Structural and PL properties of Cu-doped ZnO films

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at similar to 380nm and a blue band centered at similar to 430nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn-i) and Zn vacancy (V-Zn) level transition. A strong blue peak (similar to 435 nm) was observed in the PL spectra when the alpha(Cu) (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of alpha(Cu) and the sputtering power on the blue band was investigated.

Long lasting phosphorescence in Eu3+ and Ce3+ co-doped strontium borate glasses

Long lasting phosphorescence (LLP) was observed in Eu2+, Ce3+ co-doped strontium borate glasses prepared under the reducing atmosphere due to the emission of both Eu2+ and Ce3+. The methods of photoluminescence, thermoluminescence and phosphorescence were used to study the samples, and possible mechanism was suggested. The co-doping of Ce3+ ions poisoned the phosphorescence emission of Eu2+ because of the competition to obtain the trapped electron. The phosphorescence of Ce3+ in the sample decays more quickly than that of Eu2+, which is suggested for the reason that the emission energy of Ce3+ is higher or the distance between Ce3+ and electron traps of the glasses is longer.

Investigation on preparation and fluorescence properties of oxy-fluoride glass co-doped with Er3+ and Yb3+

The glass sample based on the composition of 45PbF(2)-45GeO(2)-10WO(3) co-doped with Yb3+/Er3+ was prepared by the fusion method in two steps: melted at 950 degreesC for 20 similar to 25 min then annealed at 380 degreesC for 4 h. Through the V-prism it is found that the refractive index of host glass and the sample are 1.517 and 1.65 respectively. The transmittance was observed by using the ultraviolet-visible-infrared spectrometer in the wavelength range from 0.35 to 2.5mum. The transmittaitce of the host glass is beyond 73%. That of the sample is beyond 50% and there are characteristic absorption peaks of rare-earth ions. The emission spectrum was measured by using the Hitachi F-4500 fluorescent spectrometer pumped by 980 nm semiconductor laser. There are a strong emission peak at 530 nm and a weak peak at 650 nm.

Engineering white light-emitting Eu-doped ZnO urchins by biopolymer-assisted hydrothermal method

With the presence of biopolymer-sodium alginate as additive, Eu-doped ZnO (zinc oxide) urchins consisting of nanorods were synthesized through a hydrothermal route. X-ray diffraction pattern makes evident the absence of phase other than wurtzite ZnO. Upon excited by 325 nm xenon laser, such nanostructured Eu-doped ZnO urchins emit white light, which originates from the luminescence of ZnO and the intra-4f transitions of Eu3+ ions. Besides acting as stabilizing agent, sodium alginate may also sensitize the Eu3+ ions in the nanostructures and facilitate the energy transfer from the host to Eu3+ ions. (c) 2006 American Institute of Physics.

Up-conversion spectrum properties of the oxy-fluoride glass co-doped with Er3+ and Yb3+

Up-conversion of 45PbF(2)-45GeO(2)-10WO(3) oxy-fluoride glasses co-doped with Yb3+ and Er3+ ions were prepared by fusion method through melting at 1223 K and then annealing at 653 K for 4 h. Transmittance of the undoped host glass was beyond 73% in a range of 0.6-2.5 mu m and the co-doped glasses still provided good transmittance beyond 50%. Refractive indices of the host and co-doped glasses were 1.517 and 1.650, respectively. Blue, green and red fluorescence spectra were observed in a range of 400-700 nm under 980 nm diode laser excitation. Up-conversion spectra at about 410, 518, 530and 650 nm were assigned to the 4f electron transitions of H-2(9/2) -> I-4(15)/(2), H-2(15/2) -> I-4(15/2) S-4(3/2) -> I-4(15/2) and F-4(9/2) -> I-4(15/2) of Er3+ ion, respectively. The mechanism of energy transfer between Yb3+ and Er3+ ions in the glass was analyzed. Raman shift shows the non-radiative relaxation of the glass sample is low.

As-doped p-type ZnO films by sputtering and thermal diffusion process

As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. Moreover, the hole concentration of As-doped p-type ZnO was very impressible to the oxygen ambient applied during the annealing process. In addition, the bonding state of As in the films was investigated by x-ray photoelectron spectroscopy. This study not only demonstrated an effective method for reliable and reproducible p-type ZnO fabrication but also helped to understand the doping mechanism of As-doped ZnO. (c) 2006 American Institute of Physics.

P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering

P-doped ZnO films were deposited on n-Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 degrees C in an oxygen ambient at a pressure of 1.3x10(-3)-3.9x10(-3) Pa showed p-type behavior with a hole concentration of 2.7x10(16)-2.2x10(17) cm(-3), a mobility of 4-13 cm(2)/V s, and a resistivity of 10.4-19.3 Omega cm. Films annealed at 750 degrees C in a vacuum or in oxygen ambient at higher pressures (5.2x10(-3) and 6.5x10(-3) Pa) showed n-type behavior. Additionally, the p-ZnO/n-Si heterojunction showed a diodelike I-V characteristic. Our results indicate that P-doped p-type ZnO films can be obtained by annealing in oxygen ambient at very low pressures. (c) 2006 American Institute of Physics.

Hydrothermal synthesis of Fe and Mn doped SnO2 and its magnetic structures

The dilute magnetic semiconductor of Sn1-x-yMnxFeyO2 (0 <= x <= 0.10, 0 <= y <= 0.10) Were syhthesized with the hydrothermal method using SnCl4, Mn(CH3COO)(2) center dot 4H(2)O and FeCl3 center dot 6H(2)O as the raw materials. The structure, morphologies and magnetic properties of the sample were characterized via X-ray powder diffractometer(XRD), transmission electron microscopy(TEM), Raman spectrum and superconducting and quantum interference device(SQUIT), and Mossbeaur spectrum. No secondary phase was found in the XRD spectrum. The morphology of the samples is affected by the kind or the mount of transition metal. The local vibrating model-of Mn Positioned SnO2 sites was found in Raman spectrum. The measured magnetic results indicate that when x = 0.10, y = 0, the sample exhibits strong magnetization in low-temperature (5 K), but the magnetization decrease rapidly at room. temperature; In contrast, when x = 0, y = 0.1, the sample's magnetization and coercivity are both small, but being temperature independent. Mossbeaur spectra indicates that part of the Fe is ferromagnetic coupled, and the simulating results indicate that the ferromagnetic character is intrinsic.

Structural and magnetic properties of insulating Zn1-xCoxO thin films

Cobalt-doped ZnO (Zn1-xCoxO) thin films were fabricated by reactive magnetron cosputtering. The processing conditions were carefully designed to avoid the occurrence of Co precipitations. The films are c-axis oriented, and the solubility limit of Co in ZnO is less than 17%, determined by x-ray diffraction. X-ray photoemission spectroscopy measurements show Co ions have a chemical valance of 2+. In this paper, hysteresis loops were clearly observed for Zn1-xCoxO films at room temperature. The coercive field, as well as saturation magnetization per Co atom, decreases with increasing Co content, within the range of 0.07

The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires

Using first-principles methods, we systematically study the mechanism of defect formation and electronic structures for 3d transition-metal impurities (V, Cr, Mn, Fe, and Co) doped in silicon nanowires. We find that the formation energies of 3d transition-metal impurities with electrons or holes at the defect levels always increase as the diameters of silicon nanowires decrease, which suggests that self-purification, i.e., the difficulty of doping in silicon nanowires, should be an intrinsic effect. The calculated results show that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires. It indicates that Mn and Fe can easily occupy substitutional site in the interior of silicon nanowires. Moreover, they have larger localized moments, which means that they are good candidates for Si-based dilute magnetic semiconductor nanowires. The doping of Mn and Fe atom in silicon nanowires introduces a pair of energy levels with t(2) symmetry. One of which is dominated by 3d electrons of Mn or Fe, and the other by neighboring dangling bonds of Si vacancies. In addition, a set of nonbonding states localized on the transition-metal atom with e symmetry is also introduced. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000445]

Zn2SiO4/ZnO Core/Shell Coaxial Heterostructure Nanobelts Formed by an Epitaxial Growth

Si-doped ZnO can be synthesized on the surface of the early grown Zn2SiO4 nanostructures and form core/ shell coaxial heterostructure nanobelts with an epitaxial orientation relationship. A parallel interface with a periodicity array of edge dislocations and an inclined interface without dislocations can be formed. The visible green emission is predominant in PL spectra due to carrier localization by high density of deep traps from complexes of impurities and defects. Due to band tail localization induced by composition and defect fluctuation, and high density of free-carriers donated by doping, especially the further dissociation of excitons into free-carriers at high excitation intensity, the near-band-edge emission is dominated by the transition of free-electrons to free-holes, and furthermore, exhibits a significant excitation power-dependent red-shift characteristic. Due to the structure relaxation and the thermalization effects, carrier delocalization takes place in deep traps with increasing excitation density. As a result, the green emission passes through a maximum at 0.25I(0) excitation intensity, and the ratio of the violet to green emission increases monotonously as the excitation laser power density increases. The violet and green emission of ZnO nanostructures can be well tuned by a moderate doping and a variation in the excitation density.