A Study of Composite Beam with Shape Memory Alloy Arbitrarily Embedded under Thermal and Mechanical Loadings

The constitutive relations and kinematic assumptions on the composite beam with shape memory alloy (SMA) arbitrarily embedded are discussed and the results related to the different kinematic assumptions are compared. As the approach of mechanics of materials is to study the composite beam with the SMA layer embedded, the kinematic assumption is vital. In this paper, we systematically study the kinematic assumptions influence on the composite beam deflection and vibration characteristics. Based on the different kinematic assumptions, the equations of equilibrium/motion are different. Here three widely used kinematic assumptions are presented and the equations of equilibrium/motion are derived accordingly. As the three kinematic assumptions change from the simple to the complex one, the governing equations evolve from the linear to the nonlinear ones. For the nonlinear equations of equilibrium, the numerical solution is obtained by using Galerkin discretization method and Newton-Rhapson iteration method. The analysis on the numerical difficulty of using Galerkin method on the post-buckling analysis is presented. For the post-buckling analysis, finite element method is applied to avoid the difficulty due to the singularity occurred in Galerkin method. The natural frequencies of the composite beam with the nonlinear governing equation, which are obtained by directly linearizing the equations and locally linearizing the equations around each equilibrium, are compared. The influences of the SMA layer thickness and the shift from neutral axis on the deflection, buckling and post-buckling are also investigated. This paper presents a very general way to treat thermo-mechanical properties of the composite beam with SMA arbitrarily embedded. The governing equations for each kinematic assumption consist of a third order and a fourth order differential equation with a total of seven boundary conditions. Some previous studies on the SMA layer either ignore the thermal constraint effect or implicitly assume that the SMA is symmetrically embedded. The composite beam with the SMA layer asymmetrically embedded is studied here, in which symmetric embedding is a special case. Based on the different kinematic assumptions, the results are different depending on the deflection magnitude because of the nonlinear hardening effect due to the (large) deflection. And this difference is systematically compared for both the deflection and the natural frequencies. For simple kinematic assumption, the governing equations are linear and analytical solution is available. But as the deflection increases to the large magnitude, the simple kinematic assumption does not really reflect the structural deflection and the complex one must be used. During the systematic comparison of computational results due to the different kinematic assumptions, the application range of the simple kinematic assumption is also evaluated. Besides the equilibrium study of the composite laminate with SMA embedded, the buckling, post-buckling, free and forced vibrations of the composite beam with the different configurations are also studied and compared.

The microstructure and its high-temperature annealing behaviours of a-Si : O : H film

The microstructure and its annealing behaviours of a-Si:O:H film prepared by PECVD are investigated in detail using micro-Raman spectroscopy, X-ray photoelectron spectroscopy and Infrared absorption spectroscopy. The results indicate that the as-deposited a-Si:O:H film is structural inhomogeneous, with Si-riched phases surrounded by O-riched phases. The Si-riched phases are found to be nonhydrogenated amorphous silicon (a-Si) clusters, and the O-riched phases SiOx:H (x approximate to 1. 35) are formed by random bonding of Si, O and H atoms. By high-temperature annealing at 1150 degreesC, the SiOx:H (x approximate to 1.35) matrix is shown to be transformed into SiO2 and SiOx ( x approximate to 0.64), during which all of the hydrogen atoms in the film escape and some of silicon atoms are separated from the SiOx:H ( x approximate to 1.35) matrix; The separated silicon atoms are found to be participated in the nucleation and growth processes of solid-phase crystallization of the a-Si clusters, nano-crystalline silicon (ne-Si) is then formed. The microstructure of the annealed film is thereby described with a multi-shell model, in which the ne-Si clusters are embedded in SiOx (x = 0.64) and SiO2. The former is located at the boundaries of the nc-Si clusters, with a thickness comparable with the scale of nc-Si clusters, and forms the transition oxide layer between the ne-Si and the SiO2 matrix.

Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration

Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.

High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD

The high temperature (300～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.

High temperature annealing behaviors of luminescent SIOx : H films

The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170 degrees C annealed films. The dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (E-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (E-g - h nu), indicating that nano-Si embedded in SiO2 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.

Lanthanide complex/polymer composite optical resin with intense narrow band emission, high transparency and good mechanical performance

Novel composite resins possessing good luminescent properties have been synthesized through a free radical copolymerization of styrene, alpha-methylacrylic acid and the binary or ternary complexes of lanthanide ions (Eu3+ and Tb3+). These polymer-based composite resins not only possess good transparency and mechanical performance but also exhibit an intense narrow band emission of lanthanide complexes under UV excitation. We characterized the molecular structure, physical and mechanical performance, and luminescent properties of the composite resins. Spectra investigations indicate that alpha-methyl-acrylic acid act as both solubilizer and ligand. Photoluminescence measurements indicate that the lanthanide complexes show superior emission lines and higher intensities in the resin matrix than in the corresponding pure complex powders, which can be attributed to the restriction of molecular motion of complexes by the polymer chain networks and the exclusion of water molecules from the complex. We also found that the luminescence intensity decreased with increasing content of alpha-methylacrylic acid in the copolymer system. The lifetime of the lanthanide complexes also lengthened when they were incorporated in the polymer matrix. In addition, we found that the relationships between emission intensity and Tb (Eu) content exhibit some extent of concentration quenching.

Structure characteristics and valence state study for La1-xNaxTiO3 synthesized under high-pressure and high-temperature conditions

By using a novel high-pressure, high-temperature method, perovskite oxides of La1-xNaxTiO3 (x = 0.05, 0.1-0.8) with mixed valence state were synthesized. XRD analysis shows a cubic cell for the samples. Cell volumes of the samples with 0.1 less than or equal to x less than or equal to 0.5 decreases as x increases, and the cell Volume for x = 0.05 is smaller than that for x = 0.1. XPS of surface and EPR measurements indicate that Ti ions are of mixed valence of +3 and +4 and that A-cations vacancies exist in the samples. As x increases, the amount of Ti3+ ions decreases and the amount of A-cations vacancies increases. The valence state of Ti ions can be altered by changing both pressure and temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

An eigenfunction expansion-variational method in prediction of the transverse thermal conductivity of fiber reinforced composites considering interfacial characteristics

An eigenfunction expansion-variational method based on a unit cell is developed to deal with the steady-state heat conduction problem of doubly-periodic fiber reinforced composites with interfacial thermal contact resistance or coating. The numerical results show a rapid convergence of the present method. The present solution provides a unified first-order approximation formula of the effective thermal conductivity for different interfacial characteristics and fiber distributions. A comparison with the present high-order results, available experimental data and micromechanical estimations demonstrates that the first-order approximation formula is a good engineering closed-form formula. An engineering equivalent parameter reflecting the overall influence of the thermal conductivities of the matrix and fibers and the interfacial characteristic on the effective thermal conductivity, is found. The equivalent parameter can greatly simplify the complicated relation of the effective thermal conductivity to the internal structure of a composite. (c) 2010 Elsevier Ltd. All rights reserved.

Effect of diffusion barrier on the high-temperature oxidation behavior of thermal barrier coatings

A selective oxidation technique has been applied to form a diffusion barrier on the Ni-based superalloy substrate by heating the substrate with electron beam of the electron beam-physical vapor deposition (EB-PVD) facility. The interdiffusion behavior, cross-sectional morphology, isothermal and cyclic oxidations were studied for thermal barrier coatings (TBCs) with and without diffusion barrier.

Permeation of nitrogen and water vapor through sulfonated polyetherethersulfone membrane

The novel polyetherethersulfone (PES-C) prepared from phenol-phthalein in our institute is an amorphous, rigid, tough material with good mechanical properties over a wide temperature range. To improve its water vapor permeability for the application of gas drying, the PES-C was sulfonated with concentrated sulfuric acid and transferred in sodium, cupric, and ferric salt forms. The sulfonation degree can be regulated by controlling the temperature and reaction time. Characterization of sulfonated PES-C in sodium form was made by IR. Some properties of the sulfonated PES-C, such as solubility, glass transition temperature, thermal stability, mechanical properties, and transport properties to nitrogen and water vapor have also been discussed. (C) 1997 John Wiley & Sons, Inc.

Sulfonation of polyetheretherketone and its effects on permeation behavior to nitrogen and water vapor

The novel polyetheretherketone (PEK-C) prepared from phenolphthalein in our institute is an amorphous, rigid, tough material with good mechanical properties over a wide temperature range. To improve its water vapor permeability for the application of gas drying, PEK-C was sulfonated with concentrated sulfuric acid and transferred in sodium, cupric, and ferric salt forms. Sulfonation degree can be regulated by controlling the temperature and reaction time. Characterization of sulfonated PEK-C in sodium form was made by infrared spectroscopy. Some properties of the sulfonated PEK-C, such as solubility, glass transition temperature, thermal stability, mechanical properties, and transport properties to nitrogen and water vapor, are also discussed. (C) 1996 John Wiley & Sons, Inc.

Research Progress On Thermal Protection Materials And Structures Of Hypersonic Vehicles

Hypersonic vehicles represent future trends of military equipments and play an important role in future war. Thermal protection materials and structures, which relate to the safety of hypersonic vehicles, are one of the most key techniques in design and manufacture of hypersonic vehicles. Among these materials and structures, such as metallic temperature protection structure, the temperature ceramics and carbon/carbon composites are usually adopted in design. The recent progresses of research and application of ultra-high temperature materials in preparation, oxidation resistance, mechanical and physical characterization are summarized.