PREPARATION AND ELECTRICAL-PROPERTIES OF BISMUTH STRONTIUM DIMANGANESE HEXOXIDE [BISRMN2O6]

BiSrMn2O6 is prepared by solid state reaction at 850 degrees C. It is tetragonal with a= 0.7821nm c= 0.3790 nm. It is a black n-type semiconductor below 820K. Its resistivity is 3 Omega-CM at room temperature. A semiconductor -metal transition is observed around 820K, Bi1+xSr1-xMn2O6-y is a solid solution for -0.2 less than or equal to x less than or equal to 0.2. Its unit cell dimensions increase but resistivity decreases when the Bi contents increase.