部分端面抽运板条激光器腔镜倾斜问题研究

部分端面抽运的板条激光器是一种新型固体激光器．配合混合腔可以实现在大功率下保持高光束质量的激光振荡输出。谐振腔的腔镜倾斜是影响激光器输出特性的重要因素，快速傅里叶方法是一种快捷有效的计算方法，利用此方法模拟了腔镜倾斜对近场相位分布和远场光强分布的影响，并分析了光束质量的变化。理论分析表明，腔镜的小角度倾斜对近场相位影响较大，但对远场光强空间分布影响不大；随着倾斜角度不断增大，远场发散角和光束腰宽度也增大，光束质量虽然存在恶化的趋势，但光束质量因子肝值仍然较小，离轴非稳腔仍能保持高光束质量的输出。

Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60 degrees misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i.e. the lateral coherent lengths in [1 (1) over bar0] directions are larger than those in [110] directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the {111} glide planes.

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m

A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0. 16 A/W at the resonance wavelength of 1.55 mu m have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (C) 2007 Elsevier B.V. All rights reserved.

Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates

GaSb and InSb epilayers grown on GaAs (001) vicinal substrates misoriented toward (111) plane were studied using high resolution x-ray diffraction. The results show that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60 degrees misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane is higher than in the ((1) over bar(1) over bar1) plane. A model was proposed to interpret the distribution of full width at half maximum, which can help us understand the formation and glide process of the dislocations. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3115450]

Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er

Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al2O3 substrate at room temperature (RT) and 400degreesC. Both random (10degrees tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin filius were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction. (C) 2004 Elsevier B.V. All rights reserved.

Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.

Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition

Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 degrees C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results. (c) 2006 Elsevier B.V. All rights reserved.

Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction

We presented a series of symmetric double crystal X-ray diffraction (DCXD) measurements, (0 0 4), (2 2 0) and (2 - 2 0) diffraction, to investigate the strain relaxation in an InAs film grown on a GaAs(0 0 1) substrate. The strain tensor and rotation tensor were calculated according to the DCXD results. It is found that the misfit strain is relaxed nearly completely and the strain relaxation caused a triclinic deformation in the epilayer. The lattice parameter along the [1 1 0] direction is a little longer than that along the [1 - 1 0] direction. Furthermore, a significant tilt, 0.2 degrees, towards the [1 1 0] direction while a very slight one: 0.002 degrees, towards [1 - 1 0] direction were discussed. This anisotropic strain relaxation is attributed to the asymmetric distribution of misfit dislocations, which is also indicated by the variation of the full-width at half-maximum (FWHM) of (0 0 4) diffraction along four azimuth angles. (C) 1998 Elsevier Science B.V. All rights reserved.

Ultra-broadband optical parametric chirped-pulse amplification by matching of both group-velocity and pulse-front

Ultra-broadband optical parametric chirped-pulse amplification is analyzed based the compensation of phase-mismatch, which is achieved by matching of both group-velocity and pulse-front between signal and idler by the combination of the noncollinear-phase-match and pulse-front-tilt. The results show exactly matching of both group-velocity and pulse-front is the important criterion for constructing an UBOPCPA. Its general model is developed, in which the group velocities, noncollinear angles. spatial walk-off angles, linear angular spectral dispersion coefficients and pulse-front tilted angles are suitably linked to each other. Finally, specific numerical calculations and simulations are presented for beta-barium borate OPCPA with type-1 noncollinear angularly dispersed geometry. (C) 2005 Elsevier B.V. All rights reserved.

Pulse-front matched ultra-broadband optical parametric chirped pulse amplifier for sub-12 fs pulse generation

We propose a LBO-based ultra-broadband chirped pulse optical parametric amplifier employing pulse-front-matching to yield transform-limited sub-12-fs pulses. Measurement of the maximum possible gain bandwidth for the LBO-based OPCPA demonstrates more than 60nm gain bandwidth FWHM. For the generation of TL pulses by the use of this OPCPA, a suitable combination of OPCPA and PFM is first presented. The PFM pump geometry realizes tilt-free signal amplification, and permits this OPCPA to generate TL sub-12-fs pulses.

Novel moving-corner-cube-pair interferometer

A novel type of moving-corner-cube-pair interferometer is presented, and its principle and properties are studied. It consists of two moving corner cubes fixed together back to back as a single moving part (the moving-corner-cube-pair), four fixed plane mirrors and one beamsplitter. The optical path difference (OPD) is created by the straight reciprocating motion of the moving-corner-cube-pair, and the OPD value is eight times the physical shift value of the moving-corner-cube-pair. This novel type of interferometer has no tilt and shearing problems. It is almost ideal for the very-high-resolution infrared spectrometers.

Guiding of 150 keV O6+ ions through nanocapillaries in an uncoated Al2O3 membrane: special time dependence of the transmission profile width

This paper reports that the transmission of O6+ ions with energy of 150keV through capillaries in an uncoated Al2O3 membrane was measured, and agreements with previously reported results in general angular distribution of the transmitted ions and the transmission fractions as a function of the tilt angle well fitted to Gaussian-like functions were observed. Due to using an uncoated capillary membrane, our c is larger than that using a gold-coated one with a smaller value of E-p/q, which suggests a larger equilibrium charge Q(infinity) in our experiment. The observed special width variation with time and a larger width than that using a smaller E-p/q were qualitatively explained by using mean-field classical transport theory based on a classical-trajectory Monte Carlo simulation.

Self-assembled monolayer growth of octanol on mica: Atomic force microscopy and Fourier-transform infrared spectroscopy studies

The growth kinetics of self-assembled monolayers formed by exposing freshly cleaved mica to octanol solution has been studied by atomic force microscopy (AFM) and Fourier-transform infrared spectroscopy (FTIR). AFM images of samples immersed in octanol for varying exposure times showed that before forming a complete monolayer the octanol molecules aggregated in the form of small islands on the mica surface. With the proceeding of immersion, these islands gradually grew and merged into larger patches. Finally, a close-packed film with uniform appearance and few defects was formed. The thickness of the final film showed 0.8 nm in height, which corresponded to the 40degrees tilt molecular conformation of the octanol monolayer. The growth mechanisms consisted of nucleation, growth, and coalescence of the submonolayer films. The growth process was also confirmed by FTIR. And the surface coverage of the submonolayer islands estimated from AFM images and FTIR spectra as a function of immersion time was quite consistent.