Coherent spectroscopy of the Rb-87 Fg=1 -> F-e=0 closed transition

This paper has observed linewidth narrowing of dark states in rubidium cell by using the Hanle configuration. The reduction of the coherent resonance width under the transition of Rb-87 F-g = 1 -> F-e = 0 is observed and the qualitative explanation about its mechanism is presented. Multiple subnatural width dips are obtained with a linearly polarized laser beam for the transition of Rb-87 F-g = 0, 1, 2. The feature of negative and positive slope, namely dispersionlike feature, is observed in the transmitted light.

0.4-1.2A GeV能区重离子碰撞中的直接流系统性研究

直接流是研究重离子碰撞动力学演变和压缩形成的高密核物质性质很好的探针，本论文系统地研究了0.4、0.8和1.16A GeV的Ni+Ni和Pb+Pb碰撞中的直接流。实验是在德国重离子研究中心(GSI)的FOPI探测装置上完成的。论文中，简单总结了中高能区重离子碰撞的现状和描述集体流的主要理论模型，介绍了FOPI探测系统，给出了详细的实验数据分析过程，对所得到的物理结果进行了讨论。本论文工作的重点如下：基于FOPI系统的实验数据，发展了一套质量相关(Z=1离子)的直接流的提取方法。提取了各碰撞系统出射P、D和T粒子在不同碰撞中心度下的微分直接流和积分直接流。研究了P、D和T的直接流对碰撞中心度、系统尺寸和碰撞能量的依赖性，以及对核物质状态方程的敏感性。结果表明：直接流敏感地依赖于碰撞中心度，近中心碰撞具有更强直接流信号；对于轻重两种系统，用常用的AP1/3+AT1/3系数对积分直接流进行了标度，观察到一定的标度性，但不能完全标度；通过研究直接流对碰撞能量的依赖性发现，在0.4－1.2A GeV能区内，随能量升高，直接流在已经达到了饱和，并开始下降，并且P、D和T的变化趋势相同。实验数据与输运模型IQMD计算比较发现，直接流的变化趋势和最大密度变化趋势相同，说明直接流是核物质压缩程度的一个良好探针。计算得到的P、D和T微分和积分的V1值表明，与质量相关的直接流，无论是微分值还是积分值都敏感依赖于模型中EoS参数。比较发现，不同碰撞能量下，重的Pb+Pb系统的数据和软的EoS符合很好，说明核物质不可压缩系数在210 MeV附近，这与文献中的结果相吻合，说明与质量相关的直接流是EoS的敏感探针。对于轻Ni＋Ni系统，目前的IQMD还不能重现数据，但其趋向于硬的EoS，需要发展描述碰撞过程更为精细的理论模型。数据整体趋势表明，随者系统变重，中子比例的增加，EoS变软，难以给出同一组IQMD参数来同时解释全部的实验数据。对于所研究的碰撞系统，比较中心快度区斜率行为时发现，P、D和T的直接流与出射粒子质量数呈线性关系，并且出射粒子的积分直接流可以很好的用常数(A+1)/2进行标度。如果出射粒子的直接流用IQMD计算的核阻止进行归一，归一后的直接流与碰撞能量成正比。这证明核阻止与直接流有线性关联，反映了核阻止对于碰撞中核物质达到的最高密度起决定性的作用。论文工作的另一部分是完成了FOPI探测装置中飞行时间探测器的升级工作。研制了新型的玻璃MMRPC，完成了性能的批量测试，并研究了该探测器的高计数率行为。测量结果显示，在实验计数率(0.1 kHz/cm2)条件下，MMRPC时间分辨达到75 ps，探测效率达到98％。当计数率达到3－5 kHz/cm2时，时间分辨和探测效率降至约110 ps和75％。高计数率探测效率变差的幅度可以用DC模型进行解释，然而时间分辨的变化幅度用DC模型难以解释

(Ce_(0.8)RE_(0.2))_(1-x)M_xO_(2-δ)固体电解质的溶胶-凝胶合成及其电性质

利用溶胶 凝胶法合成了 (Ce0 .8RE0 .2 ) 1-xMxO2 -δ(RE :稀土 ,M :碱土 )系列固体电解质 ,XRD表明 80 0℃即形成萤石结构 ,较高温固相反应合成温度低约 70 0℃ .测定了样品的电导率和阻抗谱 .XPS测试表明 ,掺杂碱土氧化物后吸附氧浓度明显增大 ,氧空位增多 ,电导率和氧离子迁移数增大 ,改善了CeO2 基固体电解质的性能 .讨论了碱土及稀土离子对电性质的影响 .(Ce0 .8Sm0 .2 ) 1-0 .0 5 Ca0 .0 5 O2 -δ80 0℃时电导率0 1 2 6S·cm-1,氧离子迁移数 0 .99.

Ba_2Pr_xLn_(1-x)Cu_3O_(7-δ)(Ln=Y,Nb,Yb,0≤X≤1)体系中Cu-O链及Cu-O层对超导作用的探讨

本文合成了 Ba_2P_(rx)Ln_(1-x)Cu_3O_(7-δ)系列化合物,测量了它们的超导电性(Tc),当 x=0.1,T_c(L_n=Y)=78.5K,T_c(Yd)=88K、T_c(Nd)<77K。晶胞参数及正交畸变与组成的变化图表明稀土元素的离子半径影响显著,讨论了 Ba_2LnCu_3O(7-δ)体系中 Cu-O 链、Cu-O 层及 Cu~(3+)对超导电性的作用,当 Ln 的价态界于三、四价之间时(如Pr),四价的成份越多,Cu~(3+)的量就越少,虽然正交畸变很大,但 T_c 降低。

950℃、1.0～3.5GPa下斜长角闪岩脱水熔融——压力和时间对结构的影响

利用YJ-3000t和JL-3600t多顶砧压力机,以哀牢山造山带南部红河县大白能—乐育剖面上的天然块状斜长角闪岩为初始样品,在950℃、1.0～3.5GPa、恒温20～300h条件下进行了两个系列的斜长角闪岩块状样品脱水部分熔融实验:(1)保持温度T=950℃,加热时间t=100h不变,改变压力(1.0～3.5GPa)的实验;(2)保持温度T=950℃,压力p=3.0GPa不变,改变加热时间(20～300h)的实验。结果表明,1.0～3.5GPa、950℃、恒温100h的条件下,随压力升高,斜长角闪岩中依次生成了单斜辉石+石榴石+熔体的矿物组合(1.0～1.5GPa)和单斜辉石+石榴石+熔体+硬玉+SiO2矿物+蓝晶石(2.0～3.5GPa)的矿物组合。3.0GPa、950℃条件下,随加热时间增加,实验产物中依次生成了单斜辉石+石榴石+熔体+硬玉+SiO2矿物+蓝晶石的矿物组合(20～100h)和单斜辉石+石榴石+熔体的矿物组合(150～300h)。斜长角闪岩的原岩结构决定了实验产物中新生矿物和熔体的分布。依据实验产物的矿物组合和新生矿物的分布特征,讨论了950℃、1.0～3.5GPa、恒温(20～300h)条件下,斜长角闪岩部分熔融过程的结构变化、变质反应以及石榴石冠状体的成因。

锰含量对LiNi_(0.85-x)Co_(0.15)Mn_xO_2结构及形貌的影响

采用共沉淀法先合成出氢氧化物前驱体Ni0.85-xCo0.15Mnx(OH)2,其中X=0、0.1、0.2和0.4,前驱体与Li2CO3在空气气氛中固相烧结制得正极材料LiNi0.85-xCo0.15MnxO2。用XRD、SEM研究了锰含量对材料结构和形貌的影响。研究发现,LiNi0.85Co0.15O2的X射线衍射图中存在微量第二相,而锰掺杂有利于减小反应过程中锂离子损失和镍离子占据锂位,容易形成有序层状结构材料。随着Mn离子替代Ni离子量的增加,晶胞参数a减小,晶胞参数c、c/a及I003/I104值增大。SEM结果表明前驱体和最终产物形貌均随锰含量增加颗粒均匀性增强,粒子尺寸变小,粒径分布变窄。

Comparison of laser performances of 5at.% Yb : Gd2xY2(1-x)SiO5 crystals between different cutting directions

We investigate the laser actions of 5at.% Yb:Gd2xY2(1-x)SiO5 (Yb:GYSO; x = 0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9 W. In contrast, the sample cut parallel reaches only 1.65 W at 1044 nm with a slope elLiciency of 33.76% with absorbed pump power of 7.99 W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68 nm to 1084.82 nm.

1kHz-0．1TW高效率钛宝石激光放大器

介绍了一种高重复频率掺钛蓝宝石飞秒激光多通高效率放大系统．在抽运功率为23W，入射功率为660mW时，获得7．2W的放大输出，放大效率达30％．经压缩器压缩后，获得单脉冲能量4．5mJ，脉冲宽度为38fs，重复频率为1kHz，峰值功率大于0．1TW的超短超强激光脉冲．

Two-step digit-set-restricted modified signed-digit addition-subtraction algorithm and its optoelectronic implementation

A novel, to our knowledge, two-step digit-set-restricted modified signed-digit (MSD) addition-subtraction algorithm is proposed. With the introduction of the reference digits, the operand words are mapped into an intermediate carry word with all digits restricted to the set {(1) over bar, 0} and an intermediate sum word with all digits restricted to the set {0, 1}, which can be summed to form the final result without carry generation. The operation can be performed in parallel by use of binary logic. An optical system that utilizes an electron-trapping device is suggested for accomplishing the required binary logic operations. By programming of the illumination of data arrays, any complex logic operations of multiple variables can be realized without additional temporal latency of the intermediate results. This technique has a high space-bandwidth product and signal-to-noise ratio. The main structure can be stacked to construct a compact optoelectronic MSD adder-subtracter. (C) 1999 Optical Society of America.

基于基频分量消光的1/4波片快轴标定方法

提出了一种基于基频分量消光的波片快轴标定方法,并利用琼斯矩阵对其标定原理进行了分析。激光器、起偏器、相位调制器、待标定1/4波片、检偏器和光电探测器构成标定光路,起偏器、检偏器的透光轴与相位调制器的振动轴分别成+45°和0°夹角。准直激光束依次经过起偏器、相位调制器、待标定1/4波片和检偏器,由光电探测器接收。理论分析表明该标定方法标定精度主要取决于检偏器的定位误差。实验验证了该标定方法的有效性,1/4波片快轴标定结果的最大偏差为0.043°,标准差为0.012°,标定精度为0.05°。

3.0～2.0Ma B. P.南海南部深海沉积物孢粉记录及其对全球变化的响应

为了重建东亚季风区域2.5MaB.P.前后植被和气候变化的历史，更好地了解低纬度地区植被变化及其对全球变化的响应，本研究选择了南海南部ODP1143站深海沉积物中的孢粉样品进行研究。通过高分辨率（7ka）的孢粉样品的分析研究，建立起3.0～2.0MaB.P.时段南海深海沉积孢粉组合序列，系统建立了这一时段植被演替序列。在此基础上，重点研究了2.5MaB.P.前后气候变化在南海周边地区植被演替中的响应，为探索和揭示东亚古季风及古环境演变提供了孢粉学依据。 ODP 1143站位于南沙海区，北纬9º22´，东经113º17´，深海柱状样采于水深2772m的大陆坡。本研究以生物地层学和氧同位素年代学为依据建立了年龄框架，对1143站135～95m（3.0～2.6 Ma B. P.）深海沉积中的孢粉样品进行了分析，建立了3.0～2.0MaB.P.时段南海深海沉积孢粉组合序列。孢粉样品处理方法主要是用盐酸去掉钙质和氢氟酸浸泡溶解硅质后，再用筛子将样品在超声波发生器中震荡过滤。孢粉的鉴定和统计在光学透视显微镜下完成。研究结果表明： 1、孢粉谱的主要特征是沉积率变化显著。与3.0～2.6 Ma B. P. 相比，2.6～2.0 Ma B. P.各类型花粉及孢子沉积率均有显著提高。该结果表明2.6 Ma B. P.南海海平面有显著下降，可与北半球冰盖形成、东亚季风增强相对应。 2、2.6 Ma B. P.以来，各类型孢粉沉积率变化与深海氧同位素分期相对应，代表了多次冰期-间冰期旋回。该结果表明南海海平面曾有多次上升和下降。 3、频谱分析结果表明，3.0～2.0 Ma B. P.存在0.1 Ma（偏心率）和46.9ka（斜率）的周期。

Growth performance of juvenile white sturgeon as affected by feeding regimen

Juvenile (mean +/- SE, 8.6 +/- 0.1 g) white sturgeon Acipenser transmontanus were fed for 8 weeks under one of six feeding regimens: continuously 24 h/d (C24); continuously 12.8 h/d during the day (C12/D), continuously 12.8 h/d at night (C12/N), 6 meals/d (M6), 4 meals/d (M4), and 2 meals/d (M2). Specific growth rate, feed efficiency, and body lipid content were significantly (P < 0.05) affected by the feeding regimen. These variables were highest in the C24 group and lowest in the M2 group; fish in the M6 group showed the second best performance. Specific growth rate and feed efficiency in terms of wet weight in the M6 groups were not significantly different from those in the C24 groups, but specific growth rate in terms of energy and energy retention efficiency were significantly lower. Feeding regimen had no effect on condition factor, hepatosomatic index, coefficient of variation in final body weight, and protein and ash contents. There was no significant difference in these indexes between 12.8-h/d continuous feeding by day or by night. It was concluded that continuous feeding for 24 h/d was the optimum feeding regimen for juvenile white sturgeon.

Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films

(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.

Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)

We have grown MnxGe1-x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 X 10(19) cm(-3) while the MnxGe1-x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.