Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Optical study of electronic states in GaAsN

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

Small signal equivalent circuit model of vertical cavity surface emitting lasers

Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given in this paper. The modulation properties of VCSEL are simulated using this model in Pspice program. The simulation results are good agree with experiment data. Experiment is performed to testify the circuit model.

Tunable MQW-DBR lasers using selective area growth

The tunable ridge waveguide distributed Bragg reflector (DBR) lasers designed for wavelength-division-multiplex (WDM) communication systems at 1.55 um by using selective area growth (SAG) is reported. The threshold current of the DBR laser is 62mA and the output power is more than 8mW. The isolation resistance between the active region and the Bragg region is 30K Ohm. The total tuning range is 6.5nm and this DBR laser can provide 6 continuous standard WDM channels with 100GHz channel spacing; in the tuning range, the single mode suppression ratio (SMSR) is maintained more than 32dB and the maximum output power variation is less than 3dB.

Preparation and photoluminescence of nc-Si/SiO2 MQW

The deposition rate and refractive index for a-Si(amorphous silicon) and SiO2 grown by PECVD were studied under different pressure, power and proportion of reactant source gases. a-Si/SiO2 MQW(multi-quantum well) with high quality was deposited under suitable conditions, in which the thickness of the a-Si layers is several nanometers. The sample of a-Si/SiO2 MQW was crystallized by laser annealing. Because of the confinement of the SiO2 layers, crystalline grains were formed during the a-Si layers were being crystallized. The size of the crystalline grains were not more than the thickness of the a-Si layers. The a-Si layers were crystallized to be nanometer crystalline silicon(nc-Si), therefore, nc-Si/SiO2 MQW was formed. For the a-Si/SiO2 MQW with 4.0nm a-Si wells separated by 5nm SiO2 barries, most of the a-Si were crystallized to silicon grains after laser annealing,and the size of the grains is 3.8nm. Strong photoluminescence with three peaks from the nc-Si/SiO2 MQW was detected at 10K. The wavelength of the peaks were 810nm, 825nm and 845nm, respectively.

Resonant tunneling of holes in GaMnAs-related double- barrier structures

Using the multiband quantum transmitting boundary method (MQTBM), hole resonant tunneling through AlGaAs/GaMnAs junctions is investigated theoretically. Because of band-edge splitting in the DMS layer, the current for holes with different spins are tuned in resonance at different biases. The bound levels of the "light" hole in the quantum well region turned out to be dominant in the tunneling channel for both "heavy" and "light" holes. The resonant tunneling structure can be used as a spin filter for holes for adjusting the Fermi energy and the thickness of the junctions.

Exploration on enhancing innovation capability of functional information materials in China

The present status and future prospects of functional information materials, mainly focusing on semiconductor microstructural materials, are introduced first in this paper. Then a brief discussion how to enhance the academic level and innovation capability of research and development of functional information materials in China are made. Finally the main problems concerning the studies of materials science and technology are analyzed, and possible measures for promoting its development are proposed.

Si-based resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser

We report all optical clock recovery based on a monolithic integrated four-section amplified feedback semiconductor laser (AFL), with the different sections integrated based on the quantum well intermixing (QWI) technique. The beat frequency of an AFL is continuously tunable in the range of 19.8-26.3 GHz with an extinction ratio above 8 dB, and the 3-dB linewidth is close to 3 MHz. All-optical clock recovery for 20 Gb/s was demonstrated experimentally using the AFL, with a time jitter of 123.9 fs. Degraded signal clock recovery was also successfully demonstrated using both the dispersion and polarization mode dispersion (PMD) degraded signals separately.

The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.