Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition

Rutherford backscattering and channeling is combined with X-ray diffraction to study the depth dependence of crystalline quality in InN layers grown by metalorganic chemical vapor deposition on sapphire substrate. The poorest crystalline quality in InN layer is produced at the intermediate region over 100 nm away from the InN/sapphire interface. With increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. The InN sample grown at 450 degrees C is found to be more homogeneous than the sample grown at 550 degrees C. The difference in the defect profile is explained by the temperature-dependent growth modes. The inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in PL spectrum of the InN sample grown at 550 degrees C. (c) 2006 Elsevier B.V All rights reserved.

XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer grown on a Si(111) substrate. The results show that a 1.26 mum GaN epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a Si(111) substrate. Using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the GaN layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, can be determined. Moreover, the depth dependence of the e(T) can be obtained using this technique. A fully relaxed (e(T)=0) GaN layer for a thickness <2.8 mum is expected. (C) 2002 American Institute of Physics.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.

Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

In a search for the mechanism of the induced reduction reaction that occurred in X-ray photoelectron Spectroscopy (XPS) depth profiles measured experimentally on CeO2/Si epilayers grown by ion beam epitaxy (IBE), several possibilities have been checked. The first possibility, that the X-ray induces the reaction, has been ruled out by experimentation. Other possible models for the incident-ion induced reaction, one based on short-range interaction (direct collision) and the other based on long-range potential accompanied with the incident-ions, have been tested by simulation on computer. The results proved that the main mechanism is the former, not the latter. (C) 1998 Elsevier Science Ltd. All rights reserved.

An adaptive frequency synthesizer architecture reducing reference sidebands

An adaptive phase-locked loop (PLL) frequency synthesizer architecture for reducing reference sidebands at the output of the frequency synthesizer is described. The architecture combines two tuning loops: one is the main loop for locking the PLL frequency synthesizer and operating all the time, the other one is auxiliary loop for reducing reference sidebands and operating only when the main loop is closely locked. A 1.8V 1GHz fully integrated CMOS dual-loop frequency synthesizer is designed in a 0.18um CMOS process. The suppression of the reference sidebands of the proposed frequency synthesizer is 13.8dB more than that of the general frequency synthesizer.

Interaction of linear waves with an array of infinitely long horizontal circular cylinders in a two-layer fluid of infinite depth

The linear water wave scattering and radiation by an array of infinitely long horizontal circular cylinders in a two-layer fluid of infinite depth is investigated by use of the multipole expansion method. The diffracted and radiated potentials are expressed as a linear combination of infinite multipoles placed at the centre of each cylinder with unknown coefficients to be determined by the cylinder boundary conditions. Analytical expressions for wave forces, hydrodynamic coefficients, reflection and transmission coefficients and energies are derived. Comparisons are made between the present analytical results and those obtained by the boundary element method, and some examples are presented to illustrate the hydrodynamic behavior of multiple horizontal circular cylinders in a two-layer fluid. It is found that for two submerged circular cylinders the influence of the fluid density ratio on internal-mode wave forces is more appreciable than surface-mode wave forces, and the periodic oscillations of hydrodynamic results occur with the increase of the distance between two cylinders; for four submerged circular cylinders the influence of adding two cylinders on the wave forces of the former cylinders is small in low and high wave frequencies, but the influence is appreciable in intermediate wave frequencies.

Large depth-of-view portable three-dimensional laser scanner and its segmental calibration for robot vision

A portable 3D laser scanning system has been designed and built for robot vision. By tilting the charge coupled device (CCD) plane of portable 3D scanning system according to the Scheimpflug condition, the depth-of-view is successfully extended from less than 40 to 100 mm. Based on the tilted camera model, the traditional two-step camera calibration method is modified by introducing the angle factor. Meanwhile, a novel segmental calibration approach, i.e., dividing the whole work range into two parts and calibrating, respectively, with corresponding system parameters, is proposed to effectively improve the measurement accuracy of the large depth-of-view 3D laser scanner. In the process of 3D reconstruction, different calibration parameters are used to transform the 2D coordinates into 3D coordinates according to the different positions of the image in the CCD plane, and the measurement accuracy of 60 mu m is obtained experimentally. Finally, the experiment of scanning a lamina by the large depth-of-view portable 3D laser scanner used by an industrial robot IRB 4400 is also employed to demonstrate the effectiveness and high measurement accuracy of our scanning system. (C) 2007 Elsevier Ltd. All rights reserved.

Analysis of the modulation depth affected by the polarization orientation in polarization interference imaging spectrometers

The influence of the orientations of both polarizer and analyzer on modulation depth of spatially distributed interferograms for static polarization interference imaging spectrometer (SPIIS) is analyzed. A generally, theoretical relationship to determine the modulation depth of a SPIIS is derived. The special cases of maximum modulation depth (V = 1) and the minimum modulation depth (V = 0) are examined. Our results will provide a theoretical and practical guide for studying, developing and engineering polarization interference imaging spectrometers. (C) 2003 Elsevier B.V. All rights reserved.

Passive mode locking of an Yb:YAB laser with a low modulation depth SESAM

A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW.