带胶剥离工艺粘附性实验研究

带胶剥离是微电子工艺的常见工艺步骤.文章通过对带胶剥离的样品进行退火实验,研究了电极蒸发金属和不同基底的粘附特性.实验表明,带胶剥离工艺制备的电极,其金属与衬底的粘附性差,退火过程产生气泡,严重影响了器件的特性.蒸发温度、蒸发室真空度,以及基片表面的清洁度与气泡产生有密切的关系.从这几点入手,提出了相应的改进方法.

光网络中关键性光子集成器件的研究进展

从高速率大容量光纤网络体系基本功能构架（即信息的超大容量传输、灵活的上下载路分插复用、快速的交换共享和高效经济的路由选择）的需求出发，指出光子集成是实现上述功能构架的关键硬件，包括高速响应的集成激光源、波导光栅阵列密集波分复用器、窄带响应集成光电探测器、路由选择的波长变换器、快速响应光开关矩阵以及低损耗多址波导分束器等，并对发展趋向作出评论。

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.

Xe~(23+)离子辐照Al_2O_3的光谱特性

本工作研究460 keV、3 MeV和308 MeV Xe23+辐照Al2O3单晶样品的光致发光特性。从经过460 keV Xe23+辐照后样品的光致发光测试结果可看到,波长为380、413和450 nm的发光峰明显增强,在390和564 nm处出现了新的发光峰。从3 MeV的Xe23+辐照后样品谱的变化可看到,在较低剂量条件下,516 nm(2.4 eV)和564 nm(2.2 eV)处的发光峰随辐照剂量增加而增强,且当剂量增到1×1016cm-2时,564 nm处的发光峰消失,只有516 nm(2.4 eV)处的发光峰较强。从308 MeV Xe23+辐照后样品的光致发光谱中可看到,357 nm(3.47 eV)和516 nm(2.4 eV)处的发光峰随着剂量增加明显增强。辐照后样品的FTIR谱显示:波数在460~510 cm-1和630 cm-1附近的吸收是Al2O3振动模式,经离子辐照后,吸收带展宽;1 000~1 300 cm-1间为Al—O—Al桥氧键的伸缩振动模式,高能辐照后的吸收带向低波数方向移动。

一种高速宽带放大与峰值保持电路的研制

主要介绍了一种高速宽带放大与峰值保持电路。该电路是根据束流位置监测系统的要求而研制的,是该系统的前端部分。主要包括放大电路和峰值保持电路两部分,其主要特点是采用直流耦合的方式对微弱快电压信号进行多级放大,使得信号在放大过程中不会产生附加相移,此外还采取差分放大的方式来有效地抑制直流耦合带来的直流漂移。电路带宽≥70MHz,增益≥700。

青海湖表层底泥中放射性同位素^137Cs的来源

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