近壁湍流脉动的概率分布函数

采用大涡模拟方法，模拟槽道湍流，获得了不同雷诺数情形下的槽道流大涡模拟数据库．在此基础上，获得了流向和垂向脉动速度的概率分布函数，并运用假设检验，分析了其与正态分布的定量差别．进一步计算了流向和垂向脉动速度的偏斜度、平坦度，讨论了二者在粘性子层、过渡区和对数律区的变化．同时，讨论了粘性子层、过渡区和对数律区流向和垂向脉动速度概率分布函数的特点及其与湍流猝发的高速流下扫和低速流喷发事件的关系．最后，分析了雷诺数对流向、垂向脉动速度分布的影响。

双晶晶界在高温下的热稳定性的分子动力学研究

晶界结构在高温下的热稳定性问题是一个长期争论而又未能解决的问题，其争论的焦点是：在远低于熔点的温度下，晶界结构是否发生了可观察到的无序化，即是否存在一个远低于熔点的结构转化温度。为了能澄清这一争论，本文系统地研究了晶界结构的热稳定性。为了消除相互作用势的影响和系统误差，本文首先采用Morse势和经验多体势分别对铝、铜单晶的熔化过程进行了分子动力学模拟。在平衡态下，通过计算表征结构无序化的静态结构因子、径向分布函数和单晶原子位形图，获得了铝、铜单晶的熔点，结果表明：多体势计算的铝和铜的单晶熔点更接近实验值。因此，采用经验多体势应用分子动力学方法分别模拟了铝、铜Σ3、Σ5、Σ9、Σ11、Σ19、Σ33六种对称倾侧双晶晶界晶界结构由有序向无序转化的过程，计算了平衡态下的表征结构无序化的静态结构因子、径向分布函数和晶界原子位形图并将多体势获得的铝、铜单晶熔点作为晶界结构转化温度的约化熔点，获得了铝、铜Σ3、Σ5、Σ9、Σ11、Σ19、Σ33六种对称倾侧双晶晶界结构的转化温度和熔点，结果表明：1．Σ5、Σ9、Σ11、Σ19、Σ33五种对称倾侧双晶晶界均在远低于单晶熔点温度时，晶界结构发生了可观察到的无序化，而且双晶晶界结构的转变温度相差不大，双晶晶界熔点也低于单晶熔点。2．Σ3晶界在温度远低于熔点时，其晶界结构没有发生可观察到的无序化；Σ3晶界的转化温度与单晶熔点接近。所以，可以认为Σ3晶界不存在转化温度。这是由于Σ3晶界为共格孪晶，具有较低的能量。综上所述，除Σ3共格孪晶外，在远低于熔点温度下，晶界结构发生了可观察到的无序化，即：存在一个远低于熔点的转化温度，此时其静态结构因子约为0.5左右；晶界结构的熔点均低于单晶熔点，此时其静态结构因子约为0.15左右。从全文模拟结果可以看出，静态结构因子、径向分布函数、晶界原子位形图三种方法在确定晶界的结构转化温度和熔点时，静态结构因子是最有效、最准确的定量方法。

Large-eddy simulation of turbulent collision of heavy particles in isotropic turbulence

The small-scale motions relevant to the collision of heavy particles represent a general challenge to the conventional large-eddy simulation (LES) of turbulent particle-laden flows. As a first step toward addressing this challenge, we examine the capability of the LES method with an eddy viscosity subgrid scale (SGS) model to predict the collision-related statistics such as the particle radial distribution function at contact, the radial relative velocity at contact, and the collision rate for a wide range of particle Stokes numbers. Data from direct numerical simulation (DNS) are used as a benchmark to evaluate the LES using both a priori and a posteriori tests. It is shown that, without the SGS motions, LES cannot accurately predict the particle-pair statistics for heavy particles with small and intermediate Stokes numbers, and a large relative error in collision rate up to 60% may arise when the particle Stokes number is near St_K=0.5. The errors from the filtering operation and the SGS model are evaluated separately using the filtered-DNS (FDNS) and LES flow fields. The errors increase with the filter width and have nonmonotonic variations with the particle Stokes numbers. It is concluded that the error due to filtering dominates the overall error in LES for most particle Stokes numbers. It is found that the overall collision rate can be reasonably predicted by both FDNS and LES for St_K>3. Our analysis suggests that, for St_K<3, a particle SGS model must include the effects of SGS motions on the turbulent collision of heavy particles. The spectral analysis of the concentration fields of the particles with different Stokes numbers further demonstrates the important effects of the small-scale motions on the preferential concentration of the particles with small Stokes numbers.

Exact solutions to collisionless external gas flows

This paper presents exact density, velocity and temperature solutions for two problems of collisionless gas flows around a flat plate or a spherical object. At any point off the object, the local velocity distribution function consists of two pieces of Maxwellian distributions: one for the free stream which is characterized by free stream density, temperature and average velocity, n0, T0, U0; and the other is for the wall and it is characterized by density at wall and wall temperature, nw,Tw. Directly integrating the distribution functions leads to complex but exact flowfield solutions. To validate these solutions, we perform numerical simulations with the direct simulation Monte Carlo (DSMC) method. In general, the analytical and numerical results are virtually identical. The evaluation of these analytical solutions only requires less than one minute while the DSMC simulations require several days.

适用于中等耦合等离子体的碰撞算子

完全电离等离子体中，当试探粒子分布函数fα是关于试探粒子速度vα的偶函数时，导出了一个新的动力学方程的碰撞算子．该碰撞算子同时包括了大角散射（库仑近碰撞）和小角散射（库仑远碰撞）的二体碰撞的贡献，因此，该碰撞算子同时适用于弱耦合（库仑对数ln∧≥10）和中等耦合（库仑对数2≤ln∧≤10）等离子体．而且经过修改的碰撞算子和Rosenbluth势有直接的联系，当试探粒子和场粒子满足条件mα＜mβ（如电子-离子碰撞或Lorentz气体模型）和｜vα｜〉｜vβ｜时，经约化的电子-离子碰撞算子同最初的Fokker

Direct visualization of the dynamics of membrane-anchor proteins in living cells

Dynamic properties of proteins have crucial roles in understanding protein function and molecular mechanism within cells. In this paper, we combined total internal reflection fluorescence microscopy with oblique illumination fluorescence microscopy to observe directly the movement and localization of membrane-anchored green fluorescence proteins in living cells. Total internal reflect illumination allowed the observation of proteins in the cell membrane of living cells since the penetrate depth could be adjusted to about 80 nm, and oblique illumination allowed the observation of proteins both in the cytoplasm and apical membrane, which made this combination a promising tool to investigate the dynamics of proteins through the whole cell. Not only individual protein molecule tracks have been analyzed quantitatively but also cumulative probability distribution function analysis of ensemble trajectories has been done to reveal the mobility of proteins. Finally, single particle tracking has acted as a compensation for single molecule tracking. All the results exhibited green fluorescence protein dynamics within cytoplasm, on the membrane and from cytoplasm to plasma membrane.

相位恢复算法在量子关联衍射成像中的应用研究

随着研究工作的逐步深入,目前已经利用经典热光源实现了关联衍射成像,使得该技术有望在X射线以及中子衍射成像等方面得到广泛应用。在实验利用非相干光得到物体无透镜傅里叶变换频谱的基础上,采用误差消除与输入输出恢复算法,并结合过采样理论,实现了实验所用物体透射率函数的恢复。分别得到了纯振幅物体的振幅分布函数与纯相位物体的相位分布函数。此外,还讨论了实验所得傅里叶变换频谱的噪声等因素对图像恢复结果的影响。

Enlarging the depth of focus by filtering in the phase-space domain

The ambiguity function was employed as a merit function to design an optical system with a high depth of focus. The ambiguity function with the desired enlarged-depth-of-focus characteristics was obtained by using a properly designed joint filter to modify the ambiguity function of the original pupil in the phase-space domain. From the viewpoint of the filter theory, we roughly propose that the constraints of the spatial filters that are used to enlarge the focal depth must be satisfied. These constraints coincide with those that appeared in the previous literature on this topic. Following our design procedure, several sets of apodizers were synthesized, and their performances in the defocused imagery were compared with each other and with other previous designs. (c) 2005 Optical Society of America.

目标反射特性对激光测距的影响

针对非合作小目标激光测距系统,目标表面的反射特征对激光回波信号有很大的影响。建立测量表面双向反射分布函数(BRDF)的装置,对常用的两种热控材料——白漆涂层和F36多包层,测量了其在1064 nm波长下的双向反射分布函数。得出了白漆涂层镜面反射很小,散射角较大,利于各方向接收回波信号;而F36多包层镜面反射很强,散射角-2°~2°,不利于探测。通过由表面BRDF与由朗伯散射计算得到的最小接收功率的比较,得出了入射角大于45°入射白漆涂层时,回波信号较小;大于2°入射F36多包层时,没有回波信号。

伦纳德琼斯薄膜材料导热系数的分子动力学研究

提出从微观的角度,借助计算机工具,将薄膜破坏发展的细节展现出来的分子动力学研究的思想。使得实验上难以观察的现象变得形象而便于理解。应用分子动力学理论,使用伦纳德琼斯势函数,采用预校正积分法和虚拟外力约束标定方法,模拟薄膜体系的传热系数受体系的密度、温度的影响,同时结合体系粒子的径向分布函数和长程分布函数分析了相应的系统结构特性。另外,采用不同的模拟尺寸获得了低维材料所特有的“高温尺寸效应”。结果显示,导热系数随密度的增加变大,随温度的上升而变大。这些数据现有测量手段是难以得到的,这类模拟可以为研究提供一些

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Research on the influence of fabrication parameters on the performance of buried ion-exchanged glass waveguides using the variational method

The variational method is proposed to analyze the influence of the fabrication parameters on the performance of buried K+-Na+ ion-exchanged Er3+-Yb3+ ions co-doped glass waveguide. The unknown parameters of the Hermite-Gaussian functions as the trial field distribution are determined based on the scalar variational principle. It is demonstrated that the results calculated in this paper agree with those measured in the experiment. The mode dimensions, the effective refractive index, and the overlap factor as the functions of the fabrication parameters are investigated. These results of the variational analysis are useful for the design and optimization of Er3+-Yb3+ ions co-doped waveguides.

Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films

The mechanical properties and fracture behavior of silicon nitride (SiNx) thin film fabricated by plasma-enhanced chemical vapor deposition is reported. Plane-strain moduli, prestresses, and fracture strengths of silicon nitride thin film; deposited both oil a bare Si substrate and oil a thermally oxidized Si substrate were extracted using bulge testing combined with a refined load-deflection model of long rectangular membranes. The plane-strain modu i and prestresses of SiNx thin films have little dependence on the substrates, that is, for the bare Si substrate, they are 133 +/- 19 GPa and 178 +/- 22 MPa, respectively, while for the thermally oxidized substrate, they are 140 +/- 26 Gila and 194 +/- 34 MPa, respectively. However, the fracture strength values of SiNx films grown on the two substrates are quite different, i.e., 1.53 +/- 0.33 Gila and 3.08 +/- 0.79 GPa for the bare Si substrate a A the oxidized Si substrate, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over the edge, Surface, and volume of the specimens and fitted with the Weibull distribution function. For SiNx thin film produced oil the bare Si Substrate, the Volume integration gave a significantly better agreement between data and model, implying that the volume flaws re the dominant fracture origin. For SiNx thin film grown on the oxidized Si substrate, the fit quality of surface and edge integration was significantly better than the Volume integration, and the dominant surface and edge flaws could be caused by buffered HF attacking the SiNx layer during SiO2 removal. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 American Institute of Physics.

Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test

Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus E-ps prestress s(0), and fracture strength s(max) of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of E-ps and s(0) but quite different values of s(max). The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted.