光纤Bragg光栅液氦环境下温度传感特性的研究

进行了液氦温度（4．2K）到室温（298K）温区内光纤Bragg光栅（FHG）温度传感性能的实验研究。重点分析了液氦温度（4．2K）到液氮温度（77K）FBG的温度传感特性。实验表明：FHG传感特性与温度相关。在50K以下，温度响应基本没有变化；50K-77K，波长偏移量随温度上升变化不规律；150K-298K传感特性近似成线性。对比裸光栅与涂敷光栅，涂敷光栅的温度灵敏度远大于裸光栅的温度灵敏度。选用外加热膨胀系数大的聚合物封装，可以显著提高FHG的温敏系数和线性度。

Electron quantum path tuning and isolated attosecond pulse emission driven by a waveform-controlled multi-cycle laser field

We investigate high-order harmonic emission and isolated attosecond pulse (IAP) generation in atoms driven by a two-colour multi-cycle laser field consisting of an 800 nm pulse and an infrared laser pulse at an arbitrary wavelength. With moderate laser intensity, an IAP of similar to 220 as can be generated in helium atoms by using two-colour laser pulses of 35 fs/800 nm and 46 fs/1150 nm. The discussion based on the three-step semiclassical model, and time-frequency analysis shows a clear picture of the high-order harmonic generation in the waveform-controlled laser field which is of benefit to the generation of XUV IAP and attosecond electron pulses. When the propagation effect is included, the duration of the IAP can be shorter than 200 as, when the driving laser pulses are focused 1 mm before the gas medium with a length between 1.5 mm and 2 mm.

Generation of an extreme ultraviolet supercontinuum in a two-color laser field

We theoretically investigate the high-order harmonic generation in a helium atom with a two-color optical field synthesized by an intense 6 fs pulse at 800 nm and a relatively weak 21.3 fs pulse at 400 nm. When the frequency-doubled pulse is properly time shifted with respect to the fundamental pulse, an ultrabroad extreme ultraviolet supercontinuum spectrum with a 148 eV spectral width can be generated which directly creates an isolated 65 as pulse even without phase compensation. We explain this extraordinary phenomenon by analyzing maximum electron kinetic energies at different return times.

Energy spectrum of two-component Bose-Einstein condensates in optical lattices

With the method of Green's function, we investigate the energy spectra of two-component ultracold bosonic atoms in optical lattices. We End that there are two energy bands for each component. The critical condition of the superfluid-Mott insulator phase transition is determined by the energy band structure. We also find that the nearest neighboring and on-site interactions fail to change the structure of energy bands, but shift the energy bands only. According to the conditions of the phase transitions, three stable superfluid and Mott insulating phases can be found by adjusting the experiment parameters. We also discuss the possibility of observing these new phases and their transitions in further experiments.

Ultra-slow atomic beam generation by velocity selective resonance

We describe a method to generate an ultra-slow atomic beam by velocity selective resonance (VSR). A VSR experiment on a metastable helium beam in a magnetic field is presented and the results show that the transverse velocity of the defected beam can be cooled and precisely controlled to less than the recoil velocity, depending on the magnitude of the magnetic field. We extend this idea to a cold atomic cloud to produce an ultra-slow Rb-87 beam that can be used as a source of an atomic fountain clock or a space clock.

微晶玻璃在大功率脉冲氙灯封接中的应用

：为提高大功率脉冲氙灯的封接强度，将微晶玻璃作为封接材料引入到氙灯封接应用中. 以 Bi2O3,ZnO,Al2O3,MgO,CaCO3,SiO2,BaO,H3BO3,P2O5,Na2O 为原料，通过高温熔融制备了大功率脉冲氙灯封接 用微晶玻璃样品. 测试了样品的热膨胀系数,并通过差热分析(Differential Thermal Analysis，DTA)对脉冲氙灯 微晶玻璃的封接温度进行了讨论，用X 射线衍射(X-ray diffraction ，XRD)表征了封接玻璃，并进行了分析. 将 制得的样品磨成玻璃粉末，制成膏剂状玻璃焊料，对大功率脉冲氙灯进行封接，得到大功率脉冲氙灯的微晶 玻璃封接件. 通过氦质谱检漏仪检测，1#、2#、4#封接件气密性良好，达到10-6 Pa.

Photoluminescence degradation in GaN induced by light enhanced surface oxidation

The exponential degradation of the photoluminescence (PL) intensity at the near-band-gap was observed in heavily doped or low-quality GaN with pristine surface under continuous helium-cadmium laser excitation. In doped GaN samples, the degradation speed increased with doping concentration. The oxidation of the surface with laser irradiation was confirmed by x-ray photoemission spectroscopy measurements. The oxidation process introduced many oxygen impurities and made an increase of the surface energy band bending implied by the shift of Ga 3d binding energy. The reason for PL degradation may lie in that these defect states act as nonradiative centers and/or the increase of the surface barrier height reduces the probability of radiative recombination.

High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere

High-frequency vibrational modes have been observed at liquid-helium temperature in silicon samples grown in a H-2 or D-2 atmosphere. The highest-frequency ones are due to the overtones and combination modes of SiH fundamentals. Others are CH modes due to (C,H) complexes, but the simultaneous presence of NH modes due to (N,H) complexes cannot be excluded. The present results seem to show also the existence of centers including both SiH and CH or NH bonds. One sharp mode at 4349 cm-l is related to a weak SiH fundamental at 2210 cm(-1). The related center is ascribed to a vacancy fully decorated with hydrogen with a nearest-neighbor C atom. [S0163-1829(99)00911-X].

MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON

A simple method for the analysis of concentration ratios N/Si and O/Si in silicon nitride and oxide layers on silicon substrate is presented. 1.95-MeV proton elastic backscattering was used to determine the composition and density. A comparison with 2.1-MeV helium Rutherford backscattering measurements is given. Results are in good agreement with each other. The method is especially useful to analyze samples of 20 000 angstrom or thicker layers. We conclude that these two techniques are complementary for the measurements of samples with different thickness. A brief discussion has been given on results.