掺铒碲钨酸盐玻璃及其平面波导

研制了一种用于宽带波导放大器的掺铒碲钨酸盐激光玻璃材料，对玻璃热稳定性、光谱性质进行了表征，并在其上采用离子交换法制作了平面光波导．掺铒碲钨酸盐玻璃的转变温度Tg和析品开始温度Tx分别为377．1和488．5℃；荧光半高宽为52nm；应用McCumber理论，计算得出Er^3+离子4I13／2→^4I15／2跃迁在峰值波长1532nm的受激发射截面为0．91×10^-20cm^2．不同条件下制作了在632．8nm处多模的平面光波导，通过拟合得到Ag^+离子在300℃的有效扩散系数De为2．82×10^-1

Transparent Ni2+-doped lithium-alumino-silicate glass-ceramics for broadband near-infrared light source

Broadband infrared luminescence centred at around 1300 nm with full-width at half maximum of about 342 nm was observed from transparent Ni2+-doped lithium-alumino-silicate glass-ceramics embedded with beta-eucryptite crystallines. The room temperature fluorescent lifetime was 98 mu s. The transparent glass-ceramics may have potential applications in a widely tunable laser and a super-broadband optical amplifier for optical communications.

Fabrication and amplified spontaneous emission spectrum of Er3+-doped tellurite glass fiber with D-shape cladding

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A single-mode Er3+-doped tellurite glass fiber with D-shape cladding was fabricated in this work. The characterization of amplified spontaneous emission (ASE) from this newly fabricated Er3+-doped tellurite fibers are exhibited. When pumped at 980 nm, a very broad erbium ASE nearly 150 nm around 1.53 mum is observed. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of 2 mW from Er3+-doped tellurite fiber ASE source was obtained under the pump power of 660 mW. The broad 1.53 mum emission of Er3+ in tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers. (C) 2004 Elsevier B.V. All rights reserved.

Enhanced luminescence from transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics by Ga2O3 addition

Transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics without and with Ga2O3 were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga2O3 addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni2+-doped glass ceramics was largely enhanced by Ga2O3 addition which could mainly be caused by increasing of Ni2+ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga2O3 content was all more than 200 nm. The emission lifetime increased with the Ga2O3 content and the longest lifetime is about 250 mu s. The Ni2+-doped transparent glass ceramics with Ga2O3 addition have potential application as broadband optical amplifier and laser materials. (C) 2007 Elsevier Ltd. All rights reserved.

碱金属和碱土金属氟化物对掺Er^3＋氟磷酸盐玻璃光谱性质的影响

研究了碱金属和碱土金属离子修饰的掺Er^3＋氟磷酸盐玻璃的光谱性质，讨论了碱金属和碱土金属对铒氟磷玻璃的吸收和发射截面、荧光半高宽，Judd-Ofelt强度参数和上转换发光强度等光谱性质的影响，并与一些传统氧化物玻璃系统进行了比较．研究表明碱金属K^＋和碱土金属Sr^2＋掺杂高的玻璃更适宜用作光放大器基质．含12mol％K^＋的氟磷玻璃展现出7．83×10^-21cm^2的高发射截面和最小的荧光上转换强度；含23mol％Sr^2＋的氟磷玻璃则有7．58×10^-21cm^2的高发射截面、65nm的荧光半高

GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated a 1.60 mu m ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

1.55 mu m spot-size converter with monolithically integrated laser diode by conventional process

A novel 1.55 mum laser diode (LD) with monolithically integrated spot-size converter (SSC) is designed and fabricated using conventional photolithography and the chemical wet etching process. For the laser diode, a ridge double-core structure is employed. For the spot-size converter, a buried double-waveguide structure is incorporated. The laterally tapered active core is designed and optically combined with the thin passive core to control the size of the mode. The threshold current was measured to be 40 mA together with high slope efficiency of 0.35 W A(-1). The beam divergence angles in the horizontal and vertical directions were as small as 14.9degrees and 18.2degrees, respectively.

Ridge waveguide laser integrated with spot-size converter in a single step epitaxial for high coupling efficiency to single-mode fibres

A 1.55-mum laser diode integrated with a spot-size converter was fabricated in a single step epitaxial by using the conventional photolithography and chemical wet etching process. The device was constructed by a conventional ridge waveguide active layer and a larger passive ridge-waveguide layer. The threshold current was 40 mA together with high slope efficiency of 0.24 W/A. The beam divergence angles in the horizontal and vertical directions were as small as 12.0degrees x 15.0degrees, respectively, resulting in about 3.2-dB coupling losses with a cleaved optical fibre.

40-GHz wavelength tunable mode-locked SOA-based fiber laser with 40-nm tuning range

A 40-GHz wavelength tunable mode-locked fiber ring laser based oil cross-gain modulation in a semiconductor optical amplifier (SOA) is presented. Pulse trains with a pulse width of 10.5 ps at 40-GHz repetition frequency are obtained. The laser operates with almost 40-nm tuning range. The relationship between the key laser parameters and the output pulse characteristics is analyzed experimentally.

SOA-based actively mode-locked fiber ring laser by forward injecting an external pulse train

An actively mode-locked fiber ring laser based on cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA) is demonstrated to operate stably with a simple configuration. By forward injecting an easily-generated external pulse train, the mode-locked fiber laser can generate an optical-pulse sequence with pulsewidth about 6 ps and average output power about 7.9 mW. The output pulses show an ultra-low RMS jitter about 70.7 fs measured by a RF spectrum analyzer. The use of the proposed forward-injection configuration can realize the repetition-rate tunability from I to 15 GHz for the generated optical-pulse sequences. By employing a wavelength-tunable optical band-pass filter in the laser cavity, the operation wavelength of the designed SOA-based actively mode-locked fiber laser can be tuned continuously in a wide span between 1528 and 1565 nm. The parameters of external-injection optical pulses are studied experimentally to optimize the mode-locked fiber laser. (C) 2009 Elsevier B.V. All rights reserved.

Regenerative amplifier with continuously variable pulse duration used in an optical parametric chirped-pulse amplification laser system for synchronous pumping

A Nd:glass regenerative amplifier has been set up to generate the pumping pulse with variable pulse width for an optical parametric chirped-pulse amplification (OPCPA) laser system. Each pulse of the pulse train from a cw self-mode-locking femtosecond Ti:sapphire oscillator is stretched to approximate to300 ps at 1062 nm to be split equally and injected into a nonlinear crystal and the Nd:glass regenerative amplifier, as the chirped signal pulse train and the seed pulse train of the pumping laser system, respectively. By adjusting the cavity length of the regenerative amplifier directly, the width of amplified pulse could be varied continuously from approximate to300 ps to approximate to3 ns. The chirped signal pulse for the OPCPA laser system and the seed pulse for the pumping laser system come from the same oscillator, so that the time jitter between the signal pulse and the pumping pulse in optical parametric amplification stages could be <10 ps. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

High-conversion-efficiency and broadband tunable femtosecond noncollinear optical parametric amplifier

We build a compact high-conversion-efficiency and broadband tunable noncollinear optical parametric amplifier (OPA) in the infra-red (IR) pumped by a femtosecond Ti:sapphire CPA laser. The OPA consists of an internal seed of white-light continuum generator (WLG) and two noncollinear optical parametric amplifiers. The tunable wavelength range is from 1.2 mu m to 2.4 mu m for both signal and idle pulses. The total OPA efficiency in the last OPA stage reaches about 40% in a wider tunable spectral range (from 1.3 mu m to 1.7 mu m for signal pulse, from 1.5 mu m to 2.0 mu m for idle pulse respectively).