197 resultados para time-resolved fluorescence immunoassay


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Eleven new lifetimes of odd parity excited energy levels in four configurations: 4f12 5d 6s 6p, 4f12 6S2 6p, 4f13 5d 6s and 4f13 6s 7s of atomic thulium have been mesured with atomic-beam laser spectrocopy. Two pulsed dye lasers are used for stepwise excitation and the time-resolved fluorescence decay was used to determine lifetime values. The accuracy of the measurements is about 10%.

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The dynamic interaction processes between a nano-second laser pulse and a gas-puff target, such as those of plasma formation, laser heating, and x-ray emission, have been investigated quantitatively. Time and space-resolved x-ray and optical measurement techniques were used in order to investigate time-resolved laser absorption and subsequent x-ray generation. Efficient absorption of the incident laser energy into the gas-puff target of 17%, 12%, 38%, and 91% for neon, argon, krypton, and xenon, respectively, was shown experimentally. It was found that the laser absorption starts and, simultaneously, soft x-ray emission occurs. The soft x-ray lasts much longer than the laser pulse due to the recombination. Temporal evolution of the soft x-ray emission region was analyzed by comparing the experimental results to the results of the model calculation, in which the laser light propagation through a gas-puff plasma was taken into account. (C) 2003 American Institute of Physics.

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The possibility of lifetime measurement in a flowing medium with phase fluorometry is investigated theoretically. A 3-D time dependent partial differential equation of the number density of atoms (or molecules) in the upper level of the fluorescence transition is solved analytically, taking flow, diffusion, optical excitation, decay, Doppler shift, and thickness of the excitation light sheet into account. An analytical expression of the intensity of the fluorescence signal in the flowing medium is deduced. Conditions are given, in which the principle of lifetime measurement with phase fluorometry in the static sample cell can be used in a flowing medium.

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State-filling effects of the exciton in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array are observed by quantum dot array photolumineseence at a sample temperature of 77 K. The exciton emission at low excitation density is dominated by the radiative recombination of the states in the s shell and at high excitation density the emission mainly results from the radiative recombination of the exciton state in the p shell. The spectral interval between the states in the s and p shells is about 30-40 mcV. The time resolved photoluminescence shows that the decay time of exciton states in the p shell is longer than that of exciton states in the s shell, and the emission intensity of the exciton state in the p shell is superlinearly dependent on excitation density. Furthermore, electron-hole liquid in the quantum dot array is observed at 77 K, which is a much higher temperature than that in bulk. The emission peak of the. recombination, of electron-hole liquid has an about 200 meV redshift from the exciton fluorescence. Two excitation density-dependent emission peaks at 1.56 and 1.59 eV are observed, respectively, which result from quantum confinement effects in QDs. The emission intensity of electron-hole liquid is directly proportional to the cubic of excitation densities and its decay time decreases significantly at the high excitation density.

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We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers. By measuring the exciton decay time as a, function of the monitored emission energy at different temperatures, we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 120K. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.

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Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks.

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Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Angstrom) was studied by steady-state and time-resolved photoluminescence. By applying a perpendicular electrical field, the subband separation energy in the quantum well is continuously tuned from 21 to 40 meV. As a result, it is found that the intersubband relaxation time undergoes a drastic change from several hundred picoseconds to subpicoseconds. It is also found that the intersubband relaxation has already become very fast before the energy separation really reaches one optical phonon energy. (C) 1997 American Institute of Physics.

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Femtosecond time-resolved studies using fluorescence depletion spectroscopy were performed on Rhodamine 700 in acetone solution and on Oxazine 750 in acetone and formamide solutions at different temperatures. The experimental curves that include both fast and slow processes have been fitted using a biexponential function. Time constants of the fast process, which corresponds to the intramolecular vibrational redistribution (IVR) of solute molecules, range from 300 to 420 fs and increase linearly as the temperature of the environment decreases. The difference of the average vibrational energy of solute molecules in the ground state at different temperatures is a possible reason that induces this IVR time-constant temperature dependence. However, the time constants of the slow process, which corresponds to the energy transfer from vibrational hot solute molecules to the surroundings occurred on a time scale of 1-50 ps, changed dramatically at lower temperature, nonlinearly increasing with the decrease of temperature. Because of the C-H...O hydrogen-bond between acetone molecules, it is more reasonable that acetone molecules start to be associated, which can influence the energy transfer between dye molecules and acetone molecules efficiently, even at temperatures far over the freezing point.

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The effect of laser fields on the NO interaction potentials is obtained by the calculation of time-resolved photoelectron spectrum (TRPES) using the time-dependent wave-packet method. The calculation not only shows that the overlap of the pump-probe pulses makes some NO molecular "invisible" states visible, but also that the coupling strength and the positions of relevant curves change on increasing the laser intensity. These changed potentials affect their dynamical behavior and influence the shape and position of each peak in TRPES. That the coupling strength of relevant potentials can be changed by the field-matter interaction is consistent with our ab initio calculations.