Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition

Tensile-strained GaAsP/GaInP single quantum well (QW) laser diode (I-D) structures have been grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and related photoluminescence (PL) properties have been investigated in detail. The samples have the same well thickness of 16 nm but different P compositions in a GaAsP QW. Two peaks in room temperature (RT) PL spectra are observed for samples with a composition larger than 0.10. Temperature and excitation-power-dependent PL spectra have been measured for a sample with it P composition of 0.15. It is found that the two peaks have a 35 meV energy separation independent of temperature and only the low-energy peak exists below 85 K. Additionally, both peak intensities exhibit a monotonous increase as excitation power increases. Analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-hh). A theoretical calculation based oil model-solid theory, taking, into account the spin-orbit splitting energy, shows good agreement with our experimental results. The temperature dependence of PL intensity ratio is well explained using the spontaneous emission theory for e-hh and e-hh transitions. front which the ratio can be characterized mainly by the energy separation between the fill and Ill states.

Photovoltaic effects in InGaN structures with p-n junctions

InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. Using double-crystal X-ray diffraction measurements, it was found that the room temperature band gaps of p-InGaN and n-InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 x 10(-2) mA cm(-2) short-circuit current, 0.43 V open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a Schottky barrier and many defects of the p-InGaN film. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Substantial photo-response of InGaN p-i-n homojunction solar cells

InGaN p-i-n homojunction structures were grown by metal-organic chemical vapor deposition, and solar cells with different p-contact schemes were fabricated. X-ray diffraction measurements demonstrated that the epitaxial layers have a high crystalline quality. Solar cells with semitransparent p-contact exhibited a fill factor (FF) of 69.4%, an open-circuit voltage (V-oc) of 2.24 V and an external quantum efficiency (EQE) of 41.0%. On the other hand, devices with grid p-contact showed the corresponding values of 57.6%, 2.36 V, 47.9% and a higher power density. These results indicate that significant photo-responses can be achieved in InGaN p-i-n solar cells.

Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area

Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. Due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 nA under reverse bias up to 20V for devices with a large diameter of 200 mu m, which was among the largest device area for GaN-based p-i-n APDs yet reported. When the reverse bias exceeded 38V the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. With ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.

Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition

The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that the ( 0002) peak of GaNP shifts to a smaller angle with increasing P content. From the GaNP photoluminescence (PL) spectra, the red shifts from the band-edge emission of GaN are determined to be 73, 78 and 100 meV, respectively, in the GaNP alloys with the P contents of 1.5%, 5.5% and 7.5%. No PL peak or XRD peak related to GaP is observed, indicating that phase separation induced by the short-range distribution of GaP-rich regions in the GaNP layer has been effectively suppressed. The phase-separation suppression in the GaNP layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of P atoms in the GaNP layer.

Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition

Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83 eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.

Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices

ZnO nanocrystals were synthesized by hydrolysis in methanol. X-ray diffraction and photoluminescence spectra confirm that good crystallized ZnO nanoparticles were formed. Utilizing those ZnO nanoparticles and poly [2- methoxy-5 - (3',7'-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV), light emitting devices with indium tin oxide (ITO)/poly(3,4-oxyethyleneoxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS)/ ZnO:MDMO-PPV/Al and ITO/PEDOT:PSS/MDMO-PPV/Al structures were fabricated. Electrolummescence (EL) spectra reveal that EL yield of hybrid MDMO-PPV and ZnO nanocrystals devices increased greatly as compared with pristine MDMO-PPV devices. The current-voltage characteristics indicate that addition of ZnO nanocrystals can facilitate electrical injection and charge transport. The decreased energy barrier to electron injection is responsible for the increased efficiency of electron injection. (c) 2007 Elsevier B.V. All rights reserved.

The Early Diagenetic Formation of Organic Sulfur in the Sediments of Mangrove Lake, Bermuda

Due to a low mineral content, the sapropelic sediments depositing in Mangrove Lake, Bermuda, provide an excellent opportunity to explore for possible additions of sulfur to organic matter during the early stages of diagenesis. We evaluated early diagenetic organic sulfur transformations by monitoring the concentrations and stable isotopic compositions of a number of inorganic and organic sulfur pools, thereby accounting for all of the sulfur in the sediments. We have identified and quantified the following sulfur pools: porewater sulfate, porewater sulfide, elemental sulfur, pyrite sulfur, hydrolyzable organic sulfur (HYOS), chromium-reducible organic sulfur (CROS), and nonchromium-reducible organic sulfur (Non-CROS). Of the organic sulfur pools, the Non-CROS pool is by far the largest, followed by CROS, and finally HYOS. By 60 cm depth these pools contribute, respectively, to 85, 7.9, and 3.6% of the total solid phase sulfur. The HYOS pool is probably of biological origin and shows no interaction with the sulfur compounds produced during diagenesis. By contrast, CROS is produced, most likely, from the diagenetic addition of polysulfides to functionalized lipids in the upper, H2S-poor, elemental sulfur-rich, region of the sediment. A portion of this sulfur pool is unstable and decomposes on contact with the H2S-rich porewaters. The portion of CROS that remains in the sulfidic waters appears to readily exchange sulfur isotopes with H2S. While some of the Non-CROS pool is of biological origin, some is also formed by the diagenetic addition of sulfur to organic compounds in the upper H2S-poor region of the sediment. By contrast with CROS, Non-CROS is not diagenetically active in the H2S-rich porewaters. Overall, somewhere between 27 and 53 % of the organic sulfur buried in Mangrove Lake sediments is of diagenetic origin, with the remaining organic sulfur derived from biosynthesis. We extrapolate our Mangrove Lake results and calculate that in typical coastal marine sediments between 11 and 29 μmol g−1 of organic sulfur will form during early diagenesis, of which 2–5 μmol g−1 will be chromium reducible.

Synthesis and luminescence properties of hybrid organic-inorganic transparent titania thin film activated by in-situ formed lanthanide complexes

Stable transparent titania thin films were fabricated at room temperature by combining thenoyltrifluoroacetone (TTFA)-modified titanium precursors with amphiphilic triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO, P123) copolymers. The obtained transparent titania thin films were systematically investigated by IR spectroscopy, PL emission and excitation spectroscopy and transmission electron microscopy. IR spectroscopy indicates that TTFA coordinates the titanium center during the process of hydrolysis and condensation. Luminescence spectroscopy confirms the in-situ formation of lanthanide complexes in the transparent titania thin film.

An organic sensitizer with a fused dithienothiophene unit for efficient and stable dye-sensitized solar cells

We report a high molar extinction coefficient organic sensitizer for high efficiency dye-sensitized solar cells. In combination with a solvent-free ionic liquid electrolyte, we have demonstrated a similar to 7% cell showing an excellent stability measured under the thermal and light soaking dual stress. This is expected to have an important practical consequence on the production of flexible, low-cost, and lightweight DSC based on plastic matrix.

New Organic Sensitizer for Stable Dye-Sensitized Solar Cells with Solvent-Free Ionic Liquid Electrolytes

We report a high molar extinction coefficient metal-free sensitizer composed of a triarylamine donor in combination with the 2-(2,2'-bithiophen-5-yl)acrylonitrile conjugation unit and cyanoacrylic acid as an acceptor. In conjugation with a volatile acetonitrile-based electrolyte or a solvent-free ionic liquid electrolyte, we have fabricated efficient dye-sensitized solar cells showing a corresponding 7.5% or 6.1% efficiency measured under the air mass 1.5 global sunlight. The ionic liquid cell exhibits excellent stability during a 1000 h accelerated test under the light-soaking and thermal dual stress. Intensity-modulated photocurrent and photovolatge spectroscopies were employed along with the transient photoelectrical decay measurements to detail the electron transport in the mesoporous titania films filled with these two electrolytes.

Energy-Level and Molecular Engineering of Organic D-pi-A Sensitizers in Dye-Sensitized Solar Cells

A series of organic D-pi-A sensitizers composed of different triarylamine donors in conjugation with the thienothiophene unit and cyanoacrylic acid as an acceptor has been synthesized at a moderate yield. Through tuning the number of methoxy substituents on the triphenylamine donor, we have gradually red-shifted the absorption of sensitizers to enhance device efficiencies.