Effects of relative phase in an open ladder system without incoherent pumping

We studied effects of the relative phase between the probe and driving fields on the absorption and dispersion properties in an open three-level ladder system with spontaneously generated coherence but without incoherent pumping. It is shown that by the phase controlling, switching from absorption to lasing without inversion (LWI) and enhancing remarkablely LWI gain can be realized; large index of refraction with zero absorption and the electromagnetically induced transparency can be obtained. We also find that varying the atomic injection and exit rates has a considerable influence on the phase dependent-absorption property of the probe field, existent of the atomic injection and exit rates gives the necessary condition of the realization of LWI, getting LWI is impossible in the corresponding closed system without incoherent pumping. We studied effects of the relative phase between the probe and driving fields on the absorption and dispersion properties in an open three-level ladder system with spontaneously generated coherence but without incoherent pumping. It is shown that by the phase controlling, switching from absorption to lasing without inversion (LWI) and enhancing remarkablely LWI gain can be realized; large index of refraction with zero absorption and the electromagnetically induced transparency can be obtained. We also find that varying the atomic injection and exit rates has a considerable influence on the phase dependent-absorption property of the probe field, existent of the atomic injection and exit rates gives the necessary condition of the realization of LWI, getting LWI is impossible in the corresponding closed system without incoherent pumping.

Group velocity of probe light pulse in an open lambda system

The group velocity of the probe light pulse (GVPLP) propagating through an open Lambda-type atomic system with a spontaneously generated coherence is investigated when the weak probe and strong driving light fields have different frequencies. It is found that adjusting the detuning or Rabi frequency of the probe light field can realize switching of the GVPLP from subluminal to superluminal. Changing the relative phase between the probe and driving light. elds or atomic exit and injection rates can lead to GVPLP varying in a wider range, but cannot induce transformation of the property of the GVPLP. The absolute value of the GVPLP always increases with Rabi frequency of the driving light field increasing. For subluminal and superluminal propagation, the system always exhibits the probe absorption, and GVPLP is mainly determined by the slope of the steep dispersion.

High efficiency four-wave mixing induced by double-dark resonances in a five-level tripod system

A five-level tripod scheme is proposed for obtaining a high efficiency four-wave-mixing (FWM) process. The existence of double-dark resonances leads to a strong modification of the absorption and dispersion properties against a pump wave at two transparency windows. We show that both of them can be used to open the four-wave mixing channel and produce efficient mixing waves. In particular, higher FWM efficiency is always produced at the transparent window corresponding to the relatively weak-coupling field. By manipulating the intensity of the two coupling fields, the conversion efficiency of FWM can be controlled.

Transmission spectrum of a double quantum-dot-nanocavity system in photonic crystals

We investigate the optical transmission properties of a combined system which consists of two quantum-dot-nanocavity subsystems indirectly coupled to a waveguide in a planar photonic crystal. A Mollow-like triplet and the growth of sidebands are found, reflecting intrinsic optical responses in the complex microstructure.

Two-colour laser-induced electron dynamics in two-level quantum system

To attempt to control the quantum state of a physical system with a femtosecond two-colour laser field, a model for the two-level system is analysed as a first step. We investigate the coherent control of the two-colour laser pulses propagating in a two-level medium. Based on calculating the influence of the laser field with various laser parameters on the electron dynamics, it is found the electronic state can be changed up and down by choosing the appropriate laser pulses and the coherent control of the two-colour laser pulses can substantially modify the behaviour of the electronic dynamics: a quicker change of two states can be produced even for small pulse duration. Moreover, the oscillatory structures around the resonant frequency and the propagation features of the laser pulses depend sensitively on the relative phase of the two-colour laser pulses. Finally, the influence of a finite lifetime of the upper level is discussed in brief.

Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods

The atomistic pseudopotential quantum mechanical calculations are used to study the transport in million atom nanosized metal-oxide-semiconductor field-effect transistors. In the charge self-consistent calculation, the quantum mechanical eigenstates of closed systems instead of scattering states of open systems are calculated. The question of how to use these eigenstates to simulate a nonequilibrium system, and how to calculate the electric currents, is addressed. Two methods to occupy the electron eigenstates to yield the charge density in a nonequilibrium condition are tested and compared. One is a partition method and another is a quasi-Fermi level method. Two methods are also used to evaluate the current: one uses the ballistic and tunneling current approximation, another uses the drift-diffusion method. (C) 2009 American Institute of Physics. [doi:10.1063/1.3248262]

Loschmidt echo and Berry phase of a quantum system coupled to an XY spin chain: Proximity to a quantum phase transition

We study the Loschmidt echo (LE) of a coupled system consisting of a central spin and its surrounding environment described by a general XY spin-chain model. The quantum dynamics of the LE is shown to be remarkably influenced by the quantum criticality of the spin chain. In particular, the decaying behavior of the LE is found to be controlled by the anisotropy parameter of the spin chain. Furthermore, we show that due to the coupling to the spin chain, the ground-state Berry phase for the central spin becomes nonanalytical and its derivative with respect to the magnetic parameter lambda in spin chain diverges along the critical line lambda=1, which suggests an alternative measurement of the quantum criticality of the spin chain.

Design and characteristics of quantum cascade laser-based CO detection system

National High Technology Research and Development Program of China 2007AA03Z112；Program of Ministry of Education of China 20060183030；Program of Jilin Provincial Science and Technology Department of China 20070709；Program of Bureau of Science and Technology of Changchun City 2007107

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N

Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10(-10) after 44.4 km standard fiber transmission.

Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs

In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well lasers employing novel material system of Al-free active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in laser structure design, improvement of surface morphology and laser performance. We demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). The broad-area and ridge-waveguide laser devices are both fabricated. For 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170mA, a high slope efficiency of 1.0W/A and high output power of more than 3.5W are achieved. The temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (T-o) of 200-250K and a wavelength shift coefficient of 0.34nm/degrees C. For 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mW with GOD-free thermal roll-over characteristics is obtained.