150 resultados para 333-C0012D


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本文报告了我国发生的一种鳗鲡病毒病──鳗鲡出血性开口病的组织病理变化:肝、肾、脾脏组织出血、细胞变性,骨质内有大县白细胞浸润,肝、肾、脾脏细胞超微结构病理变化明显,肾、脾脏造血组织和外周血细胞出现核染色质边集、奇异形核,大量髓鞘样结构、自噬体和自噬溶酶体等,并可见类似凋亡细胞及调亡小体结构和邻近细胞内吞噬体增多现象。根据骨组织中白细胞浸润及器官和血液中部分细胞结构已出现异型性特征,作者认为,鳗鲡出血性开口病可能有癌变的趋势.

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在正常的生长条件下,凤眼莲有较高的叶面系数、叶绿素含量和光合强度。叶片可溶性糖含量也高。在低温胁迫下,凤眼莲和水花生根系活力和过氧化物酶、过氧化氢酶、细胞色素氧化酶、淀粉酶等酶活性均明显下降。试验结果表明,凤眼莲对低温胁迫较水花生更为敏感。

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用15%聚丙烯酰胺凝胶电泳分析比较了鲢鱼早期发育的四个重要阶段:原肠后期、心跳期、出膜期幼鱼和眼色素出现期幼鱼的细胞核组蛋白。这四个时期细胞的核心组蛋白(H_4、H_(2a)、H_(2b)、H_a)没有明显的变化。但是,随着细胞分化的进程,H_1 表现出明显的差异。在这四个时期中也可看到红细胞特有的组蛋白 H_5。文章讨论了组蛋白 H_1 在鲢鱼早期发育阶段对细胞分化的可能调节作用。

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Stable carbon and nitrogen isotope analysis was used to investigate the host-parasite trophic relationship between the parasitic isopod Ichthyoxenus japonensis and one of its freshwater fish host Carassius auratus auratus from Lake Fuxian, China. No significant differences in delta C-13 and delta N-15 were observed between the heterosexual pairs of I. japonensis in the same host. delta C-13 and delta N-15 of I. japonensis were significantly lower than those of its host fish, and the isotopic ratios of the isopod increased with the increase of host fish isotopic signatures. Unlike isotopic fractionation patterns generally observed among consumers and their diets, isopod parasite was delta C-13 and N-15 depleted relative to the muscle tissue of this host fish. Differential isotopic fractionation patterns in the isopod parasite and the fish may be attributed to differences in parasite and host metabolism.

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A multiple-slot waveguide is presented and demonstrated through theoretical simulation. Taking a double-slot waveguide as an example, the results show a nearly 30% enhancement of optical intensity compared with the traditional single-slot waveguide with the same slot gap width. Therefore, the E-field intensity of the slot can be increased by adding another smaller slot. A double-slot waveguide with oxide and air as low index slot materials is realized experimentally and the formation processes of the slots are analyzed.

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Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

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Characteristics of a 1.3-mum GaInNAs RCE PD with respect to the incident light angle were analyzed both in theoretical simulation and experiments. The results show the influence can be neglected when the light incidence angle is less than 3degrees. This is a requirement for the PD to be applied in WDM networks. (C) 2002 Wiley Periodicals, Inc.

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Photoluminescence (PL) measurements were performed on several series of single-side Si-doped pseudomorphic high electron mobility transistors (p-HEMTs) quantum well (QW) samples, with different spacer layer widths, well widths and Si delta -doped concentrations , under different temperatures and excitation power densities. The dynamic competitive luminescence mechanism between the radiations of e2-hh1 and e1-hh1 was discussed in detail. The confining potential, subband energies, corresponding envelope functions, subband occupations and transferring efficiency etc., were calculated by self-consistent finite differential method at different temperatures in comparison with the present experiment results. The relative variation of the integrated luminescence intensity of the two transitions (e1-hh1 and e2-hh1) was found to be dependent on the temperature and the structure's properties, e. g. spacer layer width, dopant concentration and well width.

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The measurements of one hundred 1.3 mu m planar buried crescent (PBC) structure InGaAsP/InP lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semiconductor lasers effectual. By measurement of electrical derivative curves one can evaluate the quality of epitaxial wafer and chip, find the problems in the material and the technology, offer the useful information on increasing the quality and improving the technology of devices. (C) 2000 Elsevier Science Ltd. All rights reserved.

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工作模式是一个算法,它刻画了如何利用分组密码提供信息安全服务.在给AES征集工作模式标准的过程中,NIST收到了15个候选工作模式.简要介绍15个候选工作模式及它们的设计思想。