High-pressure and-temperature synthesis and characterization of mixed valence perovskite oxides LaTi1-xMgxO3

Perovskite oxides LaTi1-xMgxO3 (x = 0.25, 0.5) were synthesized using high-pressure and-temperature method. LaTi0.75Mg0.25O3 is a new compound. This new synthesis route has some advantages. XRD analysis showed that the x = 0.25 sample belongs to cubic perovskite-type structure and the a = 0.5 sample belongs to orthorhombic perovskite-type structure. EPR measurement indicated that Ti ions were in mixed valence state of +3 and +4. IR measurement indicated that the vibration frequency and width of BO6 octahedron stretching vibration absorption band decreases with the increasing of x. The valence state of Ti ions can be altered by high-pressure and-temperature. (C) 2000 Elsevier Science S.A. All rights reserved.

Structural and magnetic properties of (PrxSm1-x)Mn2Si2

Crystallographic and magnetic properties of intermetallic compounds (PrxSm1-x) Mn2Si2 (x = 0 similar to 0.80) have been investigated by X-ray powder diffraction, XPS and magnetic measurements. All the compounds crystallize in ThCr2Si2-type structure. Substitution of Pr for Sm leads to the increase of the lattice constants and the transition from antiferromagnetism (AFM) to ferromagnetism (FM). The valence-fluctuation in the compounds was observed and the relation between the change of electron binding energy and magnetic properties was also discussed preliminarily.

Synthesis, characterization and catalytic behavior of layered mixed oxides La4BaCu5-xMnxO12 in NO reduction by CO

A series of sample having the stoichiometry La4BaCu5-xMnxO12 (x = 0 similar to 5) were prepared, characterized by XRD, IR and H-2 - TPR and used as catalyst for NO + CO reaction. It was found that they have 5 - layered ABO(3) - type structure. The results of H-2 - TPR showed that the Cu ion was more easily reduced while a part of them was replaced by Mn ions. Their catalytic behavior to NO + CO reaction was investigate, La4BaCu2Mn3O12 showed the highest catalyst activity for the reaction than the others. The reaction mechanism is discussed:the activity of the catalysts could be attributed to the Cu ions, but it was improved when Mn ions took the place of some Cu ions.

Structure of Vortex Dislocations in a Wake-type Flow

Structure and dynamical processes of vortex dislocations in a kind of wake-type flow are described clearly by vortex lines, which are directly constructed from data of three-dimensional direct numerical simulations of the flow evolution.

Gene structure of goose-type lysozyme in the mandarin fish Siniperca chuatsi with analysis on the lytic activity of its recombinant in Escherichia coli

A goose-type lysozyme (g-lysozyme) gene has been cloned from the mandarin fish (Siniperca chuatsi), with its recombinant protein expressed in Escherichia coli. From the first transcription initiation site, the mandarin fish g-lysozyme gene extends 1307 nucleotides to the end of the 3' untranslated region, and it contains 5 exons and 4 introns. The open reading frame of the glysozyme transcript has 582 nucleotides which encode a 194 amino acid peptide. The 5' flanking region of mandarin fish glysozyme gene shows several common transcriptional factor binding sites when compared with that from Japanese flounder (Paralichthys olivaceus). The recombinant mandarin fish g-lysozyme was expressed in E. coli by using pET-32a vector, and the purified recombinant g-lysozyme shows lytic activity against Micrococcus lysodeikticus. (c) 2005 Elsevier B.V All rights reserved.

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys

In this letter, we propose an n-type vertical transition bound-to-continuum Ge-SiGe quantum cascade structure utilizing electronic quantum wells in the L and F valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. Under a bias of 80 kV/cm, the carriers in the lower level are extracted by miniband transport and L - Gamma tunneling into the subband in the Gamma well of the next period. And then the electrons are injected into the upper level by ultrafast intervalley scattering, which not only effectively increases the tunneling rate and suppresses the thermal backfilling of electrons, but also enhances the injection efficiency of the upper level. The performance of the laser is discussed.

Analytical model of spin filtering effect and its experimental verification in a forward-biased iron-metal-Al2O3-n-type GaAs tunneling structure under optical spin orientation

An analytical model for the spin filtering transport in a ferromagnetic-metal - Al2O3 - n-type semiconductor tunneling structure has been developed, and demonstrated that the ratio of the helicity-modulated photo-response to the chopped one is proportional to the sum of the relative asymmetry in conductance of two opposite spin-polarized tunneling channels and the MCD effect of the ferromagnetic metal film. The performed measurement in an iron-metal/Al2O3/n-type GaAs tunneling structure under the optical spin orientation has verified that all the aspects of the experimental results are very well in accordance with our model in the regime of the spin filtering. After the MCD effect of the iron film is calibrated by an independent measurement, the physical quantity of Delta G(t)/G(t) (Delta G(t) = G(t)(up arrow) - G(t)(down arrow) is the difference of the conductance between two opposite spin tunneling channels, G(t) =( G(t)(up arrow) + G(t)(down arrow))/2 the averaged tunneling conductance), which concerns us most, can be determined quantitatively with a high sensitivity in the framework of our analytical model. Copyright (c) EPLA, 2008.

A Si-based tunable narrow-band flat-top filter with multiple-step-type Fabry-Perot cavity structure

In the optical network, the quick and accurate alignment with wavelength is an important issue during the channel detection. At this point, a filter having flat-top response characteristic is an effective solution. Based on multiple-step-type Fabry-Perot cavity structure, a novel all-Si-based thermooptical tunable flat-top filter with narrow-band has been fabricated, using our patent silicon-on-reflector bonding technology. The device demonstrated a 1-dB flat-top width of 1 nm, 3-dB band of 3 nm, free spectra range of 8 nm, and the tuning range of 4.6 nm was obtained under the applied voltage of 4 V.

Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-mu m-thick n-type GaAs layer

By integrating a three-barrier, two-well resonant tunneling structure with a 1.2-mu m-thick, slightly doped n-GaAs layer, a photoinduced voltage shift on the order of magnitude of 100 mV in resonant current peaks has been verified at an irradiance of low light power density. The 1.2-mu m-thick, slightly doped n-GaAs layer manifests itself of playing an important role in enhancing photoelectric sensitivity. (c) 2005 Elsevier B.V. All rights reserved.

A new type of photoelectric response in a double barrier structure with a wide quantum well

We have calculated the photoelectric response in a specially designed double barrier structure. It has been verilied that a transfer of the internal photovoltaic effect in the quantum well to the tunnelling transport through above-barrier quasibound states of the emitter barrier may give rise to a remarkable photocurrent.

An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point

In this paper, an n-type Si1-xGex/Ge (x >= 0.85) quantum cascade (QC) structure utilizing a deep Ge quantum well for electrons at the Gamma point is proposed. Based on linear interpolation, a conduction band offset at the Gamma point in a Si1-xGex/Ge ( x >= 0.85) heterostructure is presented, which is suitable for designing a QC laser. This approach has the advantages of a large conduction band offset at the Gamma point, a low lattice mismatch between the Si1-xGex/Ge ( x >= 0.85) active layers and the Si1-yGey ( y > x) virtual substrate, a small electron effective mass in the Gamma band, simple conduction energy band structures and a simple phonon scattering mechanism in the Ge quantum well. The theory predicts that if high-energy electrons are continuously injected into the Gamma band, a quasi-equilibrium distribution of electrons between the Gamma and L bands can be reached and held, i.e., electrons with a certain density will be kept in the Gamma band. This result is supported by the intervalley scattering experiments. In n-type Si1-xGex/Ge ( x >= 0.85) QC structures, population inversion between the laser's upper and lower levels is demonstrated.

A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure

Semiconductor optical amplifiers (SOAs) with n-type modulation-doped multiple quantum well structure have been investigated. The shortened carrier lifetime is derived from the PL spectrum and electrical modulation frequency response measurement. The carrier lifetime in semiconductor optical amplifiers with any n-type-2-modulated doping multiple quantum well structure is less than 60% of that in the undoped partner. The shortest measured carrier lifetime of 236 ps in the MD-MQW SOA with sheet carrier density of 3 x 10(12) cm(-2) was only 38% of that in the undoped MQW SOA, which can increase the wavelength conversion efficiency via four wave mixing by a factor of about 7 and switching speed via XGM and XPM applications by a factor of 2.63.

Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers

Based on the band-anticrossing model, the effect of the strain-compensated layer and the strain-mediated layer on the band structure, the gain, and the differential gain of GaInNAs-GaAs quantum well lasers have been investigated. Different band-filling mechanisms have been illustrated. Compared to the GaInNAs-GaAs single quantum well with the same wavelength,, the introduction. (if the strain-compensated layer and the strain-mediated layer increases the transparency carrier density. However, these multilayer structures help to suppress the degradation of the differential gain.

Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.