6种常用渔药对厚颌鲂鱼苗的急性毒性试验

在水温29~30℃条件下,用硫酸铜与硫酸亚铁合剂(比例5:2)、高锰酸钾、晶体敌百虫、强氯精、溴氯菊脂、甲醛共6种药物对厚颌鲂(Megalobrama pellegrini)鱼苗进行急性毒性试验。试验结果显示,6种药物48h的半致死浓度分别为5.78、6.50、4.90、2.55、0.042、120mg/L,安全浓度分别为0.445、0.528、0.268、0.190、0.003、7.500mg/L,厚颌鲂鱼苗对药物敏感性比一般鱼类高,实际用药时应根据具体情况确定用药时间和用药量,溴氯菊脂不宜作为治疗药物

微囊藻毒素对几种淡水微藻的生长和光合活性的影响

微囊藻毒素(MC)是富营养化淡水水体中最常见的藻类毒素,而MC对藻类生长效应的影响却鲜见报道。通过模拟培养实验,研究了不同质量浓度的MC-RR对淡水藻类的生长和光合效能的影响。结果显示,100μg·L-1以下的MC-RR对产毒铜绿微囊藻Ds(MicrocystisaeruginosaDs)作用并不明显;相反,100μg·L-1MC-RR对铜绿微囊藻无毒株854(Microcystisaeruginosa854)有显著的杀藻效应,表明MC可能改变浮游植物种群中产毒与非产毒微囊藻的比例。MC-RR对其它藻类的

极高CO_2胁迫对被甲栅藻(Scenedesmus armatus)生理活性和细胞结构影响

以被甲栅藻(Scenedesmusarmatus)为材料研究极高浓度CO2对其生理活性和细胞结构的影响。研究表明,被甲栅藻能在60%的CO2浓度下快速生长,在5%、20%、40%、60%、80%、100%CO2浓度下的平均增长率分别是1.228、0.925、0.741、0.305、0.042、0.001g·L-1·d-1DW。通入极高浓度CO2(20%、40%)后,被甲栅藻细胞的光系统II(PSII)最大光化学效率(Fv/Fm)在24h内明显下降,对PSII抑制作用较明显;其后,随培养时间的增长而逐渐恢复

孵化温度对中华鳖4种同工酶和肌肉蛋白基因表达的影响

应用聚丙烯酰胺梯度凝胶电泳 ,对不同温度 (常温 30～ 33℃和低温 2 2～ 2 4℃ )人工孵化的幼鳖肝、肌、肾、心、脑等不同组织的乳酸脱氢酶 (LDH)、异柠檬酸脱氢酶 (IDH)、葡萄糖 6 磷酸脱氢酶 (G 6 PD)和酯酶(EST)等 4种同工酶和肌肉蛋白进行分析研究。结果发现 :不同温度孵化的中华鳖同工酶表达无差异。LDH和IDH的基因表达有组织特异性 ,但不存在遗传多态性 ;G 6 PD和EST同工酶具有遗传多态性。低温孵化的个体的肌肉蛋白有别于常温孵化个体的特异蛋白带。

以RAPD方法分析岩原鲤分类地位

采用opaopoopq等系列44个随机引物对鲤亚科与亚科的几个种类进行随机扩增多态DNA(RAPD)扩增,通过对电泳结果进行系统分析,得出各种间遗传距离分支图.按节点的遗传距离最大数值0.232可以分出亲缘关系最远的两个群体,即由两种普通鲤为一群体,以及由岩原鲤、倒刺和白甲鱼组成的另一群体.从节点间遗传距离数值叠加计算可以得出岩原鲤与其他各种鱼类亲缘关系,遗传距离由近到远分别是:岩原鲤与倒刺(0.344)<岩原鲤与白甲鱼(0.388)<岩原鲤与普通鲤(0.443),岩原鲤与倒刺的遗传距离最小,这一

稀有鮈鲫的脂肪酸组成

稀有鲫汉源种群和彭州种群全鱼中共检测到 3种饱和脂肪酸 (SFA) ,它们是C1 4∶0、C1 6∶0、C1 8∶0。 4种单不饱和脂肪酸 (MUFA) ,它们是C1 4∶1、C1 6∶1、C1 8∶1、C2 0∶1。 4种多不饱和脂肪酸 (PUFA) ,它们是C1 8∶2、C2 0∶4、C2 0∶5 (EPA)、C2 2∶6 (DHA)。SFA占总脂肪酸的2 3 6 3— 2 8 97% ,MUFA占 40 73— 5 4 3 2 % ,PUFA占 9 96— 2 3 1 7% ,EPA占 0 41—

截线抽样法用于鄱阳湖江豚种群数量研究初报

运用截线抽样法调查了在春季4月间鄱阳湖区长江江豚(Neophocaena phocaenoides asiaeorientalis)的种群密度和数量,得出该地区长江江豚种群密度估计值为0.1940头/km2 ,估计数量为388头。探讨了截线抽样法用于浅水型淡水湖泊调查的可行性和有效性以及要注意的问题。

花鲈水霉病及其病原的初步研究

“九五”国家重点科技攻关项目

中国淡水蛭类一新种和—新纪录(无吻蛭目:沙蛭科)

本文记述了无吻蛭目沙蛭科巴蛭属的１新种，命名为云南巴蛭Ｂａｒｂｒｏｎｉａｙｕｎｎａ－ｎｅｎｓｉｓｓｐ．ｎｏｖ．；还记述了该科沙蛭属在我国１新记录——侧眼沙蛭Ｓａｌｉｆａｌａｔｅｒｏｃｕｌａｔａ（Ｋａｂｕ－ｒａｋｉ，１９２１）。

草鱼鳃上寄生毛管虫一新种——变异毛管虫的研究

<正> 吸管亚纲(Subclass suctoria)中,多数种类具有或长或短的炳,附着它物上营固着生活。寄生在鱼类体表、鳃丝内的毛管虫(Trichophrya)和簇管虫(Erastophrya)的种类中,至今未见报道有固着柄的代表。作者于1981年12月检查水生所池养鱼寄生虫时,在体长7—10厘米的草鱼幼鱼鳃上,发现一种毛管虫,根据其分类特点,定名为变异毛管虫

Effect of available food and temperature on the growth and reproduction of Daphnia rosea

Population parameters of Daphnia rosea were studied at various concentrations of Chlorella sp. (0.25, 0.75 and 3.0 mg C l(-1)) at several temperatures (20, 25, 28, and 30 degrees C) in the laboratory. Although there were some differences in the degrees of the effects of the various temperature-food combinations, both food and temperature exerted influences on almost all of the main population parameters of D. rosea. At a water temperature of 28 degrees C, growth and reproduction were reduced, and at the lowest food level (0.25 mgC l(-1)), reproduction failed. D, rosea did not survive at 30 degrees C in spite of abundant food supply, indicating that 30 degrees C is a physiological limit. A positive relationship between body length and brood size was recognized at high and medium food levels. The slope of the regression was the highest at the highest food level and at the lowest temperature (20 degrees C). The low food level exerted a negative influence on the net reproductive rate by lowering the size of egg-bearing females, by decreasing the brood size of each size class, by decreasing the brood number per female, and by increasing the period of empty brood chamber. High water temperature (28 degrees C) also exerted a negative influence on the net reproductive rate in a similar way. For the better understanding of the key factors driving the midsummer dynamics of daphnids in the field, it may be of crucial importance to compare the population parameters of the field populations with experimentally derived values under controlled conditions of food concentration and temperature.

Research progress of self-organized Ge quantum dots on Si substrate

A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs). Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate, the structure analysis of multilayer Ge QDs, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered Ge quantum dots.

Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

AlInGaN quaternary epilayers have been grown with various TMGa flows by metalorganic chemical vapor deposition to investigate the influence of growth rate on the structural and optical properties. Triple-axis X-ray diffraction measurements show AlInGaN epilayers have good crystalline quality. Photolummescence (PL) measurements show that the emission intensity of AlInGaN epilayers is twenty times stronger than that of AlGaN epilayer with comparable Al content. V-shaped pits are observed at the surface of AlInGaN epilayers by atomic force microscopy (AFM) and transmission electron microscopy (TEM). High growth rate leads to increased density and size of V-shaped pits, but crystalline quality is not degraded. (C) 2003 Elsevier B.V. All rights reserved.

Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate

We have investigated the effect of the thickness and layer number of the low-temperature A1N interlayer (LT-A1N IL) on the stress relaxation and the crystal quality of GaN epilayers grown on Si (111) substrate by metalorganic chemical vapor deposition. It is found that the stress decreases with the increase of the LT-AIN IL thickness, but the crystal quality of the GaN epilayer goes worse quickly when the LT-AIN IL thickness is larger than 16 nm. This is because the increase of the LT-AIN IL thickness will increase the coalescence thickness of its upper GaN layer, which sensitively affects the crystal quality of the epilayer. Using multiple LT-AIN ILs is an effective method not only to reduce the stress, but also to improve the crystal quality of the GaN epilayer. With the increase of the interlayer number, the probability that dislocations are blocked increases and the probability that dislocations are produced at interfaces decreases. Thus, dislocations in the most upper part of GaN are reduced, resulting in the improvement of the crystal quality. Finally, it is suggested that when the total thickness of the epilayer is fixed, both the thickness and the number of the LT-AIN IL should be carefully designed to reduce the stress and improve the crystal quality of the epilayer simultaneously. (c) 2004 Elsevier B.V.. All rights reserved.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.