Superresolution by three-zone pure phase plate with 0, pi, 0 phase variation

Superresolution is very important in imaging and optical storage systems, and has attracted much attention. In this article, concentric three-zone phase plate with 0, pi, 0 phase variation has been investigated numerically to show that this kind of phase plate can be used to obtain three-dimensional superresolution. In addition, the number of intensity maximum, focal depth, focal shift, full-width half-maximum, and relative intensity of side lobe are listed for different radii of the phase zones, which paves the way for design of the phase plate. Therefore, one can choose values of radii for desired intensity distribution in focal region, such as for the purpose of radial superresolution with high focal depth in optical storage. (c) 2006 Elsevier Ltd. All rights reserved.

Bunga rus bunga roides , A Record New to China ( Xizang AR) with a Note on Trimeresurus tibeta nus( Plate Ⅵ, lower)

1998 年在西藏墨脱县海拔1000 m 左右地方采到成年雌性环蛇1 号, 系我国新纪录。该蛇全长/ 尾长(mm) 1095/ 112 (尾尖断) 。通身背面黑褐色, 后3/ 4 有由背鳞白色点斑缀成的窄横纹约40 个; 腹面浅黑 色, 每隔3 或4 枚腹鳞有不规则的黄白色横斑。尾背有少数不完整的白色纹, 但尾腹面有7 条很明显的横斑。头 部斑纹与M. Smith (1943 : 410) 描述一致, 可能由于蛇龄较老而不清晰。背鳞通身15 行, 脊鳞略扩大; 腹鳞 233 , 尾下鳞35 (略低于文献记载的44～51 , 可能与尾尖断有关) , 除前端第三、四两枚成单外, 其余均成对。 没有颊鳞; 眶前鳞1 , 眶后鳞2 ; 颞鳞1 + 2 ; 上唇鳞7 (22223 式) ; 下唇鳞7 , 第一对在颏鳞后彼此相接, 前4 对 接前颔片; 前颔片大于后颔片, 后者后半介一小鳞。检查一侧, 除前沟牙及其预备牙外, 没有发现其他上颌齿。

Structure optimization of field-plate AlGaN/GaN HEMTs

AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC with varying field-plate length and gate-drain spacing were fabricated and analyzed. The classical small signal FET model and the well-known ColdFET method were used to extract the small signal parameters of the devices. Though the devices with field plates exhibited lower better f(T) characteristic, they did demonstrate better f(max), MSG and power density performances than the conventional devices without field plate. Besides, no independence of DC characteristic on field-plate length was observed. With the increase of the field-plate length and the gate-drain spacing, the characteristic of f(T) and f(max), degraded due to the large parasitic effects. Loadpull method was used to measure the microwave power performance of the devices. Under the condition of continuous wave at 5.4 GHz, an output power density of 4.69 W/mm was obtained for device with field-plate length of 0.5 mu m and gate-drain length of 2 mu m. (c) 2006 Elsevier Ltd. All rights reserved.

A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors

Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nn. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

Aluminium doping induced enhancement of p-d coupling in ZnO

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.

Phase equilibria and plate-fluid interfacial tensions for associating hard sphere fluids confined in slit pores

The excess Helmholtz free energy functional for associating hard sphere fluid is formulated by using a modified fundamental measure theory [Y. X. Yu and J. Z. Wu, J. Chem. Phys. 117, 10156 (2002)]. Within the framework of density functional theory, the thermodynamic properties including phase equilibria for both molecules and monomers, equilibrium plate-fluid interfacial tensions and isotherms of excess adsorption, average molecule density, average monomer density, and plate-fluid interfacial tension for four-site associating hard sphere fluids confined in slit pores are investigated. The phase equilibria inside the hard slit pores and attractive slit pores are determined according to the requirement that temperature, chemical potential, and grand potential in coexistence phases should be equal and the plate-fluid interfacial tensions at equilibrium states are predicted consequently. The influences of association energy, fluid-solid interaction, and pore width on phase equilibria and equilibrium plate-fluid interfacial tensions are discussed.

K-shell ionization cross section of aluminium induced by low-energy highly charged argon ions

Al K-shell X-ray yields are measured with highly charged Arq+ ions (q = 12-16) bombarding against aluminium. The energy range of the Ar ions is from 180 to 380 keV. K-shell ionization cross sections of aluminium are also obtained from the yields data. The experimental data is explained within the framework of 2p pi-2p sigma s rotational coupling. When Ar ions with 2p-shell vacancies are incident on aluminium, the vacancies begin to reduce. Meanwhile, collisions against Al atoms lead to the production of new 2p-shell vacancies of Ar ions. These Ar 2p-shell vacancies will transfer to the 1s orbit of an Al atom via 2p pi-2p sigma s rotational coupling leading to the emission of a K-shell X-ray of aluminiun. A model is constructed based on the base of the above physical scenario. The calculation results of the model are in agreement with the experimental results.

Chiral Salan Aluminium Ethyl Complexes and Their Application in Lactide Polymerization

Synthetic routes to aluminium ethyl complexes supported by chiral tetradentate phenoxyamine (salan-type) ligands [Al(OC6H2(R-6-R-4)CH2)(2){CH3N(C6H10)NCH3}-C2H5] 7: R = H ; 5, 8: R = Cl; 6, 9: R = CH3) are reported. Enantiornerically pure salan ligands 1-3 with (R,R) configurations at their cyclohexane rings afforded the complexes 4, 5, and 6 as mixtures of two diastereoisomers (a and b). Each diastereoisomer a was, as determined by X-ray analysis, monomeric with a five-coordinated aluminium central core in the solid state, adopting a cis-(O,O) and cis-(Me,Me) ligand geometry. From the results of variable-temperature (VT) H-1 NMR in the temperature range of 220-335 K, H-1-H-1 NOESY at 220 K, and diffusion-ordered spectroscopy (DOSY), it is concluded that each diastereoisomer b is also monomeric with a five-coordinated aluminium central core.