97 resultados para periodic microstructures
Resumo:
A uniform submicron periodic square structure was fabricated on the surface of ZnO by a technique of two linearly polarized femtosecond laser beams with orthogonal polarizations ablating material alternately. The formed two-dimensional ordering submicron structure consists of close-packed submicron squares with a spacial periodicity of 290 nm, which arises from the intercrossing of two orthogonal submicron ripple structures induced by the two beams respectively. The result demonstrates a noninterference effect of two-beam ablation based on the alternate technique, which should come from the polarization-dependent enhancement of the subwavelength ripple structure and the large interval of two alternate pulses. This two-beam alternate ablation technique is expected to open up prospects for the submicron fabrication of wide-bandgap materials.
Resumo:
Microstructures with the total length of hundreds of mu m were induced by fixing the focal point of the femtosecond laser at a certain depth in the bulk of SrTiO3 crystal. By different combination of the focusing conditions with the laser parameters, different morphologies have been observed, such as void array, necklace-shaped structures, continuous/segmental filaments and etc. The possible mechanism of the formation of those diversiform structures is discussed.
Resumo:
利用飞秒激光振荡器产生的脉冲对镀有铬层的玻璃和石英基片进行微加工,发现两种样品表面均有波纹状的微突起结构产生。这些微突起结构离开样品表面的高度为10~300 nm不等,并且随着激光功率的增大而增加,在一定功率下达到饱和状态。它们的形貌、尺寸和高度取决于入射飞秒激光的能流以及飞秒脉冲的参数。通过化学方法证明了这些微突起结构是由玻璃和石英的主要成分SiO2组成的,并非样品表面的铬元素。此外,通过选取适当的飞秒激光功率和样品加工速度,制作了两种不同周期和线宽的光栅结构,显示出飞秒激光振荡器良好的加工性能。
Resumo:
New exact solutions of the (2 + 1)-dimensional double sine-Gordon equation are studied by introducing the modified mapping relations between the cubic nonlinear Klein-Gordon system and double sine-Gordon equation. Two arbitrary functions are included into the Jacobi elliptic function solutions. New doubly periodic wave solutions are obtained and displayed graphically by proper selections of the arbitrary functions.
Resumo:
We report on an optical interference method to fabricate array microstructures on the surface of silicon wafers by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed microstructures with micrometer-order were fabricated. The diffraction characteristics of the fabricated structures were evaluated. The present technique allows one-step realization of functional optoelectronic devices on silicon surface. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
Effects of alumina and chromium interlayers on the microstructure and optical properties of thin Ag films are investigated by using spectrophotometry, x-ray diffraction and AFM. The characteristics of Ag films in Ag/glass, Ag/Al2O3/glass and Ag/Cr/glass stacks are analysed. The results indicate that the insertion of an Al2O3 or Cr layer decreases the grains and influences the reflectance of Ag films. The reflectance of the Ag film can be increased by controlling the thickness of alumina interlayer. The stability of Ag films is improved and the adhesion of Ag films on glass substrates is enhanced by alumina as an interlayer.
Resumo:
We investigate the lifetime distribution functions of spontaneous emission from line antennas embedded in finite-size two-dimensional 12-fold quasi-periodic photonic crystals. Our calculations indicate that two-dimensional quasi-periodic crystals lead to the coexistence of both accelerated and inhibited decay processes. The decay behaviors of line antennas are drastically changed as the locations of the antennas are varied from the center to the edge in quasi-periodic photonic crystals and the location of transition frequency is varied.
Resumo:
We analyse the operation of a semiconductor nanowire-based memory cell. Large changes in the nanowire conductance result when the magnetization of a periodic array of nanoscale magnetic gates, which comprise the other key component of the memory cell, is switched between distinct configurations by an external magnetic field. The resulting conductance change provides the basis for a robust memory effect, which can be implemented in a semiconductor structure compatible with conventional semiconductor integrated circuits.
Resumo:
InAs quantum dots (QDs) are grown on the cleaved edge of an InxGa1-xAs/GaAs supperlattice experimentally and a good linear alignment of these QDs on the surface of an InxGa1-xAs layer has been realized. The modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic Monte Carlo method. Our results show that a good alignment of QDs can be achieved when the strain energy reaches 2% of the atomic binding energy. The simulation results are in excellent qualitative agreement with our experiments. (C) 2005 American Institute of Physics.
Resumo:
The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. Optimized growth conditions including substrate temperature, V/III ratio, growth rates, doping levels and interface control are summarized. Double crystal Xray diffraction and cross-sectional transmission electron microscopy disclose that our grown InP-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces. (C) 2005 Elsevier B.V. All rights reserved.
Resumo:
The modulation of superlattice band structure via periodic delta-doping in both well and barrier layers have been theoretically investigated, and the importance of interaction between the delta-function potentials in the well layers and those in the barrier layers on SL band structure have been revealed. It is pointed out that the energy dispersion relation Eq. (3) given in [G. Ihm, S.K. Noh, J.I. Lee, J.-S. Hwang, T.W. Kim, Phys. Rev. B 44 (1991) 6266] is an incomplete one, as the interaction between periodic delta-doping in both well and barrier layers had been overlooked. Finally, we have shown numerically that the electron states of a GaAs/Ga0.7Al0.3As superlattice can be altered more efficiently by intelligent tuning the two delta-doping's positions and heights. (c) 2007 Elsevier B.V. All rights reserved.
Resumo:
A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45 mu m is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.