COMPARISON BETWEEN THE INFLUENCES OF LAYER THICKNESSES AND ALAS MOLE FRACTION-X ON VERTICAL-CAVITY SURFACE-EMITTING LASERS

Based on the n(x, lambda), the calculation of the reflection spectrum for vertical cavity surface emitting lasers shows that the deviation of the central wavelength caused by the change of layer thickness is much more than that caused by the change of AlAs mole fractions. Therefore the control of the MBE growth rate is very important.

INFLUENCES OF ALLOY DISORDER AND INTERFACE ROUGHNESS ON OPTICAL-SPECTRA OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS

We present studies of alloy composition and layer thickness dependences of excitonic linewidths in InGaAs/GaAs strained-layer quantum wells grown by MBE, using both photoluminescence and optical absorption. It is observed that linewidths of exciton spectra increase with indium content and well size. Using the virtual crystal approximation, the experimental data are analyzed. The results obtained show that the alloy disorder is the dominant mechanism for line broadening at low temperature. In addition, it is found that the absorption spectra related to light hole transitions have varied from a peak to a step-like structure as temperature increases. This behavior can be understood by the indirect space transitions of light holes.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Influences of the isospin-dependence of in-medium nucleon nucleon cross-section and momentum dependent interaction on isoscaling parameter

Influences of the isospin-dependent in-medium nucleon nucleon cross-section (sigma(iso)(NN) and momentum-dependent interaction (MDI) on the isoscaling parameter a are investigated for two central collisions Ca-40 +Ca-40 and Ca-60+ Ca-60. These collisions are with isospin dependent quantum molecular dynamics in the beam energy region from 40 to 60 MeV/nucleon. The isotope yield ratio R-21 (N, Z) for the above two central collisions depends exponentially on the neutron number N and proton number Z of isotopes, with an isoscaling. In particular, the isospin-dependent (sigma(iso)(NN) and MDI induce an obvious de crease of the isoscaling parameter a. The mechanism of the decreases of a by both sigma(iso)(NN) and MDI are studied respectively.

Influences of Gd on the microstructure and strength of Mg-4.5Zn alloy

Microstructure and mechanical properties of peak-aged Mg-4.5Zn-xGd (x=0, 0.5, 1.0 and 1.5 wt.%) alloys have been investigated. The results showed that the grain size of the alloys was refined gradually with increasing Gd. Mg5Gd and Mg3Gd2Zn3 phases were found in the Gd-containing alloys. The strengths were greatly improved with Gd additions, and the highest strength level was obtained in the Mg-4.5Zn-1.5Gd alloy, in which the ultimate tensile strength and yield strength were 231 MPa and 113 MPa, respectively.