Solvent extraction of scandium(III), yttrium(III), lanthanides(III), and divalent metal ions with sec-nonylphenoxy acetic acid

Such physicochemical properties of sec-nonylphenoxy acetic acid (CA-100) as the solubility in water, acid dissociation constant in water, dimerization constant in heptane, and distribution constant in organic solvent-water were measured by two-phase titration. The extraction behaviors of scandium (III), yttrium (III), lanthanides (III), and divalent metal ions from hydrochloric acid solutions with CA-100 in heptane have been investigated, and the possibilities of separating scandium (yttrium) from lanthanides and divalent metal ions have been carefully discussed. The stoichiometries of the extracted metal complexes were investigated by the slope-analysis technique. The effect of the nature of diluent on the extraction of yttrium (III) with CA100 has been studied and correlated with the dielectric constant.

In situ analysis of electropolymerization of aniline by combined electrochemistry and surface plasmon resonance

The combination of electrochemistry with surface plasmon resonance (SPR) has been used to characterize the growth of polyaniline (PAn) on a gold electrode surface during potential cycling. Potential-modulated SPR characteristics of the PAn film were also revealed. The potential switch between the oxidized and reduced states of PAn can lead to a large change of SPR response due to the variation in the imaginary part of the dielectric constant of PAn film resulting from the transition of the film in conductivity. The redox transition of the PAn film during potential cycling is very profitable to the SPR measurements. Two modes of SPR measurement, SPR angular scan (R-theta) and the time evolution of the reflectivity change at a fixed angle (R-t), were displayed to study the growth process of the PAn film. The angle shift of the resonance minimum recorded at each cathodic limit of cyclic potential scanning allows for the unambiguous measurement of the film growth. During cyclic potential scanning, the R-t curve was repeatedly modulated with the direction of the potential ramp as a result of the redox switch of the PAn film, and the amplitude of potential-modulated reflectivity change was well correlated with the cyclic number. The time differential of the R-t curve permits continuous monitoring of the film growth process. These results illustrate that the combined technique is suitable for studying the electropolymerization process of a conducting polymer.

A novel electrochemical SPR biosensor

In this paper, we demonstrate for the first time that upon electrochemical oxidation/reduction, the transition in the conductivity of polyaniline (PAn) film on gold electrode surface leads to a large change of surface plasmon resonance (SPR) response due to a change in the imaginary part of dielectric constant of PAn film. Based on the amplifying response of SPR to the redox transformation of PAn film as a direct result of the enzymatic reaction between horseradish peroxidase (HRP) and PAn in the presence of H2O2, a novel PAn-mediated HRP sensor has been fabricated. The electrochemical SPR biosensor, unlike a usual binding assay with SPR, can afford a larger SPR response, and can also be reused by reducing the PAn film electrochemically to its reduced state. This method opens up a new route to the fabrication of SPR biosensor. (C) 2001 Elsevier Science BN. All rights reserved.

The effect of substrate and solvent properties on the response of an organic phase tyrosinase electrode

The responses of a cryohydrogel tyrosinase enzyme electrode to four substrates in three pure water immiscible organic solvents were investigated. Kinetic parameters, the maximum kinetic current, I-max, the apparent Michaelis-Menten constant, K-m(app), and I-max/K-m(app), were calculated. The I-max/K-m(app) value was taken as an indicator of the catalytic efficiency of the sensor. The effect of the substrate hydrophobicity on I-max/K-m(app) and response time of the sensor were discussed. The effects of both hydrophobicity (log P) and dielectric constant (epsilon) of the organic solvent on the catalytic efficiency of the enzyme in the organic phase were studied. (C) 1997 Elsevier Science S.A.

Bond-charge calculation of electro-optic coefficients of diatomic crystals

A theoretical method has been set up to calculate the electrooptic tensor coefficients r(ijk), based on the Phillips-Van Vechten (PV) dielectric theory and the Levine bond charge model, Starting from the crystal structure data and only introducing the experimentally determined optical permittivity and dielectric constant, the electro-optic tensor coefficients r(ijk) can be quantitatively predicted, The theoretical calculations are in good agreement with experiment in the case of zinc blende and wurtzite crystals, For zinc blende crystals, the effects of covalent radii on the linear electro-optic coefficients are discussed. (C) 1997 Academic Press.

A microwave emissivity model of sea surface under wave breaking

With the effective medium approximation theory of composites, a remedial model is proposed for estimating the microwave emissivity of sea surface under wave breaking driven by strong wind on the basis of an empirical model given by Pandey and Kakar. In our model, the effects of the shapes of seawater droplets and the thickness of whitecap layer (i.e. a composite layer of air and sea water droplets) over the sea surface on the microwave emissivity are investigated by calculating the effective dielectric constant of whitecaps layer. The wind speed is included in our model, and the responses of water droplets shapes, such as sphere and ellipsoid, to the emissivity are also discussed at different microwave frequencies. The model is in good agreement with the experimental data of microwave emissivity of sea surface at microwave frequencies of 6.6, 10.7 and 37GHz.

Application of effective medium approximation theory to ocean remote sensing under wave breaking

Based on the effective medium approximation theory of composites, the empirical model proposed by Pandey and Kakar is remedied to investigate the microwave emissivity of sea surface under wave breaking driven by strong wind. In the improved model, the effects of seawater bubbles, droplets and difference in temperature of air and sea interface (DTAS) on the emissivity of sea surface covered by whitecaps are discussed. The model results indicate that the effective emissivity of sea surface increases with DTAS increasing, and the impacts of bubble structures and thickness of whitecaps layer on the emissivity are included in the model by introducing the effective dielectric constant of whitecaps layer. Moreover, a good agreement is obtained by comparing the model results with the Rose's experimental data.

Influence of biofilms growth on corrosion potential of metals immersed in seawater

The changes of corrosion potential (E-corr) of metals immersed in seawater were investigated with electrochemical technology and epifluoresence microscopy. In natural seawater, changes of E-corr were determined by the surface corrosion state of the metal. E-corr of passive metals exposed to natural seawater shifted to noble direction for about 150 mV in one day and it didn't change in sterile seawater. The in-situ observation showed that biofilms settled on the surfaces of passive metals when E-corr moved in noble direction. The bacteria number increased on the metal surface according to exponential law and it was in the same way with the ennoblement of E-corr. The attachment of bacteria during the initial period played an important role in the ennoblement of E-corr and it is believed that the carbohydrate and protein in the biofilm are reasons for this phenomenon. The double layer capacitance (C-dl) of passive metals decreased with time when immersed in natural seawater, while remained almost unchanged in sterile seawater. The increased thickness and reduced dielectric constant of C-dl may be reasons.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Characteristics of high reflection mirror with an SiO2 top layer for multilayer dielectric grating

The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

Development of high-k gate dielectric materials

The traditional gate dielectric material Of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and obtained great progress. In this paper, the developments of high-K gate materials were reviewed. Based on the author's background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal gate electrode were introduced in detail.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

High-mobility pentacene thin-film transistors with copolymer-gate dielectric

Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PNIMA-GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 10(5). In linear region (V-DS = -2V), the field-effect mobility of device increases with the increase in gate field at low-voltage region (V-G < - 20 V), and a mobility of 0.33 cm(2)/Vs can be obtained when V-G > 20 V. In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm(2)/Vs can be obtained at V-G = -95V. The influence of voltage on mobility of device was investigated.

Dielectric responses of anisotropic graded granular composites having arbitrary inclusion shapes

The transformation field method (TFM) originated from Eshelby's transformation field theory is developed to estimate the effective permittivity of an anisotropic graded granular composite having inclusions of arbitrary shape and arbitrary anisotropic grading profile. The complicated boundary-value problem of the anisotropic graded composite is solved by introducing an appropriate transformation field within the whole composite region. As an example, the effective dielectric response for an anisotropic graded composite with inclusions having arbitrary geometrical shape and arbitrary grading profile is formulated. The validity of TFM is tested by comparing our results with the exact solution of an isotropic graded composite having inclusions with a power-law dielectric grading profile and good agreement is achieved in the dilute limit. Furthermore, it is found that the inclusion shape and the parameters of the grading profile can have profound effect on the effective permittivity at high concentrations of the inclusions. It is pointed out that TFM used in this paper can be further extended to investigate the effective elastic, thermal, and electroelastic properties of anisotropic graded granular composite materials.