Effects of Arsenate on Microcystin Content and Leakage of Microcystis Strain PCC7806 Under Various Phosphate Regimes

Both arsenic pollution and eutrophication are prominent environmental issues when considering the problem of global water pollution. It is important to reveal the effects of arsenic species on cyanobacterial growth and toxin yields to assess ecological risk of arsenic pollution or at least understand naturally occurring blooms. The sensitivity of cyanobacteria to arsenate has often been linked to the structural similarities of arsenate and phosphate. Thus, we approached the effect of arsenate with concentrations from 10(-8) to 10(-4) M on Microcystis strain PCC7806 under various phosphate regimes. The present study showed that Microcystis strain PCC7806 was arsenate tolerant up to 10(-4) M. And such tolerance was without reference to both content of intra- and extra-cellular phosphate. It seems that arsenate involved the regulation of microcystin synthesis and cellular polyphosphate contributed to microcystin production of Microcystis responding to arsenate, since there was a positive linear correlation of the cellular microcystin quota with the exposure concentration of arsenate when the cells were not preconditioned to phosphate starvation. It is presumed that arsenate could help to actively export microcystins from living Microcystis cells when preconditioned to phosphate starvation and incubated with the medium containing 1 mu M phosphate. This study firstly provided evidence that microcystin content and/or release of Microcystis might be impacted by arsenate if it exists in harmful algal blooms. (C) 2008 Wiley Periodicals, Inc. Environ Toxicol 24:97 94, 2009.

Effects of iron on growth, pigment content, photosystem II efficiency, and siderophores production of Microcystis aeruginosa and Microcystis wesenbergii

Changes in growth, photosynthetic pigments, and photosystem II (PS II) photochemical efficiency as well as production of siderophores of Microcystis aeruginosa and Microcystis wesenbergii were determined in this experiment. Results showed growths of M. aeruginosa and M. wesenbergii, measured by means of optical density at 665 nm, were severely inhibited under an iron-limited condition, whereas they thrived under an iron-replete condition. The contents of chlorophyll-a, carotenoid, phycocyanin, and allophycocyanin under an iron-limited condition were lower than those under an iron-replete condition, and they all reached maximal contents on day 4 under the iron-limited condition. PS II photochemical efficiencies (maximal PS II quantum yield), saturating light levels (I-k ) and maximal electron transport rates (ETRmax) of M. aeruginosa and M. wesenbergii declined sharply under the iron-limited condition. The PS II photochemical efficiency and ETRmax of M. aeruginosa rose , whereas in the strain of M. wesenbergii, they declined gradually under the iron-replete condition. In addition, I-k of M. aeruginosa and M. wesenbergii under the iron-replete condition did not change obviously. Siderophore production of M. aeruginosa was higher than that of M. wesenbergii under the iron-limited condition. It was concluded that M. aeruginosa requires higher iron concentration for physiological and biochemical processes compared with M. wesenbergii, but its tolerance against too high a concentration of iron is weaker than M. wesenbergii.

Effects of live food and formulated diets on survival, growth and protein content of first-feeding larvae of Plelteobagrus fulvidraco

In recent years, much progress has been made in the rearing of fish larvae fed only artificial diets. A preliminary study was made in an attempt to evaluate the effects of live food and formulated diets on survival, growth and body protein content of first-feeding larvae of Plelteobagrus fulvidraco. Three test diets varying in protein level were formulated: Feed 1 containing 45% protein, Feed 2 with 50% protein and Feed 3 with 55% protein. Larvae fed live food (newly hatched Artemia, unenriched) were the control. The experiment started 3 days post-hatch and lasted for 23 days. At the end of the 23-day trial, survival was best in the control group (65.6%) whereby the final body weight and specific growth rate (SGR) were significantly lower than those in the test feed groups. At the same time, coefficients of variation for SGR and final body weight in the test groups were significantly higher than those in the control. Whole body protein content in all treatments showed a similar tendency during development: significantly higher 3 days post-hatch, then decreasing significantly, and then increasing unstatistically 10 days post-hatch. All results suggest that live food is still better for first-feeding larvae of P. fulvidraco, since live food leads to healthier larvae growth.

Moisture content in Dall's porpoise (Phocoenoides dalli) tissues: a reference base for conversion factors between dry and wet weight trace element concentrations in cetaceans

Concentration of trace elements measured by dry weight basis has become more commonly used in recent studies on cetaceans than wet weight basis, which was used more in earlier studies. Because few authors present moisture content data in their papers, it is difficult to compare the concentrations of trace elements between various studies. Therefore, we felt that it would be useful if a reference conversion factor (CF) for tissue types could be found to convert between wet weight and dry weight data on trace element concentrations. We determined the moisture contents of 14 tissues of Dall's porpoise (Phocoenoides dalli), and then, calculated the CF values for those tissues. Because the moisture content of each tissue differs from other tissues, it is necessary to use a specific CIF for each tissue rather than a general CF for several tissues. We have also found that CIF values for Dall's porpoise tissues are similar to the same tissues in other cetaceans. Therefore CF values from Dall's porpoise can be reliably used to convert between wet and dry weight concentrations for other cetacean tissues as reference data. (C) 2002 Elsevier Science Ltd. All rights reserved.

Effects of cadmium on chlorophyll content, photochemical efficiency, and photosynthetic intensity of Canna indica Linn.

The effects of cadmium (Cd2+) on growth status, chlorophyll (Chl) content, photochemical efficiency, and photosynthetic intensity were studied on Canna indica Linn. Plant specimens that were produced from a constructed wetland and precultivated hydroponically in 20 L of 1/10 Hoagland solution under greenhouse conditions for I week were exposed to cadmium in concentrations of 0, 0.4, 0.8, 1.6 and 3.2 mg L- Cd2+, respectively. The results show that leaves were injured in the Cd2+ solution by the third day of exposure and the injury became more serious with an increase in the applied heavy metal. Under 3.2 mg L-1 Cd2+ treatment, growth retardation, the decrease of chlorophyll content from 0.70 to 0.43 mg g(-1) FW, and a decrease in Chl a/b ratio from 2.0 to 1.2 were observed. Chl a was more sensitive than Chl b to Cd2+ stress. The decrease was the same with photochemical efficiency. Photosynthetic intensity decreased by 13.3% from 1.5X10(4) mumol m(-2)s(-1) CO2 in control to 1.3x10(4) mumol m(2)s(-1) CO2 in the treatment of 3.2 mg L-1. Because Canna species are used in heavy metal phytoremediation, these results show that C. indica can tolerate 0.4 to 0.8 mg L-1 Cd2+. Therefore, it is a potential species for phytoremediation of cadmium with some limitations only at higher concentrations.

High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates

We studied the structural and optical properties of high Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD). Direct evidences of the gradual evolution of the content of Al, Ga and In along the growth direction were obtained. When the film thickness was over a certain value, however, the AlInGaN epilayer with constant element contents began to form. These results were also supported by the blue shift and splitting of the photoluminescence (PL) peak. For the thinnest epilayer, the surface was featured with outcrops of threading dislocations (TDs) which suggested a spiral growth mode. With increase in thickness, step-flow growth mode and V-shaped pits were observed, and the steps terminated at the pits. (C) 2008 Elsevier B. V. All rights reserved.

High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature

High-indium-content InxGa1-xAs/GaAs single/multi-quantum well (SQW/MQW) structures have been systematically investigated. By optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained In0.475Ga0.525As/GaAs QWs is raised to 7 nm, which is much higher than the value given by the Matthews and Blakeslee model. The good crystalline quality of the strained InGaAs/GaAs MQWs is proved by x-ray rocking curves. Photoluminescence measurements show that an emission wavelength of 1.25 mum at room temperatures with narrower full width at half maximum less than 30 meV can be obtained. The strain relaxation mechanism is discussed using the Matthews-Blakeslee model. (C) 2004 American Institute of Physics.

Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors

Zn1-xMgxS-based Schottky barrier ultraviolet (UV) photodetectors were fabricated using the molecular-beam-epitaxy (MBE) technique. The influence of Mg content on MBE-grown Zn1-xMgxS-based UV photodetectors has been investigated in details with a variety of experimental techniques, including photoresponse (PR), capacitance-voltage, deep level transient Fourier spectroscopy (DLTFS) and photoluminescence (PL). The room-temperature PR results show that the abrupt long-wavelength cutoffs covering 325, 305 295. and 270 nm with Mg contents of 16%, 44%, 57%, and 75% in the Zn1-xMgxS active layers, respectively, were achieved. But the responsivity and the external quantum efficiency exhibited a slight decrease with the Mg content increasing. In good agreement with the PR results, both of the integrated intensity of the PL spectra obtained from Zn1-xMgxS thin films with different Mg compositions (x = 31% and 52%, respectively) and the DLTFS spectra obtained from Zn1-xMgxS-based (x = 5% and 45%, respectively) UV photodetector samples clearly revealed a significant concentration increase of the non-radiative deep traps with increasing Mg containing in the ZnMgS active layers. Our experimental results also indicate that the MBE-grown ZnMgS-based photodetectors can offer the promising characteristics for the detection of short-wavelength UV radiation. (C) 2004 Elsevier B.V. All rights reserved.

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer. (C) 2005 American Institute of Physics.

The effect of In content on high-density InxGa1-xAs quantum dots

We have successfully grown self-assembled InxGa1-xAs (x = 0.44, 0.47, 0.50) quantum dots (QDs) with high density (> 10(11)/cm(2)) by MBE. The effect of In content on the high-density QD is investigated by atomic force microscopy (AFM) and photoluminescence (PL) spectra. It is found that sample with In-mole-fraction of 0.5 shows small size fluctuation and high PL intensity. The influence of growth temperature on high-density QD is also investigated in our experiment. (c) 2005 Elsevier B.V. All rights reserved.

Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy

Long-wavelength high indium content InxGa1-xAs/GaAs single/multi quantum wells (QWs) structures have been successfully grown by molecular beam epitaxy. It is evidenced by X-ray measurements that the critical thickness of the well width of InxGa1-xAs/GaAs QWs with an indium content x of 47.5% can be raised up to 7nm without strain relation. 1.25μ m photoluminescence (PL) emission is obtained from the QWs with narrower full-width at half maximum (FWHM) less than 30meV. Our results are important basements which are useful for further fabricating GaAs-based long-wavelength devices. © 2005 Elsevier B.V. All rights reserved.

Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition

The epitaxial growth of AlxGa1-xN film with high Al content by metalorganic chemical vapor deposition (MOCVD) has been accomplished. The resulting Al content was determined to be 54% by high resolution X-ray diffraction (HRXRD) and Vegard's law. The full width at half maximum (FWHM) of the AlGaN (0002) HRXRD rocking curve was about 597 arcsec. Atomic force microscopy (AFM) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed Alspecies. From transmittance measurement, the cut-off wavelength was around 280 nm and Fabry-Perot fringes were clearly visible in the transmission region. Cathodoluminescence (CL) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction. (C) 2007 Elsevier Ltd. All rights reserved.

Growth of AlGaN epitaxial film with high Al content by metalorganic chemical vapour deposition

A high-Al-content AlGaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire by low pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity, and twisted mosaicity on the conditions of the AlGaN epilayer deposition is evaluated. An AlGaN epilayer with favourable surface morphology and crystal quality is deposited on a 20 nm low-temperature-deposited AlN buffer at a low V/III flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.