OTh) and 2,1,3-benzothiadiazole (BT) units were synthesized by Stille cross-coupling polymerization. The number of thiophene rings in OTh units, that is n, was tuned from 2 to 6. All these polymers display two absorption bands in both solutions and films with absorption maxima depending on n. From solution to film, absorption spectra of the polymers exhibit a noticeable red shift. Both high- and low-energy absorption bands or P'F5BT and PT6BT films locate in the visible region, which are at 468 and 662 nm for PT5BT and 494 and 657 nm for PT6BT.

High mobility vanadyl-phthalocyanine polycrystalline films for organic field-effect transistors

The organic films of vanadyl-phthalocyanine (VOPc) compounds showed weak epitaxy growth (WEG) behavior on thin ordered para-sexiphenyl (p-6P) layer with high substrate temperature. The WEG of VOPc molecules standing up on the p-6P layer leaded to high in-plane orientation and their layer-by-layer growth behavior. In consequence, high quality VOPc films were obtained, which were consisted of lamellar crystals. Organic field-effect transistors with VOPc/p-6P films as active layers realized high mobility of above 1 cm(2)/V s. This result indicated that nonplanar compounds can obtain a device performance better than planar compounds, therefore, it may provide a rule to find disklike organic semiconductor materials.

Weak epitaxy growth affording high-mobility thin films of disk-like organic semiconductors

Thin films of phthalocyanine compounds show weak epitaxial growth on a monodomain film of a rod-like molecule (see figure). The resulting organic electronic devices exhibit high charge carrier mobilities close to those of the single-crystal devices.

Thickness dependence of mobility in CuPc thin film on amorphous SiO2 substrate

Hole mobility in a copper-phthalocyanine (CuPc)-based top-contact transistor has been studied with various organic layer thicknesses. It is found that the transistor performance depends on the thickness of the CuPc layer, and the mobility increases with the increase in the CuPc layer and saturated at the thickness of 6 ML. The upper layers do not actively contribute to the carrier transport in the organic films. The morphology of the organic layer grown on the bare SiO2/Si substrate is also presented. The analysis of spatial correlations shows that the CuPc films grow on the SiO2 according to the mixed-layer mode.

High-mobility pentacene thin-film transistors with copolymer-gate dielectric

Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PNIMA-GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 10(5). In linear region (V-DS = -2V), the field-effect mobility of device increases with the increase in gate field at low-voltage region (V-G < - 20 V), and a mobility of 0.33 cm(2)/Vs can be obtained when V-G > 20 V. In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm(2)/Vs can be obtained at V-G = -95V. The influence of voltage on mobility of device was investigated.

Naphthyl end-capped quarterthiophene: A simple organic semiconductor with high mobility and air stability

An organic semiconductor that can be mass produced is synthesized by end-capping quaterthiophene with naphthyl units (NaT4). An organic thin-film transistor (OTFT, see figure) has been fabricated using this organic semiconductor, and exhibits stability under ambient conditions with a mobility of up to 0.40 cm(2) V-1 s(-1).

Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

A dinuclear aluminum 8-hydroxyquinoline complex with high electron mobility for organic light-emitting diodes

A dinuclear aluminum 8-hydroxyquinoline complex (DAlq(3)) with improved electron mobility was designed for organic light-emitting diodes. The electron mobility in DAlq(3) was determined via transient electroluminescence (EL) from bilayer devices with structure of indium tin oxide (ITO)/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidine (NPB)/DAlq(3)/Mg:Ag. It was found that the electron mobility in DAlq(3) is between 3.7-8.4x10(-6) cm(2)/Vs at electric fields ranging between 1.2x10(6) and 4.0x10(6) V/cm, which is a factor of two higher than that in Alq(3). The DAlq(3) also shows a higher EL efficiency of 2.2 cd/A (1.2 Lm/W), as compared to Alq(3) with an EL efficiency of 2.0 cd/A (1.0 Lm/W), which is attributed to more balanced electron and hole recombination due to the improved electron mobility of DAlq(3).

Charge carrier mobility and electroluminescence in a green-emitting alternating block copolymer with a methoxy Bi-substituted chromophore

We determine the mobility of positive and negative charge carriers in a soluble green-emitting alternating block copolymer with, a methoxy bi-subsbituted conjugated segment. The negative charge carrier mobility of 6 x 10(-11) cm(2)/V.s is directly determined using space-charge-limited current analytical expressions. Positive charge carrier transport is also space-charge-limited, with a mobility of I x 10(-8) cm(2)/V.s. The electron trap distribution is exponential, with a characteristic energy of similar to 0.12 eV. A hole trap with energy similar to 0.4 eV was observed. This copolymer is used as emissive material in organic light-emitting diodes that present brightness of similar to 900 cd/m(2) at 12.5 V.