When is `partial' adequate? A logic-based proof technique using partial specifications

A technique is presented for ascertaining when a (finite-state) partial process specification is adequate, in the sense of being specified enough, for contexts in which it is to be used. The method relies on the automatic generation of a modal formula from the partial specification; if the remainder of the network satisfies this formula, then any process that meets the specification is guaranteed to ensure correct behavior of the overall system. Using the results, the authors develop compositional proof rules for establishing the correctness of networks of parallel processes and illustrate their use with several examples

基于逻辑"或"约束优化的实时系统设计

标准约束优化问题的等式或不等式约束之间是逻辑“与”关系，目前已经有很多高效、收敛的优化算法．但是，在实际应用中有很多更一般的约束优化问题，其等式或不等式约束之间不仅包含逻辑“与”关系，而且还包含逻辑“或”关系，现有的针对标准约束优化问题的各种算法不再适用，给出一种新的数学变换方法，把具有逻辑“或”关系的不等式约束转换为一组具有逻辑“与”关系的不等式，并应用到实时单调速率调度算法的可调度性判定充要条件中，把实时系统设计表示成混合布尔型整数规划问题，利用经典的分支定界法求解．实验部分指出了各种方法的优缺点．

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT

A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.