Xe~(23+)离子辐照Al_2O_3的光谱特性

本工作研究460 keV、3 MeV和308 MeV Xe23+辐照Al2O3单晶样品的光致发光特性。从经过460 keV Xe23+辐照后样品的光致发光测试结果可看到,波长为380、413和450 nm的发光峰明显增强,在390和564 nm处出现了新的发光峰。从3 MeV的Xe23+辐照后样品谱的变化可看到,在较低剂量条件下,516 nm(2.4 eV)和564 nm(2.2 eV)处的发光峰随辐照剂量增加而增强,且当剂量增到1×1016cm-2时,564 nm处的发光峰消失,只有516 nm(2.4 eV)处的发光峰较强。从308 MeV Xe23+辐照后样品的光致发光谱中可看到,357 nm(3.47 eV)和516 nm(2.4 eV)处的发光峰随着剂量增加明显增强。辐照后样品的FTIR谱显示:波数在460~510 cm-1和630 cm-1附近的吸收是Al2O3振动模式,经离子辐照后,吸收带展宽;1 000~1 300 cm-1间为Al—O—Al桥氧键的伸缩振动模式,高能辐照后的吸收带向低波数方向移动。

注入Ar~+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar+后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar+注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响.

退火对Pb辐照Al_2O_3单晶发光特性的影响

研究了230MeV的208Pb27+辐照Al2O3样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×1013ions/cm2时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al2O3振动吸收峰消失,说明Al2O3振动模式被完全破坏。1000~1300cm-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。

退火对He注入及随后~(208)Pb~(27+)辐照的Al_2O_3单晶PL谱的影响

利用高能离子研究了110keV的He+注入Al2O3单晶及随后230MeV的208Pb27+辐照并在不同温度条件下退火样品的光致发光的特性.从测试结果可以清楚地看到在375nm,390nm,413nm和450nm出现了强烈的发光峰.经过600K退火2h后测试结果显示,390nm发光峰增强剧烈,而别的发光峰显示不明显.在900K退火条件下,390nm的发光峰开始减弱相反在510nm出现了较强的发光峰,到1100K退火完毕后390nm的发光峰完全消失,而510nm的发光峰相对增强.从辐照样品的FTIR谱中看到,波数在460—510cm-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al2O3振动吸收峰消失,说明Al2O3振动模式被完全破坏.1000—1300cm-1之间为Al-O-Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动.退火后的FTIR谱变化不大.

离子注入/辐照引起Al_2O_3单晶的改性研究

600 K温度下用110 keV的He+,Ne+,Ar+离子注入及320 K温度下用230 MeV的208Pb27+辐照Al2O3单晶样品,研究了离子注入和辐照对Al2O3单晶样品结构和光学特性的影响。从测得的光致发光谱可以清楚地看到,所有样品在波长为375,413和450 nm处出现了强的发光峰,且所有5×1016ion/cm2注入样品的发光峰均最强。经过高能Pb辐照后的样品,在390 nm处出现了新的发光峰。透射电镜分析发现在注入氖样品100 nm入射深度以内形成了高浓度的小空洞(1—2 nm),在Ne沉积区域有少量大空洞形成。傅立叶变换红外光谱分析发现,波数在460—510 cm-1间的振动吸收带经过离子辐照后展宽,随着辐照量的增大,该振动吸收强度显著减弱。1 000—1 300 cm-1对应Al-O-Al桥氧伸缩振动模式的吸收带,辐照后向高波数方向移动。对离子注入和辐照对Al2O3单晶样品结构损伤机理进行了初步探讨。

Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar+后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar+注入后，其光致发光谱中均出现了新的位于506nm处的发光峰；真空和空气气氛下的退火均对样品在506nm处的发光有增强作用，不同晶面取向的样品发光增强程度不同，且发光增强至最大时的退火温度也不同，空气气氛下的退火使样品发光增强程度更为显著.由此可以看出，退火气氛、退火温度和晶面取向均对样品发光峰强度有影响.

Effects of annealing on the photoluminescence of He ion implanted sapphire after 230-MeV Pb ion irradiation

Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.

Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed.

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

Direct reduction of SO2 to elemental sulfur by the coupling of cold plasma and catalyst (I)

The direct reduction of SO2 to elemental sulfur in flue gas by the coupling of cold plasma and catalyst, being a new approach for SO2 reduction, was studied. In this process, CO2 can be disassembled to form CO, which acts as the reductant under the cold plasma. With the coupling of the cold plasma and the catalyst, sulfur dioxide was selectively reduced by CO to elemental sulfur with a byproduct of metal sulfate, e.g., FeSO4. In the present work, Fe2O3/gamma-Al2O3 was employed as the catalyst. The extent of desulfurization was more than 80%, and the selectivity of elemental sulfur is about 55%. The effects of water vapor, temperature, and the components of simulated flue gas were investigated. At the same time, the coupling of thermogravimetry and infrared method and a chemical analysis method were employed to evaluate the used catalyst. In this paper, we will focus on the discussion of the catalyst. The discussions of the detail of plasma will be introduced in another paper.

The reaction route and active site of catalytic decomposition of hydrazine over molybdenum nitride catalyst

The catalytic properties of the passivated, reduced passivated, and fresh bulk molybdenum nitride for hydrazine decomposition were evaluated in a microreactor. The reaction route of hydrazine decomposition over molybdenum nitride catalysts seems to be the same as that of Ir/gamma-Al2O3 catalysts. Below 673 K, the hydrazine decomposes into N-2 and NH3. Above 673 K, the hydrazine decomposes into N-2 and NH3 first, and then the produced NH3 further dissociates into N-2 and H-2. From the in situ FT-IR spectroscopy, hydrazine is adsorbed and decomposes mainly on the Mo site of the Mo2N/gamma-Al2O3 catalyst. (C) 2004 Elsevier Inc. All rights reserved.

Enlarged area A-type zeolite membranes prepared by vacuum seeding method

High quality A-type zeolite membranes, with enlarged area over 70 cm(2), were successfully synthesized on a tubular alpha-Al2O3 support by applying the vacuum seeding method.

Morphology observation of carbon deposition by CH4 decomposition over Ni-based catalysts

We found a novel morphology variation of carbon deposition derived from CH4 decomposition over NI-based catalysts. By altering the chemical composition and particle size of Ni-based catalysts, carbon filaments, nanofibres and nanotubes were observed over conventional Ni/y-Al2O3, Ni-Co/gamma-Al2O3 and nanoscale Ni-Co/gamma-Al2O3 catalysts, respectively. The simple introduction of Co into a conventional Ni/gamma-Al2O3 catalyst can vary the carbon deposition from amorphous filamentous carbon to ordered carbon fibres. Moreover, carbon nanotubes with uniform diameter distribution can be obtained over nanosized Ni-Co/gamma-Al2O3 catalyst particles. In addition, the oxidation behaviour of the different deposited carbon was studied by using a temperature-programmed oxidation technique. This work provides a simple strategy to control over the size and morphology of the carbon deposition from catalytic decomposition of CH4.

Catalytic partial oxidation of gasoline to syngas in a dense membrane reactor

In our previous work, it was shown that LiLaNiO/gamma-Al2O3 was an excellent catalyst for partial oxidation of heptane to syngas in a fixed-bed reactor at high temperature and the selectivity of CO was about 93%. However, pure oxygen was used as the oxidant. We have developed a dense oxygen permeation membrane Ba0.5Sr0.5Co0.8Fe0.2O3 that can supply pure oxygen for the reaction. In this work, the membrane was combined with the catalyst LiLaNiO/gamma-Al2O3 in one rector for the partial oxidation of heptane that is typical component of gasoline. A good performance of the membrane reactor has been obtained, with 100% n-heptane conversion and >94% hydrogen selectivity at the optimized reaction conditions. (C) 2004 Elsevier B.V. All rights reserved.