Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

A self-consistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations. A new method is introduced to deal with the accumulation of the immobile charges at the AlxGa1-xN-GaN interface caused by spontaneous and piezoelectric polarization in the process of solving the Poisson equation. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. It also includes the effect of exchange-correlation to the one electron potential on the Coulomb interaction. Our analysis is based on the one electron effective-mass approximation and charge conservation condition. Based on this model, the electron wave functions and the conduction band structure are derived. We calculate the intersubband transition wavelength lambda(21) for different Al molar fraction of barrier and thickness of well. The calculated result can fit to the experimental data well. The dependence of the absorption coefficient a on the well width and the doping density is also investigated theoretically. (C) 2004 American Vacuum Society.

Preparation and characterization of the stable nc-Si/a-Si : H films

High-quality nc-Si/a-Si:H diphasic films with improved stability were prepared by using the plasma-enhanced chemical vapor deposition technology. In comparison with typical amorphous silicon, the diphasic silicon films possess higher photoconductivity (two orders larger than that of the amorphous silicon film) and fairly good photosensitivity(the ratio of the photo-to dark-conductivity is about 10) and higher stability (the degradation of the photoconductivity is less than 10% after 24h long light soaking with 50 mW/cm(2) intensity at room temperature). In addition, the diphasic silicon film has a better light spectra response in the longer wavelength range. The improvement in photoelectronic properties may be attributed to: the existence of the disorder within the amorphous matrix, which breaks the momentum selection rule in the optical transition and, consequently, results in the large light absorption coefficient and high photosensitivity; the improved medium range order and low gap states density. Excess carriers generated in the amorphous matrix tend to recombine in the embedded crystallites, which suppresses nonradiative recombination within the amorphous matrix and reduces the subsequent defect creation.

Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure

ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescence under hydrostatic pressure at room temperature. Only a wide emission band is observed for each sample. Its peak energy is much lower than the corresponding band gap of alloys. These bands are ascribed to the radiative annihilation of excitons bound at Te-n(ngreater than or equal to2) isoelectronic centers. The pressure coefficients of the emission bands are smaller than those of alloy band gaps from 48% to 7%. The difference of the pressure coefficient of the emission band and the band gap increases when the binding energy of Te-n centers decreases. It seems contrary to our expectation and needs further analysis. The integrated intensities of emission bands decrease with increasing pressure due to the decreasing of the absorption coefficient associated with the Te-n centers under pressure. According to this model the Stokes shifts between the emission and absorption bands of the Te-n centers are calculated, which decrease with the increasing Te composition in alloys.

Optical properties of nanocrystalline silicon embedded in SiO2

Nanocrystalline silicon embedded SiO2 matrix has been formed by annealing the a-SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption and photoluminescence spectra of, the films have been studied in conjunction with micro-Raman scattering spectra. It is found that absorption presents an exponential dependence of absorption coefficient to photon energy in the range of 1.5-3.0 eV, and a sub-band appears in the range of 1.0-1.5 eV. The exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between surfaces and/or defect states of the silicon nanocrystallites. The existence of Stokes shift between absorption and photoluminescence suggests that the phonon-assisted luminescence would he enhanced due to the quantum confinement effects.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

Improved diphasic nc-si/a-si : H I-layer materials using PECVD

Two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic properties of the films have been investigated as a function of crystalline fraction. In comparison with typical a-Si:H, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( LT) and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (AM 1.5, 100 mW/cm(2)).

Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method

Silicon nanowires (SiNWs) were grown directly from n-(111) single-crystal silicon (c-Si) substrate based on a solid-liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 400-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.

Optical image processing using the photoinduced anisotropy of pyrrylfulgide

A synthesized photochromic compound-pyrrylfulgide-is prepared as a thin film doped in a polymethylmethacrylate (PMMA) matrix. Under irradiation by UV light, the film converts from the bleached state into a colored state that has a maximum absorption at 635 nm and is thermally stable at room temperature. When the colored state is irradiated by a linearly polarized 650 nm laser, the film returns to the bleached state; photoinduced anisotropy is produced during this process. Application of optical image processing methods using the photoinduced anisotropy of the pyrrylfulgide/PMMA film is described. Examples in non-Fourier optical image processing, such as contrast reversal and image subtraction and summation, as well as in Fourier optical image processing, such as low-pass filtering and edge enhancement, are presented. (c) 2006 Optical Society of America.

稀土透明发光薄膜的合成及其应用

利用溶胶-凝胶法制备了SiO_2、TiO_2等单组份凝胶玻璃及二者混合的双组份二元凝胶玻璃。对其中溶胶的形成、溶胶向凝胶的转化过程及最终凝胶玻璃的形成进行了大量系统的研究。稀土(Tb~(3+)、Eu~(3+))配合物分别以预掺杂法、原位(in-situ)掺杂法及原位两步水解法等方法掺入溶胶中，用旋转涂覆法(spin-coating method)制成发光薄膜。利用荧光光谱、红外光谱、X射线衍射分析等现代谱学方法对薄膜的性能进行了分析。由于稀土Eu~(3+)离子的~5D_0→~7F_2跃迁是对环境变化比较敏感的跃迁超灵敏跃迁，相应于这些跃迁的谱线强度随着环境的不同可改变2-4倍，故将Eu~(3+)离子作为荧光探针引入TiO_2凝胶玻璃中来研究TiO_2凝胶形成中的水解、缩聚过程。差热一热重分析表明在400 ℃左右TiO_2凝胶发生了由无定型向锐钛矿型的晶型的转变，在不同温度下处理的TiO_2凝胶的XRD曲线也可得到同样的结论。当温度达到800 ℃时观察到了金红石相的微小的衍射峰。从Eu~(3+)离子的荧光光谱可以看出对应于610 nm的~5D_0→~7F_2的跃迁强度(I_2)和590 nm的~5D_0→~7F_1的跃迁强度(I_1)随着热处理温度的升高而逐渐增强，说明随着处理温度升高，凝胶中水分子不断挥发，热处理过程中的羟基含量由于缩聚反应的不断进行而逐渐减少。~5D_0→~7F_1的跃迁属于磁偶极跃迁，发射强度I_1变化与环境变化无关。定义两个发射强度的比值R(R=I_2/I_1)，由R值的变化可以看出，TiO_2湿凝胶时Eu~(3+)离子与水成水合离子，干凝胶中水合离子逐渐被(Ti-O)_nEu键所取代，Eu~(3+)离子逐渐进入凝胶网状结构中。同时掺入Al~(3+)离子的凝胶中Eu~(3+)的发光强度要大于不含Al~(3+)离子的凝胶中Eu~(3+)的发光强 度，因为Eu~(3+)离子的聚集对荧光有猝灭作用，掺入Al~(3+)离子之后由于其对Eu~(3+)离子的分散作用使得跃迁强度大大增强。采用预掺杂法；原位掺杂法；原位两步水解法制备了稀土Eu~(3+)、Tb~(3+)的羧酸类配合物，2-2‘联吡啶，1，10-邻菲咯啉，β-二酮类等有机配合物掺杂的溶胶-凝胶发光薄膜。双掺Tb~(3+)和苯甲酸的凝胶荧光薄膜的红外分析结果可以看出，制得的凝胶薄膜的红外光谱图与SiO_2凝胶粉末的红外光谱图几乎一致，Tb~(3+)及有机配体掺入凝胶后配合物没有明显的特征振动吸收峰。说明配合物进入凝胶网状结构中，其振动被缩聚反应形成的微小孔隙结构所限制，没能观察到明显的吸收峰。由几种双掺稀土羧酸配合物的SiO_2凝胶薄膜的激发光谱可以看出，当以稀土Eu~(3+)离子或Tb~(3+)离子的特征发射波长监控时，得到的激发谱均为260 nm-350 nm范围内的宽带代替了稀土离子的特征窄带激发光谱，可以判断在凝胶薄膜中已经形成了配合物。而且双掺凝胶薄膜发射峰值比单掺稀土离子的凝胶薄膜发光强度高几个数量级。同时将薄膜在一定温度下进行热处理发现，对于双掺稀土和羧酸配体的凝胶薄膜，50 ℃时发射光谱无明显的发射峰，而随着热处理温度的逐渐升高出现发射峰并且强度逐渐增强，热处理超过100 ℃时发射峰的强度又有所降低。说明温度的升高使凝胶环境向着有利于稀土配合物形成的方向转变，因为两步水解过程中加入的六次甲基四胺会随着温度升高而逐渐分解出OH~-而仗凝胶环境pH值升高；另一方面，由于分子水和HCl的不断挥发也能提高凝胶环境的pH值，从而使配合物的形成反应更加完全。超过120 ℃后，接近配体的熔点(苯甲酸熔点129 ℃)，由于薄膜相当薄使配体的逐渐分解，荧光逐渐减弱；经175 ℃处理后，荧光几乎消失。除了羧酸配合物外还制备了稀土Tb~(3+) (Eu~(3+))与2-2‘联吡啶(邻菲咯啉)、TTA等二元配合物掺杂的溶胶-凝胶发光薄膜。凝胶薄膜的发光强度与相应的纯配合物薄膜相比由于凝胶的独特网状结构而有了较大的提高，通过荧光光谱和荧光寿命的比较均可以得出这样的结论。对凝胶薄膜和纯配合物/PVB薄膜的热稳定性比较可以看出，溶胶-凝胶发光薄膜的荧光强度随温度升高而降低，但与配合物的PVB薄膜的相比，仍显示了一定的热稳定性，在温度超过配合物的分解温度后仍显示出一定的发光强度，而纯配合物/PVB薄膜中配合物的荧光此时几乎完全消失。除了SiO_2凝胶之外，还制备和研究了TiO_2凝胶以及TiO_2-SiO_2复合凝胶作为基质的发光薄膜，发现在TiO_2凝胶中配合物未能象在SiO_2中那样显示出良好的发光性能，可能是因为作为过渡金属钛由于有d轨道与掺入其中的配体作用参与成键，影响了配体与稀土离子之间的能量转移。本论文中还将在光学领域中有重要作用的染料，例如荧光素(FL)引人TiO_2凝胶中，研究了FL在凝胶中的发光性质，对比了FL掺入TiO_2、TiO_2-SiO_2凝胶前后的吸收光谱、荧光光谱的变化。结果表明吸收峰有了较为明显的位移；荧光发射光谱吸收峰位置也有了较大的红移，这可能是由于凝胶的网状结构及孔道内的Ti-OH键等对染料影响的结果。

Effect of Si-Ge interdiffusion on the waveguide properties of SiGe-Si MQW photodetector

Because of Si-Ge interdiffusion in the Si-SiGe interface during the growth process, the square-wave refractive index distribution of a SiGe-Si multiple-quantum-web (MQW) will become smooth. In order to simulate the actual refractive index profile, a staircase approximation is applied. Based on this approach, the dispersion equation of the MQW waveguide is obtained by using a transfer matrix method, The effects of index changes caused by the interdiffusion on the optical field and the characteristics of the photodetector are evaluated by solving the dispersion equation, It is shown that the Si-Ge interdiffusion can result in a reduction of the effective absorption coefficient and the quantum efficiency.

Low -temperature preparation of ZnO films on Si substrates by MOCVD

ZnO films were deposited on Si（100） substrates at 300℃ by metal - organic chemical vapor deposition（MOCVD）. The effect of different ratios of DEZn to N2O on crystal quality was analyzed. It is found that the optimum ratio of DEZn to N2O is 2.1. And in this optimum growth condition, X - ray diffraction （XRD） and scanning probe morphology （SPM） images indicate that the films grow along the c - axis orientation. ZnO film exhibits a strong UV optical absorption near 388 nm. And the optical absorbance is close to zero,that indicates nearly 100% optical transparence. Photoluminescence （PL） spectrum shows only strong near - band - edge emissions with little or no deep - level emission related to defects. The full - width at half - maximum （FWHM） of the ultraviolet emission peak is 80meV. The results indicate that better crystal quality can be obtained.

Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

Precision measurement of excited spectra of oxygen ions

Spectra of the ionized oxygen atom were researched with the Pro-500i monochromator equipped with CCD. The beam foil method was used at energy of 2 MeV in a 2 x 1.7 Tandem accelerator. In this work, we report 201 spectral lines determined in the region 250-350 nm, and most spectral lines were attributed to n, l energy level transitions from O II to O IV atoms. Our experimental results are in good agreement with existing theoretical calculations. Many lines reported in this paper have not been measured in past experiments, and a majority of them are week transitional lines.

Dynamics of excited OCS investigated by resonance-enhanced multiphoton ionization

The predissociation decay behavior of molecule carbonyl sulfide (OCS) has been investigated by resonance-enhanced multiphoton ionization spectroscopy using the pump-probe technique of dichroic femtosecond lasers in real time. The lifetime of excited OCS around 74 720 cm(-1) by two-photon absorption of 268 nm, corresponding to upsilon(1)=1 of the Rydberg state [(2)Pi(1/2)]4ppi((1)Sigma(+)), is directly determined to be tau(D)=1071+/-11 fs. This picosecond decay process indicates that the excited state is predissociative. The temporal information of dissociation enriches the knowledge of the potential-energy surface of the associative excited state.