Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs

We report on recent experimental results of the spontaneous antiphase dynamics that occurs in a laser-diode-pumped multimode passively Q-switched microchip Yb:YAG (where YAG is yttrium aluminum garnet) lasers with a saturable absorber GaAs. We observe that the pulse sequence of the first mode characterized by one, two, and three pulses as a group and all the modes display an antiphase state as the pumping ratio rises. We modify the multimode rate equations to account for nonlinear absorption due to GaAs in the presence of spatial hole burning. We perform numerical simulations based on the proposed rate equations and reproduce the observed antiphase state of two and three active modes.

Observation of antiphase states in a passively Q-switched multimode microchip Yb : YAG laser with a GaAs saturable absorber

Antiphase dynamics has been observed experimentally for the laser modes operation in a laser-diode-pumped Q-switched microchip Yb:YAG laser with GaAs as a saturable absorber in the presence of spatial hole-burning. The Q-switched pulses sequences of two modes at different pump power have been obtained. The experimental results have shown that the pulses sequences displayed classic antiphase dynamics. (C) 2003 Elsevier B.V. All rights reserved.

Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode.

用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模

制作了一种新型的半导体可饱和吸收镜--表面态型半导体可饱和吸收镜.用表面态型半导体可饱和吸收镜作为被动锁模吸收体实现了半导体端面泵浦Yb∶YAG激光器被动调Q锁模.在泵浦功率仅有1.4 W的情况下,获得了调Q锁模脉冲序列,锁模平均输出功率1 mW,锁模脉冲重复频率200 MHz.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

表面态型半导体可饱和吸收镜实现Yb:YAG激光器被动锁模

制作了一种新型的半导体可饱和吸收镜:表面态型半导体可饱和吸收镜.用表面态型半导体可饱和吸收镜作为被动锁模吸收体,实现了半导体端面泵浦Yb:YAG激光器被动连续锁模.在泵浦功率为10W时,获得了连续锁模脉冲序列,重复频率200MHz,锁模脉冲平均输出功率为70mW.在未加任何色散补偿的情况下,脉冲宽度为4.35ps.

Stable mode-locking in an Yb:YAG laser with a fast SESAM

Stable mode-locking in a diode-pumped Yb:YAG laser was obtained with a very fast semiconductor saturable absorber mirror (SESAM). The pulse width was measured to be 4 ps at the central wavelength of 1047 nm. The average power was 200 mW and the repetition rate was 200 MHz.

Yb：Y2O3透明陶瓷的光学性能研究

介绍了一种基于纳米粉末真空烧结技术的新型固体激光材料——Yb：Y2O3多晶陶瓷的制备工艺、物理化学特性、能级结构和光谱特性，并与Yb：YAG单晶进行了对比．采用紧凑型有源镜激光器（CAMIL）的抽运方式，验证了Yb：Y2O3透明陶瓷的激光输出性能．在35W的最大抽运功率下，得到波长1078nm，功率10．5w的连续激光输出，斜率效率达到37．5％．实验中还观察到激光输出波长随抽运功率增加而红移以及随输出耦合镜变化而漂移的现象．Yb：Y2O3多晶陶瓷是一种理想的激光材料，不仅具有与Yb：YAG单晶同样优秀的

LD 侧面抽运Nd :YAG陶瓷激光器运转条件下归一化热参数优化理论及实验研究

The suppressing effect of laser extraction on the non-radiation transition process is taken into account when the heat model of gain media is developed. Based on the developed heat model, the heat generation in the operating LD side-pumped Nd: YAG ceramic lasers is quantified through using the normalized heating parameter, which can be deduced from the experimental results of the slope efficiency and the absorbed pumping power of the gain media. The main factors which influence on the heat generation are investigated by studying the normalized heating parameter, and the results show that the changes of the laser extraction efficiency, the beam overlap efficiency and the Nd3+ concentration will result in obvious variations of the normalized heating parameter. In this work, the laser extraction efficiency increases to 0.905 by the optimization of the transmission of the output coupling, and the normalized heating parameter decrease to 0.474, correspondingly.

Cr^4＋：YAG被动调QNd：YAG陶瓷激光器的研究

介绍了近几年迅速发展的一种新型激光介质——透明Nd：YAG多晶陶瓷的发展状况，对比分析了多晶陶瓷与单晶的光谱特性、激光特性和连续实验研究情况。并对钛宝石激光器调谐至808nm，端面抽运Nd：YAG陶瓷被动调Q全固态激光器的脉冲运转进行了较为详细的理论分析和实验研究。采用初始透射率为90％的Cr^4＋：YAG可饱和吸收晶体，被动调Q的阈值功率为119mW，当端面抽运功率为465mW时，获得波长为1064nm，脉宽为16ns，重复频率为18．18kHz，单脉冲能量为3．4μJ，平均输出功率为61mW的稳定调Q

Yb：Y2O3陶瓷薄片激光器获得10．5W连续激光输出

室温下采用中心波长约970nm准直输出的大功率激光二极管模块作为抽运源，端面抽运双程吸收的腔型结构，抽运原子数分数为8％的Yb：Y2O3多晶透明陶瓷片获得连续激光输出。抽运阈值功率为7W，当抽运功率达到35W时，获得优化连续激光输出功率为10．5W，光光转换效率为30％，斜率效率为37．5％。激光输出功率随抽运功率基本呈线性增长。采用更高功率抽运源、优化谐振腔结构和减小热效应的影响，Yb：Y2O3陶瓷激光器的输出功率和效率将会得到进一步提高。

钛宝石激光器端面抽运Nd：YAG陶瓷激光器热沉积理论和实验研究

通过热沉积系数研究在激光提取条件下掺杂原子分数为1.0%的Nd：YAG陶瓷激光器中热沉积问题.热沉积系数定义为热沉积功率与激光器输出功率之比.在理论分析基础上,通过测量激光器斜率效率来间接测定热沉积系数,实验测定的热沉积系数值为0.63.建立激光提取条件下Nd：YAG陶瓷发热模型,讨论了影响热沉积系数的主要因素.结果表明：热沉积系数对Nd：YAG陶瓷的辐射量子效率、交叠效率以及激光提取效率的变化非常敏感.为有效减少介质内热沉积,在激光器优化设计中交叠效率和激光提取效率是需要着重考虑的参数.所得结果可为进一

侧面抽运国产Nd∶YAG陶瓷棒的激光特性

实验研究了激光二极管阵列(LDA)侧向抽运国产Nd∶YAG陶瓷棒的准连续及被动调Q激光输出特性。该陶瓷激光器采用LDA侧面紧密环绕均匀排布的抽运结构,陶瓷棒抽运区域长度为20 mm,其总尺寸为3 mm×35 mm,掺杂原子数分数为~1%。在千赫兹准连续运转条件下,当平-平谐振腔的输出耦合镜透过率为47.3%时,获得最大平均功率23 W的1064 nm激光输出,光束发散角为4.5 mrad,斜率效率达12%。在谐振腔内插入Cr4+∶YAG晶体作为被动调Q开关,成功地实现了陶瓷激光器千赫兹重复频率调Q激光脉冲输出,当Cr4+∶YAG晶体初始透过率为60%时,输出激光脉冲宽度(半峰全宽)可窄至14.5 ns,调Q动静比约为40%。

Dual-wavelength competitive output in Nd:Y3Sc1.5Al3.5O12 ceramic disk laser

In this paper, we demonstrated a dual-wavelength competitive output in Nd:Y3SC1.5Al3.5O12 ceramic disk laser. Different dual-wavelength output behaviors for Nd:YSAG and Nd:YAG ceramic disk laser were investigated and discussed. By applying the energy transfer model, we suggested the reasonable explanation for this new phenomenon as the disordered replacing of Al3+ ions by Sc3+ ions. The main advantage of the dual-wavelength ceramic laser is the possibility to serve as the seed source to generate Terahertz radiation. (C) 2008 Elsevier B.V. All rights reserved.