Synthesis and random laser application of ZnO nano-walls: a review

This review paper summarises briefly some important achievements of our recent research on the synthesis and novel applications of nanostructure ZnO such as honeycomb shaped 3-D (dimension) nano random-walls. A chemical reaction/vapour transportation deposition technique was employed to fabricate this structure on ZnO/SiO2/Si substrate without any catalyst and additive in a simple tube furnace to aim the low-cost and high qualified samples. Random laser action with strong coherent feedback at the wavelength between 375 nm and 395 nm has been firstly observed under 355 nm optical excitation with threshold pumping intensity of 0.38 MW/cm(2).

Application of bacteriorhodopsin film for polarization phase-shifting interferometry

Photoinduced anisotropy in bacteriorhodopsin (BR) film is based on photoanisotropic selective bleaching of BR molecules under linearly polarized excitation light. It is modulated by the polarization orientation of the linearly polarized light. The anisotropic information recorded in the BR film is read by a circularly polarized light, which is in turn converted into an elliptical polarized light by the BR film. The rotation angle and the ellipticity of the elliptical polarized light are dependent on the polarization orientation of the linearly polarized excitation light. A phase-shifting interferometer based on the photoinduced anisotropy of BR film is presented theoretically and experimentally. Phase shift is controlled by the polarization orientation of the external excitation light, thus, the phase shift can be controlled without moving parts inside the interferometer, which contributes to the mechanical stability of the system.

All-optical switching application of germano-silicate optical fiber incorporated with Ag nanocrystals

银纳米晶体掺杂的高非线性石英光纤的全光转换应用

CALCULATION OF DIELECTRIC-CONSTANTS FOR SEMICONDUCTORS - AN APPLICATION OF ABINITIO PSEUDOPOTENTIAL METHOD

We have used ab initio pseudopotential method to generate basis wavefunctions and eigen energies to carry out first principle calculations of the static macroscopic dielectric constant for GaAs and GaP. The resulted converged random phase approximation (RPA) value is 12.55 and 10.71, in excellent agreement to the experimental value of 12.4 and 10.86, respectively. The inclusion of the exchange correlation contribution makes the calculated result slightly worsen. A convergence test with respect to the number of k points in Brillouin zone (BZ) integration was carried out. Sixty irreducible BZ k points were used to achieve the converged results. Integration with only 10 special k points increased the RPA value by 15%.

Application of step-scan FTIR to the research of quantum cascade lasers

The principle of step-scan Fourier transform infrared （FTIR） spectroscopy is introduced. Double modulation step-scan FTIR technique is used to obtain the quantum cascade laser＇s stacked emission spectra in the time domain. Optical property and thermal accumulation of devices due to large drive current are analyzed.

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

于2010-11-23批量导入

Application of Low and Ultra-Low Pressure Reverse Osmosis Membranes to Water Treatment

于2010-11-23批量导入

650nm AlGaInP quantum well lasers for the application of DVD

Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm(2) respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, The samples of LD have been certified by PUH manufacturers.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.