211 resultados para ionene, electrostatic self assembly, nanoparticles


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The transmission of electrons through a hierarchical self-assembly of GaAs/AlxGa(1-)xAs quantum dots (QDs) is calculated using the coupled-channel recursion method. Our results reveal that the number of conductance peaks does not change when the barrier widths change, but the intensities decrease as the barrier widths increase. The conductance peaks will shift towards low Fermi energies as the transverse width of GaAs QD increases, as the thickness of GaAs quantum well increases, or as the height of GaAs QDs decreases. Our calculated results may be useful in the application of QDs to photoelectric devices. (c) 2005 American Institute of Physics.

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Quantum-confined Stark effects in GaAs/AlxGa1-xAs self-assembled quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. In our calculation, the effect of finite offset, valence-band mixing, the effects due to the different effective masses of electrons and holes in different regions, and the real quantum dot structures are all taken into account. The results show that the electron and hole energy levels and the optical transition energies can cause blueshifts when the electric field is applied along the opposite to the growth direction. Our calculated results are useful for the application of hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots to photoelectric devices. (c) 2005 American Institute of Physics.

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The electronic structures in the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated. In our calculation, the effect of finite offset, valence-band mixing, the effects due to the different effective masses of electrons and holes in different regions, and the real quantum dot structures are all taken into account. The results show that (1) electronic energy levels decrease monotonically, and the energy difference between the energy levels increases as the GaAs quantum dot (QD) height increases; (2) strong state mixing is found between the different energy levels as the GaAs QD width changes; (3) the hole energy levels decrease more quickly than those of the electrons as the GaAs QD size increases; (4) in excited states, the hole energy levels are closer to each other than the electron ones; (5) the first heavy- and light-hole transition energies are very close. Our theoretical results agree well with the available experimental data. Our calculated results are useful for the application of the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots to photoelectric devices.

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In recent years, growth of GaN-based materials-related quantum dots has become a hot topic in semiconductor materials research. Considerable efforts have been devoted to growth of self-assembled quantum dots of GaN-based materials via MOCVD (Metal Organic Chemical Vapor Deposition) and there are a lot of relevant literatures. There is, however, few review papers for the topic. In this paper, different experimental methods for fabrication of quantum dots of GaN-based materials via MOCVD are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research.

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A simple one-pot method is developed to prepare size-and shape-controlled copper(I) sulfide (Cu2S) nanocrystals by thermolysis of a mixed solution of copper acetylacetonate, dodecanethiol and oleylamine at a relatively high temperature. The crystal structure, chemical composition and morphology of the as-obtained products are characterized by powder x-ray diffraction (PXRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The morphology and size of the Cu2S nanocrystals can be easily controlled by adjusting the reaction parameters. The Cu2S nanocrystals evolve from spherical to disk-like with increasing reaction temperature. The spherical Cu2S nanocrystals have a high tendency to self-assemble into close-packed superlattice structures. The shape of the Cu2S nanodisks changes from cylinder to hexagonal prism with prolonged reaction time, accompanied by the diameter and thickness increasing. More interestingly, the nanodisks are inclined to self-assemble into face-to-face stacking chains with different lengths and orientations. This one-pot approach may extend to synthesis of other metal sulfide nanocrystals with different shapes and sizes.

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Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.

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A kind of carbon nanotube bundle has been synthesized by a simple one-step solvothermal reaction between Na and hexachlorobenzene (HCB) using NiCl2 as catalyst precursor. Before the reaction, NiCl2 was initially dispersed ultrasonically in cyclohexane then prereduced by Na at 230degreesC to produce small Ni particles in reduced state. The tubes thus-produced have a uniform outer diameter of about 20 nm, an inner diameter of 4 nm, and are highly ordered assembled as bundles which have a 2D hexagonal arrangement as proven by SAXS and TEM experiments.

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Self-assembled behavior of rod-terminally tethered three-armed star-shaped coil block copolymer melts was studied by applying self-consistent-field lattice techniques in three-dimensional (3D) space. Similar to rod-coil diblock copolymers, five morphologies were observed, i.e., lamellar, perforated lamellar, gyroidlike, cylindrical and sphericallike structures, while the distribution of the morphologies in the phase diagram was dramatically changed with respect to that Of rod-coil diblock copolymers.

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In the presence of NH3-Ag+-NH3, the calix[4]arenes can be induced into dimeric nanocapsules, which can be used as building units constructing a 3D molecular architecture with the appropriate secondary ligands and metal ions.

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A novel porous material constructed from p-sulfonatocalix[4]arene molecules and a Ag-I coordination polymer has been structurally characterized. The porous supramolecular complex features a bilayer arrangement of p-sulfonatocalix[4]arene molecules linked by a Ag-I-hmt (hmt: hexamethylene- tetramine) coordination polymer through metal-ligand bonding, hydrogen bonding and host-guest interactions.

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Self-assembled behavior of symmetric ABA rod-coil-rod triblock copolymer melts is studied by applying self-consistent-field lattice techniques in three-dimensional space. The phase diagram is constructed to understand the effects of the chain architecture on the self-assembled behavior. Four stable structures are observed for the ABA rod-coil-rod triblock, i.e., spherelike, lamellar, gyroidlike, and cylindrical structures. Different from AB rod-coil diblock and BAB coil-rod-coil triblock copolymers, the lamellar structure observed in ABA rod-coil-rod triblock copolymer melts is not stable for high volume fraction of the rod component (f(rod)=0.8), which is attributed to the intramolecular interactions between the two rod blocks of the polymer chain.

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A novel method to tune surface wettability rapidly and reversibly has been developed by ion exchange of the counterions at the surface of a multilayer film assembled via electrostatic interaction.