A Linear Stability Analysis Of Large-Prandtl-Number Thermocapillary Liquid Bridges

A linear stability analysis is applied to determine the onset of oscillatory thermocapillary convection in cylindrical liquid bridges of large Prandtl numbers (4 <= Pr <= 50). We focus on the relationships between the critical Reynolds number Re-c, the azimuthal wave number m, the aspect ratio F and the Prandtl number Pr. A detailed Re-c-Pr stability diagram is given for liquid bridges with various Gamma. In the region of Pr > 1, which has been less studied previously and where Re, has been usually believed to decrease with the increase of Pr, we found Re-c exhibits an early increase for liquid bridges with Gamma around one. From the computed surface temperature gradient, it is concluded that the boundary layers developed at both solid ends of liquid bridges strengthen the stability of basic axisymmetric thermocapillary convection at large Prandtl number, and that the stability property of the basic flow is determined by the "effective" part of liquid bridge. (c) 2008 Published by Elsevier Ltd on behalf of COSPAR.

Hydrothermal Instability Of Thermocapillary Convection In Large-Prandtl-Number Liquid Bridges Under Microgravity

Linear stability analysis was performed to study the mechanism of transition of thermocapillary convection in liquid bridges with liquid volume ratios ranging from 0.4 to 1.2, aspect ratio of 0.75 and Prandtl number of 100. 2-D governing equations were solved to obtain the steady axi-symmetric basic flow and temperature distributions. 3-D perturbation equations were discretized at the collocation grid points using the Chebyshev-collocation method. Eigenvalues and eigenfunctions were obtained by using the Q-R. method. The predicted critical Marangoni numbers and critical frequencies were compared with data from space experiments. The disturbance of the temperature distribution on the free surface causes the onset of oscillatory convection. It is shown that the origin of instability is related to the hydrothermal origin for convections in large-Prandtl-number liquid bridges. (C) 2007 COSPAR. Published by Elsevier Ltd. All rights reserved.

Diffusion dominated process for the crystal growth of a binary alloy

The pure diffusion process has been often used to study the crystal growth of a binary alloy in the microgravity environment. In the present paper, a geometric parameter, the ratio of the maximum deviation distance of curved solidification and melting interfaces from the plane to the radius of the crystal rod, was adopted as a small parameter, and the analytical solution was obtained based on the perturbation theory. The radial segregation of a diffusion dominated process was obtained for cases of arbitrary Peclet number in a region of finite extension with both a curved solidification interface and a curved melting interface. Two types of boundary conditions at the melting interface were analyzed. Some special cases such as infinite extension in the longitudinal direction and special range of Peclet number were reduced from the general solution and discussed in detail.

Transition from steady to oscillatory convection with chaotic feature in thermocapillary convection

The transition process from steady to turbulent convection via subharmonic bifurcation in thermocapillary convection of half floating zone was studied by numerical simulation and experimental test. Both approaches gave structure of period doubling bifurcations in the present paper, and the Feigenbaum universal law was checked for the system of thermocapillary convection.

Effects of high-frequency vibration on critical marangoni number

The influence of vibration on thermocapillary convection and critical Marangoni number in liquid bridge of half floating zone was discussed for the low frequency range 0.4-1.5 Hz and the intermediate frequency range 2.5-15 Hz in our previous papers. This paper extends the study to high frequency range 15-100Hz. This ground based experiment was completed on the deck of an electromagnetic vibration machine. The results of our experiment shows when the frequency of the applied acceleration is high enough, the amplitude of the time varying part of the temperature response is disappear and the shape of the free surface of the liquid bridge exhibits no fluctuations due to inertia. The critical Marangoni number which is defined to describe the transitions from a peroidical convection in response to vibration to an oscillatory convection due to internal instability is nearly the same as the critical Marangoni number for oscillatory flow in the absence of vibration.

Experimental-study of free-surface oscillations of a liquid bridge by optical diagnostics

A non-contact optical method, consisting of a projecting grating technique for the relative measurement of a surface, and a technique of absolute measurement at a fixed point on the surface, are applied to measure the free surface vibration in a liquid bridge of half floating zone with small typical scale of a few of mm for emphasizing the thermocapillary effect in comparison with the effect of buoyancy. The radii variations in both longitudinal and azimuthal directions are obtained, and, then, the feature of surface wave could be analyzed in detail. The results show that there are values of principal oscillatory frequencies at different positions of free surface. The amplitudes of surface waves in longitudinal and azimuthal directions are several mum and several tenths of mum in order of magnitude. The phase of two-dimensional surface waves is different at different height for fixed cross section or at different azimuthal angle for fixed height. The wave features are discussed for the cases of typical parameter ranges.

Effects of g-jitter on the critical marangoni number

A half floating zone is fixed on a vibrational deck, which supports a periodical applied acceleration to simulate the effect of g-jitter. This paper deals with the effects of g-jitter on the fluid fields and the critical Marangoni number, which describes the transition from a forced oscillation of thermocapillary convection into an instability oscillatory convection in a liquid bridge of half floating zone with top rod heated. The responses of g-jitter field on the temperature profiles and flow pattern in the liquid bridge were obtained experimentally. The results indicated that the critical Marangoni number decreases with the increasing of g-jitter effect and is slightly smaller for higher frequency of g-jitter with fixed strength of applied gravity.

Experimental study on oscillatory thermocapillary convection

The transition processes from steady flow into oscillatory flow in a liquid bridge of the half floating zone are studied experimentally. Two methods of noncontacted diagnoses are developed to measure the distribution of critical Marangoni numbers described by the onset of the oscillation st the free surface of the liquid bridge.The experimental results obtained for both cases of the upper rod heated and the lower rod heated agree with the prediction by Rayleigh's instability theory.The sensitive relations between the relatively fat or slender liquid bridge and the onset of oscillatory convection are also discussed to reveal the insight of the pressure distribution near the free surface. The experiments have been performed in a small liquid bridge, where the Bond number is much smaller than 1, and the results can be used to simulate the experiment in the microgravity environment.

Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn

Tin oxide doped beta-Ga2O3 single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. beta-Ga2O3 single crystals doped with different Sn4+ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn4+ concentrations and annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Growth and spectral characterization of beta-Ga2O3 single crystals

Beta gallium oxide (beta-Ga2O3) single crystals were grown by the floating zone technique. The absorption spectra and the luminescence of the crystals were measured. The absorption spectra showed an intrinsic short cutoff edge around 260 nm with two shoulders at 270 and 300 nm. Not only the characteristic UV (395 nm), blue (471 nm) and green (559 nm) lights, but also the red (692 nm) light can be seen in the emission spectra. The deep UV light was attributed to the existing of quantum wells above the valence band and the red light was owed to the electron-hole recombination via the vicinity donors and acceptors. (c) 2006 Elsevier Ltd. All rights reserved.

β-Ga2O3单晶浮区法生长及其光学性质

用浮区法生长得到了宽禁带半导体材料β-Ga2O3单晶，对其吸收光谱、荧光光谱进行了分析。解释了禁带部分展宽的原因。并研究了Sn^4＋和Ti^4＋的掺杂对其紫外吸收边影响。β-Ga2O3单晶的荧光谱不仅观察到了3个特征峰：紫外光（395nm）、蓝光（471nm）、绿光（559nm），还观察到了在277和297nm的紫外光和692nm的红光荧光发射。

Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates

Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts. (C) 2001 American Institute of Physics.

Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

The effects of gravity and crystal orientation on the dissolution of GaSb into InSb melt and the recrystallization of InGaSb were investigated under microgravity condition using a Chinese recoverable satellite and under normal gravity condition on earth. To investigate the effect of gravity on the solid/liquid interface and compositional profiles. a numerical simulation was carried out. The InSb crystal melted at 525 degrees C and then a part of GaSb dissolved into the InSb melt during heating to 706 degrees C and this process led to the formation of InGaSb solution. InGaSb solidified during the cooling process. The experimental and calculation results clearly show that the shape of the solid/liquid interface and compositional profiles in the solution were significantly affected by gravity. Under microgravity, as the Ga compositional profiles were uniform in the radial direction. the interfaces were almost parallel. On the contrary, for normal gravity condition, as large amounts of Ga moved up in the upper region due to buoyancy, the dissolved zone broadened towards gravitational direction. Also. during the cooling process, needle crystals of InGaSb started appearing and the value of x of InxGa1-xSb crystals increased with the decrease of temperature. The GaSb with the (111)B plane dissolved into the InSb melt much more than that of the (111)A plane. (C) 2000 Elsevier Science B.V. All rights reserved.