溶藻细菌DC-L14的分离、鉴定与溶藻特性

从滇池蓝藻水华集聚区分离获得一株溶藻细菌DC-L14,经16SrDNA序列分析鉴定为Lysinibacillus fusiformis;小白鼠毒性试验初步显示该菌株未产生小白鼠中毒毒素;该菌能使铜锈微囊藻905聚集成团,沉于瓶底,最终黄化;该菌作用4d,使惠氏微囊藻107、绿色微囊藻102、水华束丝藻和水华鱼腥藻的叶绿素a下降率最高为70.1%,最低为65.5%,平均为67.2%;当细菌处于稳定生长期时溶藻效果最强,共培养4d能使铜锈微囊藻905的叶绿素a含量下降82.1%;离心沉降后检测,发现菌体本身无

溶藻细菌DC-L5的分离、鉴定及其溶藻特性

从滇池蓝藻水华集聚区分离获得一株溶藻细菌DC-L5,通过形态及16S rDNA测序分析鉴定为短小芽孢杆菌。用小白鼠进行生物安全实验,小白鼠无中毒症状。研究表明当细菌处于对数生长期时溶藻效果最强,共培养5d使铜锈微囊藻的叶绿素a含量下降83.33%,使惠氏微囊藻、绿色微囊藻、水华束丝藻和水华鱼腥藻4种蓝藻叶绿素a下降率最高为67.6%,最低为58.5%,平均为62.25%。离心沉降后,发现沉淀菌体和无菌上清液对铜锈微囊藻都有溶藻效果,但溶藻效果不及原菌液,推测DC-L5可能是通过直接接触使藻细胞凝聚下沉及进

Analysis of paralytic shellfish toxins in Aphanizomenon DC-1 from Lake Dianchi, China

Lake Dianchi is in Yunnan Province in southwestern China. In recent years, significant cyanobacterial blooms have occurred in this lake nearly every year because of eutrophication. Monitoring data for the past 5 years acquired by our research group showed that phytoplankton composition alternated between species of Microcystis sp. during warm seasons and those of Aphanizomenon sp. during cool seasons. In March 2003, when phytoplankton composition was highly dominated by Aphanizomenon sp., samples were taken from the lake for toxin detection and immediate strain isolation. A mouse bioassay with extracts from the lyophilized field material showed obvious intoxication from paralytic shellfish poisons (PSPs), and all mice died within 30 min. Further analysis of both field and isolated algal strain Aphanizomenon DC-1 by the postcolumn HPLC-FLD method confirmed its PSP-producing ability The analogues found in the extracts from the field material were neoSTX, dcSTX, and dcGTX3, with contents of 2.279, 1.135, and 0.547 ng/mg DW, respectively. Under laboratory culture condition, toxin content in the Aphanizomenon strain DC-1 varied greatly during different growth phases, with two peaks: in the early-exponential and late-stationary growth phases. When the culture grew at a relatively high rate during the mid- to late-exponential growth phase, toxin content declined gradually. Moreover, the types of toxin in the DC-1 strain varied greatly during a single culture cycle. The HPLC results showed that dcSTX was the only toxin isomer detected throughout the culture period, and its level remained stable. On the other hand, dcGTX2 and GTX4 were the major toxins during the early-exponential and stationary phases, respectively. This article presents the first data on the identification and detection of paralytic shellfish toxins from cyanobacteria in Lake Dianchi. As far as we know, this is also the first report of this type of toxin in inland water bodies in China. Our study indicates the threat associated with PSP toxins in Lake Dianchi and suggests that necessary measures and programs for control are urgently needed to prevent the spread of toxic cyanobacterial blooms. (c) 2006 Wiley Periodicals, Inc.

嵌入式数控DC-DC 转换器新结构研究 原钢 指导教师：石寅研究员，博士生导师 嵌入式数控DC-DC 转换器新结构研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SOS/CMOS 模拟电路设计研究及其在DC/DC 转换器中的应用

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SOS-CMOS DC-DC变换器研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage

CaCu3Ti(4-x)Nb(x)O(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. The ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with Nb doping. Two Debye-type relaxations were observed for the Nb-doped samples at low frequency and high frequency, respectively. The complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. The low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 Hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. The shift voltage V-B corresponding to the minimal capacitance increased with increase of the composition x. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.

Structural and optical characterization of Zn1-xCdxO thin films deposited by dc reactive magnetron sputtering

Zn1-xCdxO crystal thin films with different compositions were prepared on silicon and sapphire substrates by the dc reactive magnetron sputtering technique. X-ray diffraction measurements show that the Zn1-xCdxO films are of completely (002)-preferred orientation for x less than or equal to 0.6. For x = 0.8, the Elm is a mixture of ZnO hexagonal wurtzite crystals and CdO cubic crystals. For pure CdO, it is highly (200) preferential-oriented. Photoluminescence spectrum measurement shows that the Zn1-xCdxO (x = 0.2) thin film has a redshift of 0.14 eV from that of ZnO reported previously.

Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped GaAs/AlAs superlattice

A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage characteristics of a doped GaAs/AlAs superlattice in the transition process from static to dynamic electric-field domain formation caused by increasing the sample temperature. As the temperature increases, these dynamic dc voltage bands expand within each sawtooth-like branch, squeeze out the static regions, and join up together to turn the whole plateau into dynamic electric-field domain formation. These results are well explained by a general analysis of stability of the sequential tunneling current in superlattices. (C) 1999 American Institute of Physics. [S0003-6951(99)04443-5].

A direct-conversion mixer with a DC-offset cancellation for WLAN

This paper presents a 5GHz double-balanced mixer with DC-offset cancellation circuit for direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard. The analog feedback loop is used, to eliminate the DC-offset at the output of the double-balanced mixer. The test results show that the mixer with DC-offset cancellation circuit has voltage conversion gain of 9.5dB at 5.15GHz, noise figure of 13.5dB, IIP3 of 7.6 dBm, 1.73mV DC-offset voltage and 67mW power with 3.3-V power supply. The DC-offset cancellation circuit has less than 0.1mm(2) additional area and 0.3mW added power dissipation. The direct conversion WLAN receiver has been implemented in a 0.35 mu m SiGe BiCMOS technology.

A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics

A new ECTT-DHPT with InGaAsP(lambda=1.55 mu m) as base and InGaAsP(lambda=1.3 mu m) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DRPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52A/W and dark current of 70nA (when V-ce=1V) were obtained.

A novel DC-DC charge pump circuit for passive RFID transponder

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.