Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Boron isotopic fractionation during seawater evaporation

IEECAS SKLLQG

Luminescent Boron-Contained Ladder-Type pi-Conjugated Compounds

Four diboron-contained ladder-type pi-conjugated compounds 1-4 were designed and synthesized. Their thermal, photophysical, electrochemical properties, as well as density functional theory calculations, were fully investigated. The single crystals of compounds 1 and 3 were grown, and their crystal structures were determined by X-ray diffraction analysis. Both compounds have a ladder-type g-conjugated framework. Compounds I and 2 possess high thermal stabilities, moderate solid-state fluorescence quantum yields, as well as stable redox properties, indicating that they are possible candidates for emitters and charge-transporting materials in electroluminescent (EL) devices. The double-layer device with the configuration of [ITO/NPB (40 nm)/1 or 2 (70 nm)/LiF (0.5 nm)/Al (200 nm)] exhibited good EL performance with the maximum brightness exceeding 8000 cd/m(2).

White organic electroluminescence based on a new boron complex

A bright blue boron complex BPh2(pybm) containing 2-(2-pyridyl)benzimidazole ligand was designed and synthesized by using N, N-bidentate ligand instead of N, O-bidentate one such as 8-quinolinol. For three-layer LED devices with the configuration of ITO/NPB/BPh2(pybm)/Alq(3)/LiF/Al, the white light emission covering the whole visible region from 400 to 750 nm with the maximum brightness of 110 cd/m(2) and the luminous efficiency of 0.8 cd/A was observed.

Mass spectral study of extractable La- and Lu-containing fullerenes

Mass spectra of LaxC2n (x = 1,2), well known endohedral metallofullerenes, and Lu2C2n (2n = 76-112), new members of extractable metallofullerenes, were studied. Positive-ion laser desorption/ionization (LDI) and electron impact (EI) mass spectra indicated that lutetium is a special lanthanide that prefers to form dilutetium fullerenes by the are-burning method. However, the signals for Lu2C2n become very weak in negative-ion LDI-MS, this is different from La-2@C-80, which has close relative abundances in positive- and negative-ion MS. The distinction between Lu2C2n and La-2@C-80 in the negative-ion LDI mass spectra may be due to the different structures of La- and Lu-containing fullerenes. (C) 1997 by John Wiley & Sons, Ltd.