Docking and molecular dynamics study on the inhibitory activity of coumarins on aldose reductase

In order to explore the inhibitory mechanism of coumarins toward aldose reductase (ALR2), AutoDock and Gromacs software were used for docking and molecular dynamics studies on 14 coumarins (CM) and ALR2 protease. The docking results indicate that residues TYR48, HIS110, and TRP111 construct the active pocket of ALR2 and, besides van der Waals and hydrophobic interaction, CM mainly interact with ALR2 by forming hydrogen bonds to cause inhibitory behavior. Except for CM1, all the other coumarins take the lactone part as acceptor to build up the hydrogen bond network with active-pocket residues. Unlike CM3, which has two comparable binding modes with ALR2, most coumarins only have one dominant orientation in their binding sites. The molecular dynamics calculation, based on the docking results, implies that the orientations of CM in the active pocket show different stabilities. Orientation of CM1 and CM3a take an unstable binding mode with ALR2; their conformations and RMSDs relative to ALR2 change a lot with the dynamic process. While the remaining CM are always hydrogen-bonded with residues TYR48 and HIS110 through the carbonyl O atom of the lactone group during the whole process, they retain the original binding mode and gradually reach dynamic equilibrium.

基于AFM的机器人化纳米操作中纳观力的初步研究

针对基于原子力显微镜(AFM)的机器人化纳米操作,对探针作用下探针—基片—微粒之间纳观力的作用规律进行了初步分析.指出起主要作用的纳观力为范德华力、接触斥力、纳米摩擦力、毛细作用力以及纳米静电力等五种,并初步推导了各种纳观力的表达形式.通过力—距离曲线仿真与实验验证了所进行分析的合理性;该分析有助于进行纳米操作的精确控制.

High Aspect Ratio (L/D) Riser Viv Prediction Using Wake Oscillator Model

A two-dimensional (2-D) vortex-induced vibration (VIV) prediction model for high aspect ratio (LID) riser subjected to uniform and sheared flow is studied in this paper. The nonlinear structure equations are considered. The near wake dynamics describing the fluctuating nature of vortex shedding is modeled using classical van der Pol equation. A new approach was applied to calibrate the empirical parameters in the wake oscillator model. Compared the predicted results with the experimental data and computational fluid dynamic (CFD) results. Good agreements are observed. It can be concluded that the present model can be used as simple computational tool in predicting some aspects of VIV of long flexible structures. (C) 2008 Elsevier Ltd. All rights reserved.

一类非线性振动系统的渐近解

本文提出分析一类强非线性振子的一种渐近方法,导出了用振幅和相位表示的二阶近似解,给出了振幅和相位所满足的方程,借此可以确定极限环的振幅和性态。作为实例,还研究了修正的van der Pol振子,给出了相应的极限环的二阶近似解析解,与数值解的比较表明,两者非常相符。

Asymptotic solutions to a class of nonlinear oscillation systems

In this paper, we present an asymptotic method for the analysis of a class of strongly nonlinear oscillators, derive second-order approximate solutions to them expressed in terms of their amplitudes and phases, and obtain the equations governing the amplitudes and phases, by which the amplitudes of the corresponding limit cycles and their behaviour can be determined. As an example, we investigate the modified van der Pol oscillator and give the second-order approximate analytical solution of its limit cycle. The comparison with the numerical solutions shows that the two results agree well with each other.

Interaction of corticosterone and nicotine in regulation of prepulse inhibition in mice

The aim of the present Study was to investigate if different levels of circulating corticosterone (CORT) modulate the effect of nicotine on prepulse inhibition (PPI), a measure of sensorimotor gating that is disrupted in schizophrenia and other mental illnesses. Four groups of mice were investigated: sham-operated, adrenalectomized (ADX) and implanted with a cholesterol pellet, ADX and implanted with a 10 mg CORT pellet, or ADX and 50 mg, of CORT. Different CORT levels or doses of nicotine did not significantly affect startle responses. Baseline PPI was significantly reduced in mice implanted with the highest dose of CORT. In ADX mice implanted with cholesterol, nicotine treatment influenced PPI depending on the prepulse intensity. In ADX mice implanted with 50 mg of CORT, treatment with 10 mg/kg of nicotine caused a significant increase in PPI at all prepulse intensities. Binding studies showed that corticosterone treatment had significantly affected nicotinic acetylcholine receptor (nAChR) density in the mouse brain. Treatment with 50 mg CORT decreased I-125-epibatidine binding in the globus pallidus and I-125-alpha-bungarotoxin binding in the claustrum. These results suggest a possible interaction of corticosterone and nicotine at the level of the alpha4- and alpha7-type nAChR in the regulation of PPI. In situations of high circulating levels of corticosterone, nicotine may be beneficial to restore disruption of PPI. (C) 2004 Elsevier Ltd. All rights reserved.

抗新霉素基因对草鱼肾细胞的磷酸钙共沉淀转移

<正> 自1973年 Graham 和 Van der Eb 首次成功地应用 DNA-磷酸钙共沉淀法转化哺乳动物培养细胞以来,又提出了电脉冲法;显微注射法;磷脂载体法及细菌原生质体融合法等多种培养细胞基因转移方法。然而,目前的研究多局限于哺乳动物细胞,鱼类培养细胞方面的报道却很少。建立鱼类培养细胞基因转移的方

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions

Illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. Partial oxidation, undersaturated solution and high temperature change Frank-Van der Merwe (FM) growth of Al0.3Ga0.7As in liquid phase epitaxy (LPE) into isolated island deposition. Low growth speed, high temperature and in situ annealing in molecular beam epitaxy (MBE) cause the origination of InAs/GaAs quantum dots (QDs) to happen while the film is still below critical thickness in Stranski-Krastanow (SK) mode. Sample morphologies are characterized by scanning electron microscopy (SEM) or atomic force microscopy (AFM). It is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 Elsevier B.V. All rights reserved.

Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy

A series of 1-mu m-thick undoped In0.53Ga0.47As with different substrate growth temperature (T-g) or different beam flux pressure (BFP) of As were grown on lattice-matched semi-insulating InP (001) substrates by molecular beam epitaxy (MBE). Van der Pauw Hall measurements were carried out for these In0.53Ga0.47As samples. The residual electron concentration decreased with increasing temperature from 77 to 140 K, but increased with increasing temperature from 140 to 300 K. Rapid thermal annealing (RTA) can reduce the residual electron concentration. The residual electron mobility increased with increasing temperature from 77 to 300 K. All these electrical properties are associated with As antisite defects. (c) 2006 Elsevier B.V. All rights reserved.

Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

In this study, we first present the process of the melt epitaxial (ME) growth method, and the improvement of low-temperature electron mobility of the long-wavelength InAsSb epilayers grown by ME in a fused silica boat. The electrical properties were investigated by van der Pauw measurement at 300 and 77 K. It is seen that the electron mobility of the InAsSb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/V s when the temperature was reduced from 300 to 77 K, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 K to 54,400 cm(2)/V s at 77 K. The electron mobility of 54,400cm(2)/Vs is the best result, so far, for the InAsSb materials with cutoff wavelength of 8-12 mum at 77 K. This may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (C) 2002 Elsevier Science B.V. All rights reserved.

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

In AlGaAs/InGaAs/GaAs PM-HEMT structures, the characterization of deep centers, the degradation in electrical and optical properties and their effects on electrical performance of the PM-HEMTs have been investigated by DLTS, SIMS, PL and conventional van der Pauw techniques. The experimental results confirm that the deep level centers correlate strongly with the oxygen content in the AlGaAs layer, the PL response of PM-HEMTs, and the electrical performance of the PM-HEMTs. Hydrogen plasma treatment was used to passivate/annihilate these centers, and the effects of hydrogenation were examined.