DISORDER POINT FOR 2D ELECTRONS IN A HALF-FILLED LANDAU-LEVEL

Short-range correlations of two-dimensional electrons in a strong magnetic field are shown to be triangular in nature well below half-filling, but honeycomb well above half-filling. The half-filling point is thus proposed, and qualitatively confirmed by three-body correlation calculations, to be a new type of disorder point where short-range correlations change character. A wavefunction study also suggests that nodes become unbound at half-filling. Evidence for incompressibility but deformability of the half-filling state earlier suggested by Fano, Ortolani and Tosatti, is also presented and found to be in agreement with recent experiments.

Effects of point defects on lattice parameters of semiconductors

A model for analyzing the correlation between lattice parameters and point defects in semiconductors has been established. The results of this model for analyzing the substitutes in semiconductors are in accordance with those from Vegard's law and experiments. Based on this model, the lattice strains caused by the antisites, the tetrahedral and octahedral single interstitials, and the interstitial couples are analyzed. The superdilation in lattice parameters of GaAs grown at low temperatures by molecular-beam epitaxy can be interpreted by this model, which is in accordance with the experimental results. This model provides a way of analyzing the stoichiometry in bulk and epitaxial compound semiconductors nondestructively.

Flash-lamp-pumped picosecond Nd:YAG regenerative amplifier

A flash-lamp-pumped Nd

Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer

A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained.

A new half-flash architecture for high speed video ADC

In this paper a new half-flash architecture for high speed video ADC is presented. Based on a high speed single-way analog switch circuit, this architecture effectively reduces the number of elements. At the same lime no sacrifice of speed is needed compared with the normal half-flash structure.

TI TMS320C6713 DSP板Flash二级装载程序设计

DSP系统的程序都是保存在非易失性存储器中,系统启动的时候,程序加载到系统的RAM中去执行。本文详细描述了TITMS320C6713DSP板以Flash作为引导存储器,采用二级装载的办法来实现程序的加载,并给出了数据传输的代码片断。文章介绍的这种二级装载的方法也可以应用于C6000系列其他型号的处理器。

AT91RM9200与Compact Flash接口电路及其驱动程序设计

介绍了基于ARM920T内核的AT91RM9200处理器与Compact Flash卡的接口电路以及Compact Flash卡驱动程序的编写、调试.提出了一种适合数据流量大、实时性能要求高的现场实时数据采集、事后PC机做分析处理的实时数据采集系统。

Isospin dependence of the nuclear equation of state near the critical point

We discuss experimental evidence for a nuclear phase transition driven by the different concentrations of neutrons to protons. Different ratios of the neutron to proton concentrations lead to different critical points for the phase transition. This is analogous to the phase transitions occurring in He-4-He-3 liquid mixtures. We present experimental results that reveal the N/A (or Z/A) dependence of the phase transition and discuss possible implications of these observations in terms of the Landau free energy description of critical phenomena.