125 resultados para IP masquerading


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该研究首次将复合垂直流人工湿地同池塘养殖结合,通过构建养殖-湿地生态系统,验证人工湿地对水产养殖用水和废水净化与回用的可行性。近9个月的新建人工湿地运行结果表明,水力负荷从313、469、625 mm/d增加到781mm/d,人工湿地对TSS、CODC r和BOD5去除率的变动范围分别为80.5%~82.9%、45.2%~64.2%和61.0%~77.0%,对NH4+-N、NO3--N、TN去除率的变动范围分别为51.5%~67.8%-、90.6%~40.0%和29.1%~68.6%,对TP和IP的去除率

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本文在小试规模上,研究了下行流湿地、推流床湿地、氧化塘和兼性塘四种处理单元的四种工艺组合对氮、磷的去除效果,研究结果表明:下行流湿地+氧化塘工艺组合具有较好的充氧效果,推流床湿地后置也可以提高出水的溶解氧。四种工艺组合对离子和TP、IP的去除无显著差异。人工湿地中硝化作用的发生有利于NH+4 N的去除,增加氧化塘可以提高系统的硝化能力,但同时也会增加出水中的NO-3 N浓度。

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构建湿地是 2 0世纪 70年代兴起的处理污水的生态工程 ,由于其具有建造、运行和日常管理费用低廉 ,处理效果稳定 ,且适用面广 ,越来越受到世界各国的重视。这种污水处理技术在发展中国家有着十分广泛的应用前景。本文研究与揭示了复合垂直流构建湿地基质中的磷酸酶和脲酶活性及与污水净化效果的关系 :1不同类型湿地基质酶活性不同 ,甚至不同月份的酶活性也不相同。2不同深度基质中的酶活性是不相同的。 3基质磷酸酶的活性与复合垂直流构建湿地对污水中总磷 ( TP)、无机磷 ( IP)以及化学需氧量 ( CODCr)的

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Interferons (IFNs), consisting of three major subfamilies, type I, type II (gamma) and type III (lambda) IFN, activate vertebrate antiviral defences once bound to their receptors. The three IFN subfamilies bind to different receptors, IFNAR1 and IFNAR2 for type I IFNs, IFN gamma R1 and IFN gamma R2 for type II IFN, and IL-28R1 and IL-10R2 for type III IFNs. In fish, although many types I and II IFN genes have been cloned, little is known about their receptors. In this report, two putative IFN-gamma receptor chains were identified and sequenced in rainbow trout (Oncorhynchus mykiss), and found to have many common characteristics with mammalian type II IFN receptor family members. The presented gene synteny analysis, phylogenetic tree analysis and ligand binding analysis all suggest that these molecules are the authentic IFN gamma Rs in fish. They are widely expressed in tissues, with IFN gamma R1 typically more highly expressed than IFN gamma R2. Using the trout RTG-2 cell line it was possible to show that the individual chains could be differentially modulated, with rIFN-gamma and rIL-1 beta down regulating IFN gamma R1 expression but up regulating IFN gamma R2 expression. Overexpression of the two receptor chains in RTG-2 cells revealed that the level of IFN gamma R2 transcript was crucial for responsiveness to rIFN-gamma, in terms of inducing gamma IP expression. Transfection experiments showed that the two putative receptors specifically bound to rIFN-gamma. These findings are discussed in the context of how the IFN gamma R may bind IFN-gamma in fish and the importance of the individual receptor chains to signal transduction. (c) 2009 Elsevier Ltd. All rights reserved.

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The kinetics of mucosal and serum antibody response is well as antibody secreting cells (ASCs) production were studied in large yellow croaker following vaccination with inactivated Vibrio harveyi by different routes: oral administration. intraperitoneal (IP) injection and immersion. Indirect ELISA was used to measure the antibody level in serum and cutaneous mucus, and ELISPOT was used to monitor the ASCs derived from gill, blood and head kidney. The data demonstrated that IP injection resulted in the highest antibody levels in the systemic circulation, whereas immersion induced significant antibody levels in mucous. As for the ASCs response, IP injection induced high numbers of ASCs in the head kidney and blood; oral intubation only induced a slight ASCs response in the head kidney: immersion induced a much stronger ASCs response in the gill. These results indicate that mucosal antibodies following immersion immunization are independent of a systemic response and more sensitive, since it could be triggered earlier than serum antibodies. The mucosal antibodies following IP injection immunization may depend oil a systemic immune response. The protective effects of the three vaccination methods were compared by challenging with live V. harveyi. Survival of the three groups of vaccinated fish varied front 40 to 60%. while 100% mortality was found in control fish. Compared with IP and oral vaccination, immersion stimulated higher specific antibody titers in the mucosal system and achieved similar protection, so it is in effective and efficient method for immunizing a large number of fish against V harveyi (C) 2008 Elsevier B.V. All rights reserved.

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The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.

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Positron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The different annealing ambiences convert the as-grown n-type undoped InP into two types of semi-insulating (SI) states. The positron average lifetimes of as-grown InP, PP SI-InP, and IP SI-InP are found to be 246, 251, and 243 ps, respectively, which are all longer than the bulk lifetime of 240 ps, indicating the existence of vacancy-type positron-trapping defects. For as-grown InP, VInH4 complexes are the dominant defects. They dissociate into VInHn(0less than or equal tonless than or equal to3) acceptor vacancies under PP ambience annealing, compensating the residual shallow donors and turning the material semi-insulating. In forming IP SI-InP, diffusion of iron into V-In complexes under IP ambience annealing produces the substitutional compensation defect Fe-In, causing a shorter positron average lifetime. The PICTS measurements show that a group of vacancy-type defects has been suppressed by iron diffusion during the annealing process, which is in good agreement with the PAL results. (C) 2003 American Institute of Physics.

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Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have been characterized by optical transient current spectroscopy (OTCS). Compared with the OTCS result of the SI InP prepared by annealing in pure phosphorus (PP) ambiance, the IP SI InP presents only two traps with activation energies of 0.20 and 0.63 eV, respectively. The results suggest that the diffusion of Fe-atoms suppresses the formation of a few defects in the IP SI InP. The nature of deep levels in the IP and PP SI InP has been discussed on the basis of these results. The relation between material property and defects in those SI InP has also been revealed. (C) 2002 American Institute of Physics.

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Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.

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Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

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A prominent effect of the interface potential (IP) [E. L. Ivchenko and A. Yu. Kaminski, Phys. Rev. B 54, 5852 (1996); O. Krebs and P. Voisin, Phys. Rev. Lett. 77, 1829 (1996)], the optical anisotropy of the forbidden transitions in quantum wells has been observed by reflectance-difference spectroscopy. Predictions by the heavy-light-hole coupling IP models are qualitatively consistent with all the observed features of the forbidden and the allowed transitions. The fact that the predicted value of the relative, transition strength, which depends on neither the IP strength nor the electric field, disagrees with the observed one indicates that coupling involving X and/or L bands may also be important. [S0163-1829(99)04227-7].

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社区宽带综合业务网络系统使用交换式以太网技术,在一个物理网络上为社区用户提供Internet接入、数字电视、IP电话等服务,对三网融合进行了实践性探讨。提出并实现了一套保证系统服务质量的方法,并在测试中取得了满意的效果。

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社区宽带综合业务网络系统使用交换式以太网技术。为社区用户提供Intemet接入、电视、IP电话等服务。根据系统的实际需求,提出了一种改进的DHCP中继代理机制,并将该机制在系统的核心三层交换机SW1200的驱动程序中实现。