新一代多电荷态离子源的研究

离子源发展存在两大热点问题：其一强流高电荷态离子的产生；其二强流金 属离子的产生。为了获得强流高电荷态离子，我们设计制造了全超导 ECR 离子 源 SECRAL（Superconducting ECR ion source with Advanced design in Lanzhou） ， 该离子源采用了全新的超导磁体结构形式，工作于 18～28GHz 的微波频率。根据 scaling laws 和实验经验，我们确定了 SECRAL 离子源所需要的约束磁场场形， 并针对新的磁体结构设想，通过 TOSCA 程序进行了详细的计算，成功地设计出 满足我们场形要求的超导磁体物理模型。据此，我们进一步进行了超导磁体的力 学结构分析，为磁体机械工艺设计提供了参考依据，保证了超导磁体结构设计的 可靠性。源体建成后，经过一系列的测试和调束实验，不但验证了我们的设计和 分析是合理的、可靠的，而且创造了许多项束流调试的新世界纪录，我们分别获 得了 810 A eμ O7+ 、730 A eμ Ar 11+ 、220 A eμ Ar 14+ 、73 A eμ Ar 16+ 、483 A eμ Xe 20+ 等束 流。为了获得强流中低电荷态金属离子束，我们尝试探索一种原理、结构、工作 模式全新的离子源－外部电子注入PIG离子源（E-PIG） 。目前，我们基本按照我 们的初期设想设计建造了 E-PIG离子源，设计中采用了外部电子枪注入电子、空 心阴极、特殊的场形等手段来提高金属离子的电荷态和流强。经过初步的起弧调 试，我们发现在初期的设计中还存在一些问题亟待进一步整改。

Effects of magnetic configuration on hot electrons in highly charged ECR plasma

To investigate the hot electrons in highly charged electron cyclotron resonance (ECR) plasma, Bremsstrahlung radiations were measured on two ECR ion sources at the Institute of Modern Physics. Used as a comparative index of the mean energy of the hot electrons, a spectral temperature, Tspe, is derived through a linear fitting of the spectra in a semi-logarithmic representation. The influences of the external source parameters, especially the magnetic configuration, on the hot electrons are studied systematically. This study has experimentally demonstrated the importance of high microwave frequency and high magnetic field in the electron resonance heating to produce a high density of hot electrons, which is consistent with the empirical ECR scaling laws. The experimental results have again shown that a good compromise is needed between the ion extraction and the plasma confinement for an efficient production of highly charged ion beams. In addition, this investigation has shown that the correlation between the mean energy of the hot electrons and the magnetic field gradient at the ECR is well in agreement with the theoretical models.中文摘要：ECR(电子回旋共振)离子源是产生稳定的强流多电荷态离子束流最有效装置。全永磁 ECR 离子源因其独特的特点为很多中小型多电荷态离子束流实验平台与离子注入机等系统所采用，为后者产生重复性好、稳定性强的多电荷态离子束流。本文着重论述了中国科学院近代物理研究所研制的几台全永磁多电荷态ECR离子源及其特性与典型性能，如能产生强流高电荷态离子束流的高性能全永磁离子源LAPECR2，能产生强流中低电荷态离子束流的LAPECR1，能产生多电荷态重金属离子束流的LAPECR1-M等。这些性能稳定的离子源为提高近代物理研究所相关试验平台的性能提供了关键的束流品质保障。

Bioactivity of Mg-ion-implanted zirconia and titanium

Titanium and zirconia are bioinert materials lacking bioactivity. In this work, surface modification of the two typical biomaterials is conducted by Mg-ion-implantation using a MEVVA ion source in an attempt to increase their bioactivity. Mg ions were implanted into zirconia and titanium with fluences ranging from 1 x 10(17) to 3 x 10(17) ions/cm(2) at 40 keV. The Mg-implanted samples, as well as control (unimplanted) samples, were immersed in SBF for 7 days and then removed to identify the presence of calcium and phosphate (Ca-P) coatings and to characterize their morphology and structure by SEM, XRD, and FT-IR. SEM observations confirm that globular aggregates are formed on the surfaces of the Mg-implanted zirconia and titanium while no precipitates are observed on the control samples. XRD and FT-IR analyses reveal that the deposits are carbonated hydroxyapatite (HAp). Our experimental results demonstrate that Mg-implantation improves the bioactivity of zirconia and titanium. Further, it is found that the degree of bioactivity is adjustable by the ion dose. Mechanisms are proposed to interpret the improvement of bioactivity as a result of Mg implantation and the difference in bioactivity between zirconia and titanium. (c) 2006 Elsevier B.V. All rights reserved.

ECR plasma in growth of cubic GaN by low pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs (001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (similar to600degreesC) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity,coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.

CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM

A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and for the growth of metastable compounds has been constructed and tested. The system consists of two mass-resolved low-energy ion beams which merge at the target with an incident energy range 50-25 000 eV. Each ion beam uses a Freeman ion source for ion production and a magnetic sector for mass filtering. While a magnetic quadrupole lens is used in one beam for ion optics, an electrostatic quadrupole lens focuses the other beam. Both focusing approaches provide a current density more than 100-mu-A/cm2, although the magnetic quadrupole gives a better performance for ion energies below 200 eV. The typical current of each beam reaches more than 0.3 mA at 100 eV, with a ribbon beam of about 0.3-0.5 x 2 cm2. The target is housed in an ultrahigh vacuum chamber with a base pressure of 1 x 10(-7) Pa and a typical pressure of 5 x 10(-6) Pa when a noncondensable beam like argon is brought into the chamber. During deposition, the target can be heated to 800-degrees-C and scanned mechanically with an electronic scanning control unit. The dual beam system has been used to grow GaN using a Ga+ and a N+ beam, and to study the oxygen and hydrogen ion beam bombardment effects during carbon ion beam deposition. The results showed that the simultaneous arrival of two beams at the target is particularly useful in compound formation and in elucidation of growth mechanisms.

Emittance estimation by an ion optical element with variable focusing strength and a viewing target

The emittance of an extracted ion beam can be estimated to first order by a series of three linear independent profile measurements. This estimation is restricted to the evaluation of an upper limit of the emittance value for a homogeneous, nonfilamented beam. The beam is assumed to be round, respectively elliptical, without any structure of the intensity distribution, no space charge has been assumed for the drifting beam, and the optics is assumed to be linear. Instead of using three different drift sections, a linear focusing element with three different focusing strengths can be used. Plotting the beam radius as function of focusing strength, three independent solutions can be used to calculate the Twiss parameters alpha, beta, and gamma and furthermore the emittance epsilon. Here we describe the measurements which have been performed with the SECRAL ion source at Institute of Modern Physics Lanzhou.

Production of highly charged ion beams with SECRAL

Superconducting electron cyclotron resonance ion source with advanced design in Lanzhou (SECRAL) is an all-superconducting-magnet electron cyclotron resonance ion source (ECRIS) for the production of intense highly charged ion beams to meet the requirements of the Heavy Ion Research Facility in Lanzhou (HIRFL). To further enhance the performance of SECRAL, an aluminum chamber has been installed inside a 1.5 mm thick Ta liner used for the reduction of x-ray irradiation at the high voltage insulator. With double-frequency (18+14.5 GHz) heating and at maximum total microwave power of 2.0 kW, SECRAL has successfully produced quite a few very highly charged Xe ion beams, such as 10 e mu A of Xe37+, 1 e mu A of Xe43+, and 0.16 e mu A of Ne-like Xe44+. To further explore the capability of the SECRAL in the production of highly charged heavy metal ion beams, a first test run on bismuth has been carried out recently. The main goal is to produce an intense Bi31+ beam for HIRFL accelerator and to have a feel how well the SECRAL can do in the production of very highly charged Bi beams. During the test, though at microwave power less than 3 kW, more than 150 e mu A of Bi31+, 22 e mu A of Bi41+, and 1.5 e mu A of Bi50+ have been produced. All of these results have again demonstrated the great capability of the SECRAL source. This article will present the detailed results and brief discussions to the production of highly charged ion beams with SECRAL.

The Compact Pulsed Hadron Source: A Design Perspective

During the past. decades, large-scale national neutron sources have been developed in Asia, Europe, and North America. Complementing such efforts, compact hadron beam complexes and neutron sources intended to serve primarily universities and industrial institutes have been proposed, and some have recently been established. Responding to the demand in China for pulsed neutron/proton-beam platforms that are dedicated to fundamental and applied research for users in multiple disciplines from materials characterization to hadron therapy and radiography to accelerator-driven sub-critical reactor systems (ADS) for nuclear waste transmutation, we have initiated the construction of a compact, yet expandable, accelerator complex-the Compact Pulsed Hadron Source (CPHS). It consists of an accelerator front-end (a high-intensity ion source, a 3-MeV radio-frequency quadrupole linac (RFQ), and a 13-MeV drift-tube linac (DTL)), a neutron target station (a beryllium target with solid methane and room-temperature water moderators/reflector), and experimental stations for neutron imaging/radiography, small-angle scattering, and proton irradiation. In the future, the CPHS may also serve as an injector to a ring for proton therapy and radiography or as the front end to an ADS test facility. In this paper, we describe the design of the CPHS technical systems and its intended operation.

ECR离子源及其引出系统

本论文第一部分主要描述 GCR（电子回旋共振）离子源的现状、发展和ECR离子源的重要物理机制。在此基础上，着重在于介绍我参加安装和调试的 2.45GHz 全永磁单电荷态 ECR 离子源和 14.5GHz 高电荷电荷态 ECR 离子源的结构、磁场场型、引出系统、微波系统、性能和调试结果，并简要介绍某些金属离子的产生方法。第二部分首先介绍了离子源引出系统的要求、离子源引出系统的分类、衡量出了系统好坏的各参数。其次阐述了 ECR 离子源引出系统的基本原理。然后给出了 14.5GHz 高电荷态 ECR 离子源的引出实验结果、模拟计算结果和它的引出系统结构，并设计了一套适合于 14.5GHz 高电荷态 ECR 离子源的三电极引出系统。最后，给出了 2.45GHz 单电荷态 ECR 离子源的引出系统设计和它的实验结果。

高电荷态ECR离子源的设计与实验研究

本文详细论述了三种各具特色的高电荷态ECR离子源的设计与研制，它们分别是：14．SGHz全永磁高电荷态ECR离子源LAPEC咫、传统常温ECR离子源GTS、混和超导ECR离子源HECRIS。另外，还从理论与实验两个方面对ECR离子源多电荷态离子束流的引出进行了详细研究。设计研制了一台高性能14．SGHz全永磁ECR离子源LAPECRZ，该离子源的设计尺寸为杯50mm*560mm，重量可达9ookg以上，为目前世界上体积与重量最大、设计参数最高的全永磁ECR离子源。全永磁离子源的尺寸增大一些，其加工与研制所存在的难度将会有质的变化。研制LAPEC形所存在的技术难度大大超过了以往所有全永磁ECR离子源。LAPECR2的磁场参数为：注入磁场1 ．4T，如果加注入端辅助铁扼，磁场可达2．6T；引出磁场为1 ．1T；六极永磁体在弧腔内壁产生的最大径向磁场的设计值为1．22T，实际加工得到的磁场大小为1．2T，与计算结果基本一致。该离子源的设计采用了多种特殊技术与方法以提高引出高电荷态离子束流强度，如：双层含铝衬底的等离子体弧腔、铝制等离子体电极、冷阴极电子枪（注入端负偏压电极）、旁轴微波直接馈入与等离子体位置相对于磁场可调等等。目前，我们已开始源体的组装。GTS离子源为目前世界上运行性能最好的常温ECR离子源之一。它的设计指导思想是ECR离子源的经验结论scaling Laws，高磁场、高磁镜比，高磁场梯度是该离子源磁场设计的主要特点。设计时充分考虑了多频加热机制，允许多频功率同时馈入弧腔：IOGHz＋14GHz＋18GHz＋ZSGHz。良好的磁场约束、灵活的磁场结构设计、高频率大功率微波馈入、大体积弧腔、足够的冷二次电子注入、优良的真空抽气系统、以及有效的束流引出系统等等都是该离子源高性能表观的原因。经过近一年半的优化与调试，该离子源运行性能优良，能产生很多领先国际伺类ECR源的离子束流，如：1.95emAO6+，O·semAArll”，o．15e拜AArl犷，31Oe瘩建叙e，哪se拼A豁岁”与0.4eμAXe39+为18GHz时调试的结果：1.OemAAr8+，1.8eμAAr17+24OeμAXe20+ ，20eμAxe30+与0.3oe从Axe38＋为在14GHz调试的最好结果。该离子源已多次为原子物理实验提供了Ar17+与Ar18+等高电荷态离子束流。HECRIS是一台高性能混和超导ECR离子源，其各项设计参数均高于GTS源，以保证该离子源能具有比GTS更好的性能。它的最小B场型设计继续沿袭现在ECR离子源设计惯用的Scaling Laws设计思想。该离子源采用较高频率的微波馈入，设计运行范围为18GHz-24GHz。该离子源着重于在运行调试中实现对轴向最小磁场Bmin的调节与匹配，这里采用两组超导线包进行辅助调节。径向磁约束由一个能在弧腔内壁产生1．6T径向磁场的六极永磁体提供，它强磁场设计与部分磁块存在的退磁问题的解决也是该离子源的一大特点与难点。文中还详细讨论一个高性能的Halbach结构六极永磁体的设计方法。分别从永磁材料选取、物理尺寸优化、结构选择等角度，结合理论分析与PolssON，PERMAG和TOscA3D程序的模拟计算结果，对六极永磁体的性能进行了全面的分析，提出两种确定六极永磁体中存在退磁磁块的办法，并且提出了一种用高极化矫顽力永磁材料替代退磁磁块中所采用的永磁材料的解决办法。对多电荷态ECR离子源的引出进行了理论与实验两方面的研究。利用PBGUNS程序，对ECR离子源的引出系统进行了一定的理论分析。通过模拟计算，详细地论述了引出系统的各主要物理参数对ECR离子源引出离子束流品质的影响。这些得到的结果，对设计一套高性能的ECR离子源引出系统具有一定的指导意义。结合理论分析，我们还设计完成了一系列关于ECR离子源引出系统的实验，来研究多电荷态离子束流的引出与短距离传输。采用电扫描发射度测量系统（ESS）探测离子束流在x与y方向的发射度，用两个荧光靶分别在束运线不同位置探测束流的束斑形状，并利用一个亮度探测器对束斑相对亮度进行探测。通过多组实验结果的处理，分别分析了离子源的几个主要参数如磁场、微波、掺气、偏压等对引出束流品质的影响并结合相关理论给予了解释，通过对混合多电荷态离子束流的三电极引出实验结果的讨论，建立了一个关于高电荷态ECR离子源束流引出的较为清晰的物理图象。

Gas-phase ion - Molecule reactions of neutral C-60 with the plasmas of alkyl methyl ethers and primary alcohols

The gas-phase ion-molecule reactions of C-60 with the methoxymethyl ion [CH3O=CH2](+) and the 1-hydroxyethyl ion [CH3CH=OH](+) generated under the self-chemical-ionization (self-CI) conditions of alkyl methyl ethers and primary alcohols were studied in the ion source of a mass spectrometer. The adduct ions [C60C2H5O](+) and protonated molecules [C60H](+) were observed as the major products of C-60 with the plasma of alkyl methyl ethers. On the contrary, the reactions of C-60 With the plasmas of primary alcohols produced few corresponding adduct ions. The AM1 semiempirical molecular orbital calculations were carried out on 14 possible structures. The calculated results showed that the most stable structure among the possible isomers of [C60C2H5O](+) is the [3+2] cycloadduct. According to experimental and theoretical results, the pathway for the formation of the adduct was presented.

Gas-phase ion-molecule reactions of C-60 with methyl ethers CH3OCnH2n+1

Gas-phase ion-molecule reactions of buckminsterfullerene (C-60) with the ion systems generated from the self-chemical-ionization of alkyl methyl ethers(CH3OCnH2n+1, n =2 , 3, 4) were studied in the ion source of a mass spectrometer. The adduct cation [C60C2H5O](+) and protonated molecular ion [C60H](+) were observed as the major products, The former was produced by the reactions.of C-60 with the methoxymethyl ion [CH3O = CH2](+) , the latter corresponded to the proton transfer reactions from the protonated alkyl methyl ethers to C60 It is suggested that the [3+2] cycloadduct is the most favorable structure among the probable isomers with special chemical properties, Our investigation provides the guidance for the synthesis of this compound in condensed phase.

Gas-phase ion-molecule reactions of neutral C-60 with alkyl methyl ethers under chemical ionization conditions

Gas-phase ion-molecule reactions of buckminsterfullerene (C-60) with the ion systems generated from the self-chemical ionization of alkyl methyl ethers (CH3OR, R = n-C2H5, n-C3H7, n-C4H9) were studied in the ion source of a mass spectrometer. The adduct cation [C60C2H5O](+) and protonated molecule [C60H](+) were observed as the major products. The former adduct ion was produced by the reactions of C-60 with the methoxymethyl ion [CH3OCH2](+), and the latter resulted from the proton transfer reactions from protonated alkyl methyl ethers to C-60 It is suggested that the [3+2] cycloadduct to a 6-6 bond of C-60 (a C-C bond common to two annulated six-membered rings) is the most favorable structure among the probable isomers of [C60C2H5O](+). (C) 1998 John Wiley & Sons, Ltd.

Gas phase derivations of endohedral metallofullerenes by ion-molecular reactions

Gas phase ion-molecular reactions of endohedral metallofullerenes with the self-chemical ionization ion system of vinyl acetate, benzene and acetone in the ion source of the mass spectrometer have been studied. Several derivatized endohedral metallofullerene cations [M@C-82-C2H3O](+), [M-2@C-80-C2H3O](+), [M@C-82-C6H6](+) and [M@C-82-CO-CH3](+) are observed as the major products. The experimental results indicate that endohedral metallofullerenes have active gas phase reactivities and can be efficiently derivatized by some small organic cations.

Gas-phase ion-molecule reactions of C-60 and theoretical studies of [C60C2H3O](+) adduct cations

Gas-phase ion-molecule reactions of buckminsterfullerene (C-60) with the acetyl cation CH3-C-+=O (m/z 43) and formylmethyl cation (CH2)-C-+-CH=O (m/z 43, or oxiranyl cation), generated from the self-chemical ionization of acetone and vinyl acetate, respectively, were studied in the ion source of a mass spectrometer. Adduct cations [C60C2H3O](+) (m/z 763) and protonated C-60, [C60H](+) (m/z 721), were observed as the major products. AM1 semiempirical molecular orbital calculations on the possible structures, stabilities and charge locations of the isomers of the adducts [C60C2H3O](+) were carried out at the restricted Hartree-Fock level. The results indicated that the sigma-addition product [C-60-COCH3](+) is the most stable adduct for the reaction of C-60 with CH3-C-+=O rather than that resulting from the [2+2] cycloaddition. The [2+3] cycloadduct and the sigma-adduct [C60CH2CHO](+) might be the most possible coexisting products for the reactions of C-60 with (CH2)-C-+-CH=O or oxiranyl cation. Other [C60C2H3O](+) isomers are also discussed. (C) 1997 by John Wiley & Sons, Ltd.