Stability and molecular modeling of triplex DNA inhibiting DNA binding protein binding to the core promoter of hepatitis B virus.

Two three-dimensional structure models of the 21nt oligodeoxyribonucleotides, CPI (G3TG-2TGT2G5TG2TGT) and CP3 (TGTG2TGST2GTG2TG3), were constructed by InsightII (MSI) software in IRIS Indigo2 (SGI) workstation using the crystal structure of TAT tripler formation as the template. The initial structures subsequently were minimized by molecular mechanics. The final structures were believed as the dominant conformation. The results showed that the energy of CP1 is lower than that of CP3, and the former is more stable than the latter. Moreover, the results further proved that the 21nt oligodeoxyribo-nucleotide CP1 stably combines with the core promoter (Cp) fragment of hepatitis B virus (HBV) to form a tripler DNA, and CP1 specifically inhibits a specific cellular factor (DNA binding protein) binding to Cp fragment. These results indicated that specific repression of gene transcription of HBV DNA might be possible by tripler-formation DNA.

De novo RNA synthesis and homology modeling of the classical swine fever virus RNA polymerase

Classical swine fever virus (CSFV) non-structural protein 5B (NS5B) encodes an RNA-dependent RNA polymerase (RdRp), a key enzyme which initiates RNA replication by a de novo mechanism without a primer and is a potential target for anti-virus therapy. We expressed the NS5B protein in Escherichia coli. The rGTP can stimulate de novo initiation of RNA synthesis and mutation of the GDD motif to Gly-Asp-Asp (GAA) abolishes the RNA synthesis. To better understand the mechanism of viral RNA synthesis in CSFV, a three-dimensional model was built by homology modeling based on the alignment with several virus RdRps. The model contains 605 residues folded in the characteristic fingers, palm and thumb domains. The fingers domain contains an N-terminal region that plays an important role in conformational change. We propose that the experimentally observed promotion of polymerase efficiency by rGTP is probably due to the conformational changes of the polymerase caused by binding the rGTP. Mutation of the GDD to GAA interferes with the interaction between the residues at the polymerase active site and metal ions, and thus renders the polymerase inactive. (c) 2005 Elsevier B.V. All rights reserved.

Modeling of cyanobacterial blooms in hypereutrophic Lake Dianchi, China

Compared with other approaches for modeling and predicting, artificial neural networks are more effective in describing complex and non-linear systems. The occurrence of cyanobacterial blooms has been a continuous and serious problem over the past decades in hypereutrophic Lake Dianchi. Yet, the main factor(s) initiating these blooms remain(s) unclear. During 2001-2002 at 40 sampling sites in Lake Dianchi, physicochemical parameters possibly relating to the blooms were measured. Parameters directly or indirectly relating to the cyanobacterial blooms were used as driving factors in a back-propagation network to model the concentration of chlorophyll a. According to sensitivity analysis, chemical oxygen demand was identified as a very significant environmental factor for algal growth in Lake Dianchi.

AMPS modeling of light J-V characteristics of a-Si based solar cells

AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University, has been used to module the light J-V characteristics of a-Si solar cells with a structure of TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/ metal. The effects of valence band offset and contact barriers at p/i and TOC/p, n/metal interfaces on the light J-V characteristics have been examined. The modeling has qualitatively categorized and explained the non-ideal J-V behaviors (rollover, crossover, Voc shift,and rollunder) observed in a-Si based solar cells.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

Generalized Viscoplastic Modeling of Debris Flow

Various concepts have been proposed or used in the development of rheological models for debris flow. The earliest model developed by Bagnold was based on the concept of the “dispersive” pressure generated by grain collisions. Bagnold’s concept appears to be theoretically sound, but his empirical model has been found to be inconsistent with most theoretical models developed from non-Newtonian fluid mechanics. Although the generality of Bagnold’s model is still at issue, debris-flow modelers in Japan have generally accepted Takahashi’s formulas derived from Bagnold’s model. Some efforts have recently been made by theoreticians in non-Newtonian fluid mechanics to modify or improve Bagnold’s concept or model. A viable rheological model should consist both of a rate-independent part and a rate-dependent part. A generalized viscoplastic fluid (GVF) model that has both parts as well as two major rheological properties (i.e., the normal stress effect and soil yield criterion) is shown to be sufficiently accurate, yet practical, for general use in debris-flow modeling. In fact, Bagnold’s model is found to be only a particular case of the GVF model. Analytical solutions for (steady) uniform debris flows in wide channels are obtained from the GVF model based on Bagnold’s simplified assumption of constant grain concentration.

Modeling of a coal-fired slagging combustor: Development of a slag submodel

In a slagging combustor or furnace, the high combustion temperature makes the molten slag layer cover the wall and capture the particles. If these particles contain combustible matter, they will continue to burn on the running slag. As a result, the total amount of ash deposition will be much greater than that in dry-wall combustors and the total heat flux through the deposition surface will change greatly. Considering the limitations of existing simulation methods for slagging combustion, this paper introduces a new wall burning model and slag flow model from the analysis; of particle deposition phenomena. Combined with a conventional combustion simulation program, the total computational frame is introduced. From comparisons of simulation results from several kinds of methods with experimental data, the conclusion is drawn that the conventional simulation methods are not very suitable for slagging combustion and the wall burning mechanism should be considered more thoroughly.

MODELING OF ELECTRON-TUNNELING TIMES IN ASYMMETRIC DOUBLE QUANTUM-WELLS

A scattering process modeled by an imaginary potential V(I) in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V(I) approximately -5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.

Transient photocurrent investigation of photo-processes of lattice-matched MQW GaAs/AlxGa1-xAs electrode

Transient photocurrents induced by short light pulses at lattice-matched GaAs/AlxGa1-xAs multiple quantum well (MQW) electrodes were studied as a function of electrode potential. Dual exponential photocurrent decay transients were observed at various potentials. By analysis of the dual exponential decay transients, information on steady state photocurrents (I-s), surface collection of photoexcited minority carriers (G(0)) and lifetimes of surface states (T-s) was obtained. The kinetic behaviors of photoprocesses at illuminated MQW/electrolyte interface were discussed.