PREPARATION AND ELECTRICAL-PROPERTIES OF BISMUTH STRONTIUM DIMANGANESE HEXOXIDE [BISRMN2O6]

BiSrMn2O6 is prepared by solid state reaction at 850 degrees C. It is tetragonal with a= 0.7821nm c= 0.3790 nm. It is a black n-type semiconductor below 820K. Its resistivity is 3 Omega-CM at room temperature. A semiconductor -metal transition is observed around 820K, Bi1+xSr1-xMn2O6-y is a solid solution for -0.2 less than or equal to x less than or equal to 0.2. Its unit cell dimensions increase but resistivity decreases when the Bi contents increase.

Uniform Lanthanide Orthoborates LnBO(3) (Ln = Gd, Nd, Sm, Eu, Tb, and Dy) Microplates: General Synthesis and Luminescence Properties

A variety of uniform lanthanide orthoborates LnBO(3) (Ln = Gd, Nd, Sm, Eu, Tb, and Dy) microplates have been successfully prepared by a general and facile conversion method. One-dimensional (ID) lanthanide hydroxides were first prepared through a simple hydrothermal process. Subsequently, uniform LnBO(3) microplates were synthesized at the expense of the ID precursors during a hydrothermal conversion process. The whole process in this method was carried out in aqueous condition without the use of any organic solvents, surfactant, or catalyst. The as-obtained rare earth ions doped GdBO3 and TbBO3 microplates show strong light emissions with different colors coming from different activator ions under ultraviolet excitation or low-voltage electron beam excitation, which might find potential applications in fields such as light phosphor powders and advanced flat panel display devices.