Novel Bi-doped glasses for broadband optical amplification

Broadband infrared luminescence is observed in various Bi-doped oxide glasses prepared by conventional melting-quenching technique. The absorption spectrum of the Bi-doped germanium oxide glass consists of five broad peaks at below 370, 500, 700, 800 and 1000 nm. The fluorescence spectrum exhibits a broad peak at about 1300 nm with full width at half maximum (FWHM) of more than 300 nm when excited by an 808 nm laser diode. The fluorescence lifetime at room temperature decreases with increasing Bi2O3 concentration. Influence of the glass composition and melting atmosphere on the fluorescence lifetime and luminescent intensity is investigated. The mechanism of the broadband infrared luminescence is suggested. The product of stimulated emission cross-section and lifetime of the Bi-doped aluminophosphate glass is about 5.0 X 10(-24) cm(2) s. The glasses might be promising for applications in broadband optical fiber amplifiers and tunable lasers. (c) 2007 Elsevier B.V. All rights reserved.

Bismuth-activated luminescent materials for broadband optical amplifier in WDM system

New broadband near infrared luminescence covering the whole work windows (1260-1625 nm) of the current wavelength division multiplexing (WDM) system was found from bismuth-activated M2O-Al2O3-SiO2 (M = Li, Na) and Li2O-Ta2O5-SiO2 glasses at room temperature in the case of 808 nm-laser excitation. But the near infrared luminescence mechanism of the bismuth-activated glasses is not well understood up to now. The figure-of-merits of bandwidth and gain of the glasses are better than those of Er3+-doped silicate glasses and Ti3+ doped sapphire, implying they are the promising gain-medium candidates for the broadband amplifiers and the widely tunable laser sources. (c) 2007 Elsevier B.V. All rights reserved.

Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

Two-photon excited red upconversion luminescence of thulium ions doped GeS2-In2S3-CsI glass

We report a novel phenomenon in GeS2-In2S3-CsI chalcohalide glass doped with Tm3+ ions. Under irradiation with an 808 nm laser diode, a bright red emission centered at 700 nm is observed for the first time in this glass. The log-log correlation between integrated emission intensity and pump power reveals that a two-photon absorption process is involved in the phenomenon, suggesting that the F-3(3,2) -> H-3(6) transition of Tm3+ ions is responsible for the appearance of the red emission. The results indicate that the indium (In) based chalcohalide glass containing Tm3+ ions is expected to find applications in visible lasers, high density optical storage and three-dimensional color displays. (C) 2009 Elsevier B.V. All rights reserved.

不同退火气氛下γ-LiAlO2形貌和结构研究

研究了温度梯度法生长的γ-LiAlO2晶体在1100℃下富Li气氛和空气中退火处理后的表面形貌、表面结构以及吸收光谱。发现γ-LiAlO2晶体的抛光面在1100℃空气中退火后变为粗糙面，X射线衍射(XRD)分析表明此粗糙面为单相的LiAl5O8。而γ-LiAlO2晶体的抛光面在1100℃富Li气氛中处理后几乎没有变化。同时对不同气氛下热处理的γ-LiAlO2晶体进行了光谱分析，确认了晶片中196nm的吸收峰是由Li空位引起的。

Broadband infrared luminescence of bismuth-doped borosilicate glasses

We prepare bismuth-doped borosilicate glasses and the luminescence properties in infrared wavelength region are investigated. Transmission spectrum, fluorescence spectrum and fluorescence decay curve are measured. The glasses exhibit a broad infrared luminescence peaking at 1340nm with the full width at half maximum of about 205nm, and lifetime of 273 mu s when excited by an 808-nm laser diode. The glasses are promising materials for broadband optical amplifiers and tunable lasers.

GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.

Investigations on bismuth and aluminum co-doped germanium oxide glasses for ultra-broadband optical amplification

The broadband luminescence covering 1.2-1.6 mu m was observed from bismuth and aluminum co-doped germanium oxide glasses pumped by 808 nm laser at room temperature. The spectroscopic properties of GeO2:Bi,Al glasses strongly depend on the glass compositions and the pumping sources. To a certain extent, the Al3+ ions play as dispersing reagent for the infrared-emission centers in the GeO2:Bi,Al glasses. The broad infrared luminescence with a full width at half maximum larger than 200 nm and a lifetime longer than 200 mu s possesses these glasses with the potential applications in broadly tunable laser sources and ultra-broadband fiber amplifiers in optical communication field. (c) 2005 Elsevier B.V. All rights reserved.

Superbroadband 1310 nm emission from bismuth and tantalum codoped germanium oxide glasses

Near-infrared broadband emission from bismuth-tantalum-codoped germanium oxide glasses was observed at room temperature when the glasses were pumped by an 808 nm laser diode. The emission band covered the 0, E, S, C, and L bands (1260-1625 nm), with a maximum peak at similar to 1310 nm, a FWHM broader than 400 nm, and a lifetime longer than 200 lis. The observed broadband luminescence was attributed to bismuth clusters in the glasses. Bismuth-tantalum-codoped germanium oxide glass might be promising as amplification media for broadly tunable lasers and wideband amplifiers in optical communications. (c) 2005 Optical Society of America.

Study on growth and properties of novel gamma-LiAlO2 substrate

Transparent gamma-LiAlO2 single crystal has been grown by Temperature Gradient technique. The surface of the wafer annealed in O-2-atmosphere at 1100 degrees C for 70 h became opaque and Li-poor phase (LiAl5O8); while, that annealed in Li-rich atmosphere kept transparent and smooth. The full-width at half maximum value dropped to 30 arcsecs when the wafer was annealed in Li-rich atmosphere. That annealed in O-2-atmosphere increased to 78 arcsec. Compared with absorption spectra, we can conclude that the 196 nm absorption peak was caused by Li vacancies and the 736 nm peak was caused by O vacancies.

Nd3+掺杂的氧化镧钇透明激光陶瓷的光谱性能研究

Nd3+-doped Y2-2x La-2x O-3 (x = 0.08) transparent ceramics were fabricated by conventional fabrication process. Spectroscopic properties of the samples were investigated. The absorption band of Nd3+ : Y1.84La0.16O3 was broad covering the wavelength range 780-850 nm. When doped with 1.5at% Nd3+, the cross sections of the sample at 820 nm and laser diode pumped 808 nm were 1.81 x 10(-20) cm(2) and 1.54 x 10(-20) cm(2), respectively. The strongest emission peak of the sample was centered at 1078 mn with long fluorescent lifetime, broad emission bandwidth and high quantum efficiency. Because of the additive La2O3, the spectroscopic quality parameter (X-Nd) of matrix was' decreased from 1.6 to 0.46, thus the fluorescence branch ratio of F-4(3/2) - (4) I-11/2 transition was increased to 56.82%. These properties of Nd3' : Y1.84La0.16O3 transparent ceramic are benefitial to achieve high efficient laser output and ultrashort modelocked pulse.

Ti:sapphire laser pumped high average power laser crystal Nd:GGG with high efficiency output

High-quality neodymium doped GGG laser crystals have been grown by Czochralski (Cz) method. Results of Nd:GGG thin chip laser operating at 1.064 μm pumped by Ti:sapphire laser operating at 808 nm were reported. The slop efficiency was as high as 20%.

Nd：YbVO4晶体的拉曼光谱和荧光光谱研究

用群论的方法计算了Nd：YbVO4晶体的拉曼活性振动模数目，在室温下测得了其极化拉曼谱线，并指认了在不同几何配置下，各振动模式所对应的频率。同时，测得了室温下晶体的吸收谱，得到了中心波长为808am吸收峰的半高宽为12nm，并在J-O理论的基础上计算了晶体的光学参数，其三个晶场参数分别为Ω2=6．88945×10^-20cm^2。Ω4=4．13394×10^-20cm^2、Ω6=4．54503×10^-20cm^2，并由此得到^4F3／2能级的荧光寿命为178．69炉，1062nm处的荧光分支比为48．85％，积分发射截面为2．786710^-18cm^2。分别在808nm、940nm激发下测得晶体室温发射谱，观察到了Nd→Yb以及Nd←Yb间的能量传递现象。

窄带干涉滤光片抗击不同输出方式激光的损伤特性研究

利用Nd：YAG调Q单脉冲激光和自由脉冲激光对硬膜窄带干涉滤光片进行激光损伤阈值的测试，并且采用表面热透镜技术测量了滤光片的吸收率。实验发现：窄带干涉滤光片的吸收率和激光损伤阈值强烈依赖于辐照激光波长与窄带干涉滤光片通带的相对位置；在调Q单脉冲激光作用下，不同中心波长的滤光片损伤形貌存在明显的差别，而在自由脉冲激光作用下，各滤光片的损伤形貌则趋于相同．均表现为典型的热熔烧蚀破坏。根据实验结果，结合损伤形貌，通过驻波场理论对激光作用下滤光片内电场分布的分析与模拟．探讨了两种激光模式作用下滤光片的损伤特征和损

用于钕玻璃啁啾脉冲放大系统光谱整形的多层介质膜反射镜

在千焦拍瓦高功率啁啾脉冲放大系统设计中,为了尽量消除增益窄化和增益饱和效应的影响,同时尽可能提高高功率激光输出脉冲信噪比参数,激光脉冲时空和光谱的整形问题备受关注.提出一种光谱整形新方法,利用特定结构的多层介质膜反射镜,可实现对大能量高功率啁啾脉冲钕玻璃放大系统中啁啾脉冲的光谱整形.研究结果表明,只要合理选择多层介质膜系的结构参数,可有效地控制其反射率分布,且在保证反射相位基本不变的条件下其调制度可超过60%.针对钕玻璃1053nm波长设计而成的光谱整形反射镜,反射带宽可达到196nm,色分辨率约为0.1nm,在几十纳米波长范围所对应的相位偏差小于12mrad,相当于λ/524,能够满足"神光Ⅱ"千焦拍瓦改造的技术指标要求.