Comparative on causes and accumulation of selenium in the tree-rings ambient high-selenium coal combustion area from Yutangba；Hubei；China

IEECAS SKLLQG

A new OSL chronology for dust accumulation in the last 130,000 yr for the Chinese Loess Plateau

IEECAS SKLLQG

Late Pliocene-Pleistocene changes in mass accumulation rates of eolian deposits on the central Chinese Loess Plateau

IEECAS SKLLQG

Charge stripping accumulation of light heavy ions in HIRFL-CSR main ring

The charge stripping injection method has been adopted for the accumulation of light heavy ions in HIRFL-CSR. This method has some special requirements for the accelerating particles, and at the same time the structure of the injection orbit has to be changed. In this paper, the design of the orbit has been presented, as well as the calculation of the beam line matching. According to the result of commissioning, stripping injection can accumulate the beam to a higher current.

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.

Electroluminescence of hole block material caused by electron accumulation and hole penetration

In this study, we investigated the electroluminescence (EL) mechanisms and processes of hole block material in the multilayer devices with Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) doped CBP (4,4'-N,N'-dicarbazolebiphenyl) as the light-emitting layer (EML). First, the hole block ability of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was experimentally confirmed by comparing the EL spectra. With increasing hole injection, BCP emission emerges and increases gradually due to the increasing hole penetration from EML into the hole block layer (HBL).

Charge transport in accumulation layers of organic heterojunctions

We studied the charge transport in organic heterojunction films consisting of copper phthalocyanine (CuPc) and copper hexadecafluorophthalocyanine (F16CuPc). The heterojunction effect between CuPc and F16CuPc induced high-density carriers at both sides of heterojunction. The Hall effect was observed at room temperature, which demonstrated the existence of free carriers and their delocalized transport under heterojunction effect. The Hall mobility of 1.2 cm(2)/V s for holes and 2.4 cm(2)/V s for electrons indicated that the transport capability of the heterojunction films is comparable to single crystals. The transport process was further explained by the multiple trap-and-release model according to the temperature dependence of conduction.

Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers

Single-crystal-like organic heterojunction films of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc) were fabricated by weak-epitaxy-growth method. The intrinsic properties of organic heterojunction were revealed through threshold voltage shift of field-effect transistors and measurement of single-crystal-like diodes. At both sides of the heterojunction interface 40 nm thick charge accumulation layers formed, which showed that the long carriers' diffusion length is due to the high crystallinity and low density of deep bulk traps of single-crystal-like films.