Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

In this paper, we use a pulsed rapid thermal processing (RTP) approach to create an emitter layer of hetero-junction solar cell. The process parameters and crystallization behaviour are studied. The structural, optical and electric properties of the crystallized films are also investigated. Both the depth of PN junction and the conductivity of the emitter layer increase with the number of RTP pulses increasing. Simulation results show that efficiencies of such solar cells can exceed 15% with a lower interface recombination rate, but the highest efficiency is 11.65% in our experiments.

Numerical simulation of nc-Si : H/c-Si heterojunction solar cells

AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si:H/c-Si solar cells. It is shown that interface states are essential factors prominently influencing open circuit voltages (V-OC) and fill factors (FF) of these structured solar cells. Short circuit current density (J(SC)) or spectral response seems more sensitive to the thickness of intrinsic a-Si:H buffer layers inserted into n(+)-nc-Si:H layer and p-c-Si substrates. Impacts of bandgap offset on solar cell performances have also been analyzed. As DeltaE(C) increases, degradation of VOC and FF owing to interface states are dramatically recovered. This implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. Theoretical maximum efficiency of up to 31.17% (AM1.5,100mW/cm(2), 0.40-1.1mum) has been obtained with BSF structure, idealized light-trapping effect(R-F=0, R-B=1) and no interface states.

Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The player consists of nanometer-sized Si crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V-infinity=1.045 V and FF=70.3 %, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells arc discussed on the bases of the density-functional approach and the AMPS model.

Quantifying the effectiveness of SiO2/Au light trapping nanoshells for thin film poly-Si solar cells

In order to enhance light absorption of thin film poly-crystalline silicon (TF poly-Si) solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory, the effective photon trapping flux (EPTF) and effective photon trapping efficiency (EPTE) were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures. The EPTF, EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer. With an optimum size and density of SiO2/Au nanoshell light trapping layer, the EPTE could reach up to 40% due to the enhancement of light trapping over a broad spectral range, especially from 500 to 800 nm.

EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS

In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cells. It is observed that in the dose range of 1.4-8.4 x 10(15) cm(-2) the defect creation has not reached its saturation level and the metastable defects caused by the irradiation cannot be completely removed by a two hour annealing at 200 degrees C for i a-Si:H films or at 130 degrees C for a-Si:H solar cells. The results may be understood in terms of a model based on two kinds of metastable defects created by 1 MeV-electron irradiation.

Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).

Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The player consists of nanometer-sized Si crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V-infinity=1.045 V and FF=70.3 %, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells arc discussed on the bases of the density-functional approach and the AMPS model.

Energy transfer between silicon-oxygen-related defects and Yb3+ in transparent glass ceramics containing Ba2TiSi2O 8 nanocrystals

We report on the conversion of near-ultraviolet radiation of 250-350 nm into near-infrared emission of 970-1100 nm in Yb3+-doped transparent glass ceramics containing Ba2TiSi2O8 nanocrystals due to the energy transfer from the silicon-oxygen-related defects to Yb3+ ions. Efficient Yb3+ emission (F-2(5/2)-> F-2(7/2)) was detected under the excitation of defects absorption at 314 nm. The occurrence of energy transfer is proven by both steady state and time-resolved emission spectra, respectively, at 15 K. The Yb2O3 concentration dependent energy transfer efficiency has also been evaluated, and the maximum value is 65% for 8 mol % Yb2O3 doped glass ceramic. These materials are promising for the enhancement of photovoltaic conversion efficiency of silicon solar cells via spectra modification.

Theoretical design and performance of InxGa1-xN two-junction solar cells

The efficiencies of InxGa1-xN two-junction solar cells are calculated with various bandgap combinations of subcells under AM1.5 global, AM1.5 direct and AM0 spectra. The influence of top-cell thickness on efficiency has been studied and the performance of InxGa1-xN cells for the maximum light concentration of various spectra has been evaluated. Under one-sun irradiance, the optimum efficiency is 35.1% for the AM1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 eV/1.15 eV. And the limiting efficiency is 40.9% for the highest light concentration of the AM1.5 global spectrum, with the top/bottom cell bandgap as 1.72 eV/1.12 eV.

Hybrid bulk heterojunction solar cells from a blend of poly(3-hexylthiophene) and TiO2 nanotubes

Hybrid bulk heterojunction solar cells based on blend of poly(3-hexylthiophene) (P3HT) and TiO2 nanotubes or dye(N719) modified TiO2 nanotubes were processed from solution and characterized to research the nature of organic/inorganic hybrid materials. Compared with the pristine polymer P3HT and TiO2 nanoparticles/P3HT solar cells, the TiO2 nanotubes/P3HT hybrid solar cells show obvious performance improvement, due to the formation of the bulk heterojunction and charge transport improvement. A further improvement in the device performance can be achieved by modifying TiO2 nanotube surface with a standard dye N719 which can play a role in the improvement of both the light absorption and charge dissociation. Compared with the non-modified TiO2 nanotubes solar cells, the modified ones have better power conversion efficiency under 100 mW/cm(2) illumination with 500W Xenon lamp. (C) 2008 Elsevier B. V. All rights reserved.

Synthesis of MDMO-PPV capped PbS quantum dots and their application to solar cells

Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) capped PbS quantum dots about 3-6 nm in diameter were synthesized with a novel method. Unlike the synthesis of oleic acid capped PbS quantum dots, the reactions were carried out in solution at room temperature, with the presence of a capping ligand species, MDMO-PPV. The quantum dots were used to fabricate bulk heterojunction solar cells with an indium tin oxide (ITO)/polyethylenedioxythiophene/polystyrenesulphonate (PEDOT: PSS)/MDMO-PPV: PbS/Al structure. Current density-voltage characterization of the devices showed that after the addition of the MDMO-PPV capped PbS quantum dots to MDMO-PPV film, the performance was dramatically improved compared with pristine MDMO-PPV solar cells. (C) 2008 Elsevier Ltd. All rights reserved.

The application of SnS nanoparticles to bulk heterojunction solar cells

Tin mono-sulphide (SnS) nanoparticles were synthesized by a facile method. Reactions producing narrow size distribution SnS nanoparticles with the diameter of 5.0-10 nm were carried out in an ethylene glycol solution at 150 degrees C for 24 h. Bulk heterojunction solar cells with the structure of indium tin oxide (ITO)/polyethylenedioxythiophene polystyrenesulphonate (PEDOT PSS)/SnS polymer/Al were fabricated by blending the nanoparticles with a conjugated polymer to form the active layer for the first time. Current density-voltage characterization of the devices showed that due to the addition of SnS nanoparticles to the polymer film, the device performance can be dramatically improved, compared with that of the pristine polymer solar cells. (c) 2009 Published by Elsevier B.V.

The synthesis of MDMO-PPV capped PbS nanorods and their application in solar cells

Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) capped PbS nanorods about 100 nm in diameter and 400 nm in length were synthesized via a hydrothermal route in toluene and dimethylsulfoxide solution. By blending the PbS nanorods with the MDMO-PPV as the active layer, bulk heterojunction solar cells with an indium tin oxide (ITO)/polyethylenedioxythiophene/polystyrenesulphonate (PEDOT PSS)/MDMO-PPV PbS nanorods/Al structure were fabricated in a N-2 filled glove box, Current density-voltage characterization of the devices showed that the solar cells with PbS nanorods hybrid with MDMO-PPV as active layer were better in performance than the devices with the polymer only. (C) 2009 Elsevier B.V. All rights reserved.