Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate. (C) 2008 Elsevier B.V. All rights reserved.

The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films have been fabricated by implanting Mn into unintentionally doped nonpolar a-plane GaN films at room temperature, and a subsequent rapid thermal annealing. The X-ray diffraction analysis shows that after rapid thermal annealing the peak of the GaN X-ray diffraction curve shifts to a lower angle, indicating a slight expansion of the GaN crystal lattice. Atomic force microscopy analysis shows that the annealing process does not change the morphology of the sample greatly. Magnetic property analysis indicates that the as-annealed sample shows obvious ferromagnetic properties. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Optical properties and exciton localization in GaNas/GaAs

GaNAs/GaAs single quantum wells (SQWs) and dilute GaNAs bulk grown by molecular beam epitaxy(MBE) were studied by photoluminescence (PL), selectively-excited PL, and time-resolved PL. Exciton localization and delocalization were investigated in detail. Under short pulse laser excitation, the delocalization exciton emission was revealed in GaNAs/GaAs SQWs. It exhibits quite different optical properties from N-related localized states. In dilute GaNAs bulk, a transition of alloy band related recombination was observed by measuring the PL dependence on temperature and excitation intensity and time-resolved PL, as well. This alloy-related transition presents intrinsic optical properties. These results are very important for realizing the abnomal features of III-V-N semiconductors.

Surface-enhanced resonant Raman spectroscopy (SERRS) of single-walled carbon nanotubes absorbed on the Ag-coated anodic aluminum oxide (AAO) surface

In this paper, we developed a new kind of substrate, the silver-coated anodic aluminum oxide (AAO), to investigate the characters of surface-enhanced resonant Raman scattering (SERRS) of the dilute single-walled carbon nanotubes. Homogeneous Ag-coated AAO substrate was obtained by decomposing the AgNO3 on the surface of AAO. single-walled carbon nanotubes (SWNTs) were directly grown onto this substrate through floating catalyst chemical vapor deposition method (CVD). SERRS of SWNTs was carried out using several different wavelength lasers. The bands coming from metallic SWNTs were significantly enhanced. The two SERRS mechanisms, the "electromagnetic" and "chemical" mechanism, were mainly responsible for the experiment results. (c) 2005 Elsevier B.V. All rights reserved.

Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001

The photoluminescence of a GaAsN alloy with 0.1% nitrogen has been studied under pressures up to 8.5 GPa at 33, 70, and 130 K. At ambient pressure, emissions from both the GaAsN alloy conduction band edge and discrete nitrogen-related bound states are observed. Under applied pressure, these two types of emissions shift with rather different pressure coefficients: about 40 meV/GPa for the nitrogen-related features, and about 80 meV/GPa for the alloy band-edge emission. Beyond 1 GPa, these discrete nitrogen-related peaks broaden and evolve into a broad band. Three new photoluminescence bands emerge on the high-energy side of the broad band, when the pressure is above 2.5, 4.5, and 5.25 GPa, respectively, at 33 K. In view of their relative energy positions and pressure behavior, we have attributed these new emissions to the nitrogen-pair states NN3 and NN4, and the isolated nitrogen state N-x. In addition, we have attributed the high-energy component of the broad band formed above 1 GPa to resonant or near-resonant NN1 and NN2, and its main body to deeper cluster centers involving more than two nitrogen atoms. This study reveals the persistence of all the paired and isolated nitrogen-related impurity states, previously observed only in the dilute doping limit, into a rather high doping level. Additionally, we find that the responses of different N-related states to varying N-doping levels differ significantly and in a nontrivial manner.

Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy

Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3 mu m GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T-o and slope efficiency deteriorate. Furthermore, T-o has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer's surface. RTA with deposition Of SiO2 was performed to avoid this deterioration, T-o was improved over the samples that underwent RTA without SiO2. Post-growth and in situ annealing were also investigated in a 1.55 mu m GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 Elsevier B.V. All rights reserved.

Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers

Rapid thermal annealing (RTA) has been demonstrated as an important way to improve the crystal quality of GaInNAs(Sb)/GaAs quantum wells. However little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. When a GaAs-based laser is grown, AlGaAs is usually used for cladding layers. The growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the GaInNAs(Sb) active region, which affects the material quality. To investigate this effect, various post-growth annealing processes were performed to simulate this process. Great enhancement of the PL intensity was obtained by a two-step process which consisted of annealing first at 700 degrees C for 60 s and then at 600 degrees C for 45 min. We transferred this post-growth annealing to in situ annealing. Finally, a GaInNAsSb laser was grown with a 700 degrees C in situ annealing process. Continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time.

渭北泥炭资源在栽培基质中的应用研究

针对人工栽培基质中基质配比问题,采用生物试验的方法,对陕西彬县的泥炭、陕西铜川的油页岩、陕西关中土粘化层土壤,进行不同比例的配合后,再对配合基质设制不同处理,进行作物的室内栽培试验,通过生物量、生物性状(根冠比)、及产量分析来判断基质配比的优劣。研究结果表明:随着泥炭比例的增加,小青菜的产量增加,泥炭量达到一定值后,随着泥炭量的增加,小青菜的产量反而降低;泥炭与<1 mm粘土配合(PS)处理中,PS3处理(泥炭∶粘土为3∶1)小青菜地上部分产量最大;在泥炭与7~10 mm粘土配合(PB)处理中,PB2处理(泥炭∶粘土为2∶1)小青菜地上部分产量最大;对小青菜根系生物量来说,在泥炭和粘土比例较小时,小颗粒粘土处理的根量明显高于大颗粒粘土处理,在泥炭和粘土的比例较大时,大颗粒处理高于小颗粒处理。对油页岩处理而言,在泥炭量较少的配合基质中加入8%的油页岩能起到良好的增产作用;而在泥炭含量较多时,对小青菜产量的影响是负面的;石灰处理对小青菜地上部分产量影响都是负面的,但是对小青菜根系生物量的影响基本是正面的。高温处理对小青菜地上部分产量的影响基本上都是负面的,对小青菜根系的生长也基本是起负作用的。根冠比达到某一适宜值...

两亲性三嵌段共聚物在选择性稀溶液中的自组装及应用

本论文主要研究了ABA和ABC型两亲性三嵌段共聚物在选择性稀溶液中的自组装行为，得到了多种形态新颖、结构复杂多样的胶束，研究了这些复杂胶束的形成过程，探讨了影响胶束形态的各种因素并通过适当的方法对胶束形态进行调控。研究了聚乙烯基毗陡（P4VP）／聚苯乙烯（PS）三嵌段共聚物P4VP-b-PS-b-P4VP在二氧六环／水中的自组装行为，成功得到了嵌段共聚物环状胶束，并通过实验研究了环状胶束的形成过程。结果表明，胶束形态依赖于退火时间的长短。随着退火时间的延长，胶束结构从棒状过渡到环形结构。以实验结果为基础提出了环状胶束形成的新的机理，即囊泡塌陷形成环。同时，通过改变实验条件还得到了一些新型的环状复合结构，如环套环形、鸟状、哑铃形、戒指形、网络状等结构，并得到了与计算机模拟一致的结果。通过不同的方法对ABA型三嵌段共聚物（P4VP-b-PS-b-P4VP）在选择性溶液中的自组装胶束形态进行调控：首先，详细研究了P4VP-b-PS-b-P4VP在不同的共溶剂中的自组装行为。结果表明通过单纯改变共溶剂的性质可以很方便地调节胶束的形态，得到了球、棒、囊泡等结构。并用混合溶剂的方法得到了长度和直径可控的纳米线胶束。同时，通过加入第二种选择性溶剂（核层嵌段PS的选择性溶剂甲苯）的方法使形成胶束的核层嵌段在胶核中的伸展程度增加，从而使胶束形态发生转变。其次，研究了加入表面活性剂十五烷基苯酚（PDP）以构建分子间氢键来调节P4VP-b-PS-b-P4VP的胶束形态。结果表明，通过调节PDP的加入量可以使胶束形态发生从球到棒，到网络状、再到囊泡结构的转变。通过实验对比系统地研究了PDP的加入对胶束形态转变的影响，提出了相应的形态转变机理。再次，研究了不同分子量的嵌段共聚物之间共混及共聚物与均聚物共混对胶束形态的影响。结果表明加入亲油嵌段的均聚物对共聚物胶束形态影响非常明显，胶束形态与加入的均聚物的分子量及加入量直接相关。同时得到了一些新形态的胶束，如海绵状、笼子状等。共聚物共混的研究结果表明：通过两种不同分子量的共聚物共混可以得到这两种共聚物胶束的过渡态结构。用共聚物混合的方法还可以得到一些具有生物模拟性的胶束结构，如乌贼状、章鱼状等。这加深了人们对囊泡的形成机理及各种胶束形态之间形态转变的认识。P4VP-b-PS-b-P4VP通过在二氧六环／水中的自组装形成了囊泡，结果表明囊泡的尺寸依赖于初始状态下共聚物在共溶剂中的浓度及退火时间。除得到常规的球形囊泡外，还得到一些非球形囊泡，如长条形、三角形、项链形等囊泡结构。结合计算机模拟的方法研究了囊泡的形成机理，发现这些不同结构的囊泡的形成是由于初始状态下密度涨落所引起的。研究了实验中经常出现的各种胶束形态共存现象的原因，发现体系中亚稳态的存在是多形态共存的重要原因之一。通过聚苯乙烯一左聚乙烯基毗睫一左聚氧乙烯（PS一b一PZVP一b一PEO）在THF／水中的二次自组装首次得到了一种具有生物模拟性的巨大的节状蠕虫胶束（SWM）。研究发现，SWM是由重复单元盘状结构和丝状结构相连组成的。最令人吃惊的是这种SWM与自然界中的一些生命体如蛆叫、蛹、昆虫类的幼虫结构非常相似。通过对SWM形成过程中的中间态胶束结构的深入研究发现SWM是由球形胶束通过二次自组装形成的。SWM的形成过程可以分为三个阶段：ABC三嵌段共聚物先组装形成球形结构；这些球型结构粘连在一起形成梭形的中间结构；这些梭状中间结构中的球经过重组和重新调整各嵌段的排布最终形成SWM。用所得到的嵌段共聚物胶束为模板，采用无电沉积的方法成功制备了各种形态的金属一有机高分子纳米复合材料。用简单的方法还得到了导电金属金一银的双金属纳米结构材料。这些纳米结构材料在微电子器件等领域有潜在应用价值。以上研究结果丰富了人们对嵌段共聚物在选择性介质中自组装行为的理解，为人们提供了对生物材料自组装本质的理解的依据。这在两亲性分子在溶液中自组装的基础研究方面以及基于这些自组装形态而构建结构及功能更复杂的纳米结构材料等方面都有一定的意义。

半结晶性嵌段共聚物自组装与薄膜微相分离

本论文以半结晶性的PLLA-b-PS为研究对象，主要研究两个方面的问题。首先研究聚合物结晶对嵌段共聚物在稀溶液中的自组装行为的影响。在此基础上，研究薄膜状态下，聚合物结晶与微相分离之间的相互作用。首先，我们系统地研究了PLLA-b- PS在不同溶剂中的自组装结构。通过调节溶剂选择性由中性向弱选择性和选择性改变，PLLA-b-PS分别形成类旋节图案，松散的胶束结构和典型的胶束核壳结构。使用混合溶剂，实现了从结晶性的球形胶束向结晶性的片状胶束的转变。标度理论分析和实验结果表明，溶剂与胶束结晶核心之间的界面能的增加是发生这一转变的主要原因。为了研究薄膜中的微相分离与结晶之间的相互作用，我们比较了三种薄膜条件下的相分离与结晶过程。均匀平坦的PLLA-b-PS薄膜是旋节不稳定的，在几以上时，分子链发生微相分离，形成旋节图案，表面诱导分子链的伸展有序化过程促使PLLA分子链发生折叠结晶，形成非经典的亚稳态凸出结构，相分离层间距增大50％。结晶过程为一级动力学。在薄膜中引入成核剂时，PLLA在几以上即开始结晶，同时实现了PLLA与P3之间的相分离，薄膜的旋节不稳定性得到了松弛。结晶使薄膜收缩，形成大量的裂纹。在PLLA熔点以上时，以裂纹为核，在薄膜中形成大量的孔洞。孔洞的生长为经典的动力学过程。我们利用自组装方法在薄膜中引入半结晶性的开放的纳米棒。在几以上时，PLLA在纳米棒中发生结晶，诱导薄膜中的分子链向纳米棒迁移，从而在薄膜中形成孔洞结构。同时，薄膜中的未结晶分子链被表面和界面诱导取向，这种取向结构利于PLLA结晶，结晶被加速，从而孔洞的生长也被加速。也就是说，结晶与孔洞的生长相互促进。在相分离薄膜中，PLLA的结晶形态与结晶温度有关。To＜TgPS时，结晶被束缚在相结构中，相分离结构不变；TgPs＜Tc＜Tm以及Tc→Tm时，结晶对相结构有一定的破坏，相分离片层结构的层间距增大，薄膜收缩，形成大量的裂纹和缺陷。在180℃时，PLLA形成不稳定的晶体结构；PLLA与PS之间的相分离强度被减弱，在线张力作用下，岛状结构的相对高度大幅度增加；在岛状结构的边缘，线张力驱使部分分子链穿越已有的相结构，形成多层岛状结构。

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN_x:H by HF solution. A low etch rate was achieved by increasing the SiH_4 gas flow rate or annealing temperature, or decreasing the NH_3 and N_2 gas flow rate. Concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO_2 and SiN_x:H. A high etching selectivity of SiO_2 over SiN_x:H was obtained using highly concentrated buffered HF.

Optical study of localized and delocalized states in GaAsN/GaAs

Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

一株丝状真菌对半纤维素利用的初步研究

本文筛选出一株能利用木糖产乙醇的丝状真菌Z7，对其利用木糖和半纤维素水解产物产乙醇的发酵条件进行了研究，并对Z7 利用玉米芯产木聚糖酶的条件进行了优化。全文分为三部分： 第一部分：目标微生物筛选、纯化及系统发育分析。以木糖为唯一碳源，采用梯度稀释和平板化线法从高温、中温酒曲中分离到16 株能利用木糖良好生长的丝状真菌；通过发酵试验复筛，获得一株能产乙醇的丝状真菌Z7；综合形态学和ITS 序列分析，初步鉴定为Aspergillus flavus。 第二部分：Z7 的乙醇发酵条件研究。以木糖为碳源，通过单因素试验确定最佳氮源和发酵温度；通过正交试验及SPSS 软件分析得到了不同N、P、K 成分对乙醇、残糖和菌体干重的影响。获得最佳的发酵条件为：（g/L）木糖50，尿素1, NH4NO3 1, K2HPO4 2 , KCl 0.5 , MgSO4.7H2O 0.5 , NaNO3 1 , pH 自然，培养温度33 ℃。以玉米芯半纤维素稀酸水解液为底物进行乙醇发酵，根据稀酸水解的单糖释放量和乙醇产量，确定115 ℃，1 h 为最佳玉米芯预处理条件；结合最佳发酵条件，添加1 g/L 的吐温20 能获得最大的乙醇浓度8.31 g/L。因此，Aspergillus flavus Z7 能利用半纤维素水解产物产乙醇，其中木糖的利用率80%以上。 第三部分：Z7 利用玉米芯产木聚糖酶条件优化。Aspergillus flavus Z7 在具有产乙醇能力的同时还具有产木聚糖酶的能力。本文通过单因素和正交试验得到最佳产酶培养基组分为：(g/L)玉米芯20，尿素2, 酵母膏2.5, K2HPO4 5，NaNO31, MgSO4.7H2O 1。单因素试验表明，用纱布代替塑料布密封摇瓶封口能显著提高产酶量；Z7 在碱性条件下具有更强的产酶性能。在最优条件下发酵，能产生最大木聚糖酶活122.23IU/mL。通过薄层分析，验证了Z7 产生的木聚糖酶具有水解木聚糖生成木糖及木寡糖的能力。 A strain of filamentous fungus which can produce ethanol by using the xylose was isolated in this research. The ethanol fermention conditions from xylose and dilute-acid hydrolyzate of the corn core were studied. The conditions of xylanase production by Z7 were also optimized. The paper involved three parts. Part1: Isolation, purification and phylogenetic analysis of the microbe. By using xylose as the single carbon source and the pla te streaking method, several filamentous fungi were isolated from the wine starter; through the fermentation test, a filamentous fungus Z7 which can produce ethanol was further recognized; furthermore, according to the morphologic observation and ITS seque nces analysis, Z7 was identified as Aspergillus flavus at the first step. Part2: Research on the condition of ethanol fermentation by Z7. By single factor experiment, the optional nitrogen resource and temperature of the fermentation were fixed; meanwhile, through the orthogonal array tests and the analysis of statistic software SPSS, the optional component of the culture medium and the fermentation condition were organized as follows: (g/L) xylose 50, urea 1, NH4NO3 1, K2HPO4 2, KCl 0.5 , MgSO4.7H2O 0.5, NaNO31, pH nature, temperature 33℃. Based on these optimal parameters, the fermentation of dilute-acid hydrolyzate of the corn core was carried on by Z7. According to the quantities of released sugar monomers and content of the ethanol, 115℃ in 1h is the best pretreatment condition; the maximal ethanol content can be obtained when 1g/L Tween 20 was added to. Therefore, the filamentous fungus Aspergillus flavus can use the hydrolysate of hemicellulose to produce ethanol, and the rate of xylose utilization was over 80%. Part3: Optimization of Z7’s xylanase producing condition from corn core. Aspergillus flavus Z7, which can utilize xylose or the hydrolysate of hemicellulose to produce ethanol, also had the ability of xylanase production. The optional component of the culture medium were fixed by the single factor experiment and the orthogonal array tests, and they were organized as follows: (g/L) corn core 20, Urea 2, Yeast extract 2.5, K2HPO4 5, NaNO31, MgSO4.7H2O 1; it was testified by the single factor experiment that sealing the shaking flasks with pledget other than plastic paper can obviously increase the xylanase activity; moreover, Z7 showed better xylanase production ability when in the alkali environment. Under the optional fermentation condition, the maximal xylanase activity 122.23IU/mL was proved. Through the analysis of thin- layer chromatography (TLC), the ability of xylanase from Z7, which can hydrolyze xylan to xylose monomer and oligomer, was vividly displayed.

Coking kinetics on the catalyst during alkylation of fcc off-gas with benzene to ethylbenzene

The production of ethylbenzene from the alkylation of dilute ethylene in fee off-gases with benzene has been commercialized in China over a newly developed catalyst composed of ZSM-5/ZSM-11 co-crystallized zeolite. The duration of an operation cycle of the commercial catalyst could be as long as 180 days. The conversion of ethylene could attain higher than 95%, while the amount of coke deposited on the catalyst was only about 10 wt.%. Thermogravimetry (TG) was used to study the coking behavior of the catalyst during the alkylation of fee off-gas with benzene to ethylbenzene. Based on effects of reaction time, reaction temperature, reactants and products on coking during the alkylation process, it is found that the coking rate during the alkylation procedure follows the order: ethylbenzene > ethylene > propylene > benzene for single component, and benzene-ethylene > benzene-propylene for bi-components under the same reaction condition. Furthermore, the coking kinetic equations for benzene-ethylene, benzene-propylene and ethylbenzene were established. (C) 2003 Elsevier B.V. All rights reserved.

A mathematical model of crevice and pitting corrosion—I. The physical model

A predictive and self-consistent mathematical model incorporating the electrochemical, chemical and ionic migration processes characterizing the propagation stage of crevice and pitting corrosion in metals is described. The model predicts the steady-state solution chemistry and electrode kinetics (and hence metal penetration rates) within an active corrosion cavity as a function of the many parameters on which these depend, such as external electrode potential and crevice dimensions. The crevice is modelled as a parallel-sided slot filled with a dilute sodium chloride solution. The cavity propagation rates are found to be faster in the case of a crevice with passive walls than one with active walls. The distribution of current over the internal surface of a crevice with corroding walls can be assessed using this model, giving an indication of the future shape of the cavity. The model is extended to include a solid hydroxide precipitation reaction and considers the effect of consequent changes in the chemical and physical environment within the crevice on the predicted corrosion rates. In this paper, the model is applied to crevice and pitting corrosion in carbon steel.