探索一种监测典型草原草场退化的新方法--结合群落样方调查资料和卫星遥感数据（TM）

大范围、实时、准确地监测典型草原地区草场退化或健康状况对于草原生态系统的保育、农牧业的可持续性发展具有非常重要的意义。比起传统的群落学研究方法，遥感技术对于监测大尺度的植被状况具有无可争议的优越性，并且已经被广泛引入监测植被覆盖变化的研究中。本项研究系统地分析、综述了过去用非遥感手段对放牧和草场退化的关注和研究，介绍了遥感技术应用于植被研究的理论基础、主要途径（植被指数）、有关领域的研究进展。特别是本文提出草场退化状况或整体健康状况可以由基干相互独立的层面表示，而过去监测植被变化主要依赖的NDVI等植被指数只能监测草原植被的个别层面（总量层）。 本文以草场放牧退化比较典型的内蒙古锡林河流域为研究对象，在进行了大量的野外样方调查的基础上，提出一种结合群落样方调查和遥感技术的监测草场健康状况的新方法。本文引入主成份分析方法（PCA），从包含12个反映群落各方面信息的变量中提取出3个有特定生态学意义的主成份，并进一步对其进行分析组合，得出一个能比较敏感、全面反映群落健康状况的新指标-草场健康指数（GHI）。 从6波段的植被光谱反射数据中比较理想地提取出2个主成份：可见光因子和红外光因子。表征群落总量、放牧退化的主成份和GHI与样方光谱反射值有相当的相关性，由此得到GHI与可光、红外光因子的回归模型。 应用此模型到卫星遥感数据（TM），得到GHI影像，并与同一数据的NDVI影像作对比研究，发现GHI在反映放牧等人为干扰对草原植被的影响效应方面比NDVI有明显的优点。此外，GHI影像对植被分布格局，特别是斑块结构有更好的显示效果。应用GHI到历史TM数据，对所研究地域的植被覆盖变化、农牧业的变迁模式等进行了定性研究。研究还发现有较长放牧史的过度放牧区的植被类型没有沿牧压梯度的规律性分布，而是呈随机斑块分布模式。

基于TM模激射的圆柱形结构的微盘激光器

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Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells

Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photo luminescence (PL) that a strong blue shift of the PL peak energy of 47 meV with increasing PL excitation power from 0.63 to 20 mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μ m) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μ m range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μ m wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.

An improved TM method for full two-port calibration of the asymmetric test fixtures

Three known standards, including at least one transmission standard, are normally required for the full two-port calibration of test fixtures. Based on the triple-through method, a new general-purpose calibration procedure using only one known reflection standard is proposed in this paper. The experimental results show that our method call provide a simple and accurate approach to fall two-port calibration of the asymmetric test fixtures. (c) 2005 Wiley Periodicals, Inc.

High-Q TM whispering-gallery modes in three-dimensional microcylinders

We present a generation condition for realizing high-Q TM whispering-gallery modes (WGMs) in semiconductor microcylinders. For microcylinders with symmetry or weak asymmetry vertical waveguiding, we show that TM WGMs can have a high Q factor, with the magnitude of 10(4) at the radius of the microcylinder of 1 mu m, by three-dimensional numerical simulation. The Q factor of TE WGMs is much less than that of TM WGMs in the semiconductor microcylinders due to a vertical radiation loss caused by mode coupling with the vertical propagating mode. The results open up a possible application of TM WGMs in semiconductor microcylinders for efficient current injection microlasers and single photon sources.

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

High Q-factor TM modes in three-dimensional semiconductor microresonators

We have investigated the mode characteristics for three-dimensional (3D) semiconductor microresonators by finite-difference time-domain (FDTD) technique. The results show that the quality-factors (Q-factors) of TM-like modes are much larger than those of TE-like modes as the vertical waveguidng formed by semiconductor materials.

Web应用服务器的可扩展管理模型及其实现

Web应用服务器是为事务性web应用提供一系列运行时服务的分布式系统。它既要管理多种不同类型的资源，又要集成以往成熟的网络管理协议和系统，因此，如何统一有效地管理Web应用服务器的资源、应用和服务成为实现web应用服务的一个难点。为此，本文基于JMX(Java~(TM) Management Extensions)技术，提出了一种可扩展管理模型，该模型具有较好的灵活性和开放性，可扩展能力强。同时，本文还给出了实现该模型的若干关键技术包括可扩展管理内核的实现技术、资源远程管理技术、服务可扩展管理技术。目前该模型已在我们研制的Web应用服务器 WebFrame2．O中成功实现。

Prediction of simultaneously large and opposite generalized Goos-Hanchen shifts for TE and TM light beams in an asymmetric double-prism configuration

It is predicted that large and opposite generalized Goos-Hanchen (GGH) shifts may occur simultaneously for TE and TM light beams upon reflection from an asymmetric double-prism configuration when the angle of incidence is below but near the critical angle for total reflection, which may lead to interesting applications in optical devices and integrated optics. Numerical simulations show that the magnitude of the GGH shift can be of the order of beam's width.